GB2294532A - Diamond lined crucible - Google Patents

Diamond lined crucible Download PDF

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Publication number
GB2294532A
GB2294532A GB9421699A GB9421699A GB2294532A GB 2294532 A GB2294532 A GB 2294532A GB 9421699 A GB9421699 A GB 9421699A GB 9421699 A GB9421699 A GB 9421699A GB 2294532 A GB2294532 A GB 2294532A
Authority
GB
United Kingdom
Prior art keywords
crucible
aluminium
diamond
boron nitride
molecular beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB9421699A
Other versions
GB9421699D0 (en
GB2294532B (en
Inventor
Alistair Henderson Kean
Geoffrey Duggan
Timothy David Bestwick
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to GB9421699A priority Critical patent/GB2294532B/en
Publication of GB9421699D0 publication Critical patent/GB9421699D0/en
Priority to JP27858195A priority patent/JP3907132B2/en
Publication of GB2294532A publication Critical patent/GB2294532A/en
Application granted granted Critical
Publication of GB2294532B publication Critical patent/GB2294532B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
    • C04B41/5001—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials with carbon or carbonisable materials
    • C04B41/5002—Diamond
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/81—Coating or impregnation
    • C04B41/85—Coating or impregnation with inorganic materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/243—Crucibles for source material
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B14/00—Crucible or pot furnaces
    • F27B14/08—Details peculiar to crucible or pot furnaces
    • F27B14/10—Crucibles

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Physical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

A crucible which is particularly but not exclusively designed for the vacuum deposition of aluminium by molecular beam epitaxy comprises a hollow body 10 preferably having an integral supporting flange 12. The body 10 and supporting flange 12 are preferably of pyrolitic boron nitride. The inner surface of the crucible is covered with a diamond coating 14. The thickness of the coating is preferably 10 - 15 mu m. <IMAGE>

Description

CRUCIBLE This invention relates to a crucible for use in the vacuum deposition of high purity materials and is more particularly, though not exclusively, concerned with crucibles for use in molecular beam epitaxy systems.
It is known to use pyrolitic boron nitride (PBN) as a material of construction of crucibles for containing high purity materials which are to be thermally evaporated by molecular beam epitaxy. PBN has a hexagonal laminated structure and is used because it is relatively inert and produces little gas at elevated temperatures. However, if such PBN crucibles are used with aluminium, they ultimately have to be discarded.
This causes a significant "down-time", quite apart from the expense of having to replace the crucible. If PBN crucibles are allowed to cool to an extent that solidification of the aluminium takes place, then damage can take place. If there is sufficient volume of aluminium within the boron nitride crucible, solidification and expansion of the aluminium will cause damage to the crucible by delamination of the PBN. Upon reheating of the crucible, cracks appear allowing the molten aluminium to leak out, damaging the surrounding heater. In order to mitigate this problem, it is known to use an uninterruptable power supply to ensure that, even if there is a power cut, the aluminium will always remain molten in the crucibles. However, the provision of an uninterruptable power supply is expensive, bulky and requires maintenance.
It is an object of the present invention to mitigate the problem of crucible damage without the need to use an uninterruptable power supply.
In accordance with the present invention, there is provided a crucible comprising a hollow body which is lined with a diamond coating.
Whilst the present invention is broadly applicable to crucibles formed of any suitably heat-resistant and stable materials, it is particularly applicable to crucibles formed of boron nitride. Diamond and boron nitride have similar coefficients of thermal expansion. Diamond has the advantage of having a high thermal conductivity as well as being electrically insulating.
The diamond coating typically has a thickness of about 10 - 50 pom.
The body of the crucible may be formed by any convenient technique.
For example, a pyrolitic boron nitride crucible may be formed by chemical vapour deposition onto a graphite former, followed by removal from the former and coating on the inside with diamond.
The diamond coating may be formed by any suitable technique, e.g.
chemical vapour deposition or plasma-assisted deposition.
The crucible according to the present invention is capable of reducing the need to recommission a vacuum deposition system following damage. For vacuum deposition systems such as molecular beam epitaxy systems, repair and recommissioning can take about two weeks.
Also according to the present invention, there is provided apparatus for evaporating or depositing a material (particularly but not exclusively aluminium), wherein the material to be evaporated or deposited is contained in a crucible according to the present invention; and a method of evaporating or depositing a material (particularly but not exclusively aluminium), wherein said material is contained in a crucible according to the present invention.
An embodiment of the present invention will now be described, by way of example, with reference to the accompanying drawing which is a schematic illustration of a crucible according to the present invention.
Referring to the drawing, the crucible is of a size and shape to be used in an effusion cell of a molecular beam epitaxy system. The crucible comprises an open-ended hollow body 10 with integral supporting flange 12. The body 10 and supporting flange 12 are formed, in a manner known per se, of pyrolitic boron nitride by means of a chemical vapour deposition technique onto a graphite former.
In order to prevent contact between the boron nitride and the aluminium in use, the inner surface of the crucible is covered with a diamond coating 14 which has been formed by chemical vapour deposition or plasma-assisted deposition. In this embodiment, the diamond coating 14 has a thickness of about 20 pom.
This crucible can be used in a per se known way in the effusion cell of a molecular beam epitaxy system (not shown). The system can be operated in a known way. However, there is no need to have an uninterruptable power supply, even when the system is used to deposit aluminium. The crucible according to the present invention may be reused after cooling to room temperature, even when it has been used with aluminium as a source material.

Claims (9)

1. A crucible comprising a hollow body which is lined with a diamond coating.
2. A crucible as claimed in claim 1, wherein the body is formed of boron nitride.
3. A crucible as claimed in claim 1 or 2, wherein the diamond coating has a thickness of about 10 - 50 ism.
4. A crucible as claimed in any preceding claim, which is constructed and adapted to be used in an apparatus used to evaporate or deposit aluminium.
5. Apparatus for evaporating or depositing a material, wherein the material to be evaporated or deposited is contained in a crucible as claimed in any one of claims 1 to 4.
6. Apparatus as claimed in claim 5, wherein the material is aluminium.
7. Apparatus as claimed in claim 5 or 6, which is arranged to deposit the material by molecular beam epitaxy.
8. A method of evaporating or depositing a material, wherein said material is contained in a crucible as claimed in one of claims 1 to 4.
9. A method as claimed in claim 8, wherein the material aluminium.
GB9421699A 1994-10-27 1994-10-27 Use of a Crucible Expired - Fee Related GB2294532B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB9421699A GB2294532B (en) 1994-10-27 1994-10-27 Use of a Crucible
JP27858195A JP3907132B2 (en) 1994-10-27 1995-10-26 Evaporation or deposition method using crucible with diamond coating

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB9421699A GB2294532B (en) 1994-10-27 1994-10-27 Use of a Crucible

Publications (3)

Publication Number Publication Date
GB9421699D0 GB9421699D0 (en) 1994-12-14
GB2294532A true GB2294532A (en) 1996-05-01
GB2294532B GB2294532B (en) 1998-12-09

Family

ID=10763514

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9421699A Expired - Fee Related GB2294532B (en) 1994-10-27 1994-10-27 Use of a Crucible

Country Status (2)

Country Link
JP (1) JP3907132B2 (en)
GB (1) GB2294532B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0759416A2 (en) * 1995-08-22 1997-02-26 Shin-Etsu Chemical Co., Ltd. Vessel of pyrolytic boron nitride

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5921955B2 (en) * 2012-05-25 2016-05-24 株式会社半導体エネルギー研究所 Method for producing crucible for vapor deposition

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01249691A (en) * 1988-03-30 1989-10-04 Hitachi Ltd Production of superconducting thin film

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01249691A (en) * 1988-03-30 1989-10-04 Hitachi Ltd Production of superconducting thin film

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
WPI abstract accession number 89-335853 & JP 01 249691 A *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0759416A2 (en) * 1995-08-22 1997-02-26 Shin-Etsu Chemical Co., Ltd. Vessel of pyrolytic boron nitride
EP0759416A3 (en) * 1995-08-22 1997-06-04 Shinetsu Chemical Co Vessel of pyrolytic boron nitride
US5759646A (en) * 1995-08-22 1998-06-02 Shin-Etsu Chemical Co., Ltd. Vessel of pyrolytic boron nitride

Also Published As

Publication number Publication date
JP3907132B2 (en) 2007-04-18
GB9421699D0 (en) 1994-12-14
JPH08225926A (en) 1996-09-03
GB2294532B (en) 1998-12-09

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20081027