GB2281402B - Method for evaluating semiconductor layer - Google Patents
Method for evaluating semiconductor layerInfo
- Publication number
- GB2281402B GB2281402B GB9417460A GB9417460A GB2281402B GB 2281402 B GB2281402 B GB 2281402B GB 9417460 A GB9417460 A GB 9417460A GB 9417460 A GB9417460 A GB 9417460A GB 2281402 B GB2281402 B GB 2281402B
- Authority
- GB
- United Kingdom
- Prior art keywords
- semiconductor layer
- evaluating semiconductor
- evaluating
- layer
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2648—Characterising semiconductor materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
- Hall/Mr Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21545493A JPH0766259A (en) | 1993-08-31 | 1993-08-31 | Semiconductor layer evaluation method |
Publications (3)
Publication Number | Publication Date |
---|---|
GB9417460D0 GB9417460D0 (en) | 1994-10-19 |
GB2281402A GB2281402A (en) | 1995-03-01 |
GB2281402B true GB2281402B (en) | 1997-03-19 |
Family
ID=16672641
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB9417460A Expired - Fee Related GB2281402B (en) | 1993-08-31 | 1994-08-30 | Method for evaluating semiconductor layer |
Country Status (2)
Country | Link |
---|---|
JP (1) | JPH0766259A (en) |
GB (1) | GB2281402B (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10790203B2 (en) | 2016-04-26 | 2020-09-29 | Active Layer Parametrics, Inc. | Methods and systems for material property profiling of thin films |
US11289386B2 (en) | 2016-04-26 | 2022-03-29 | Active Layer Parametrics, Inc. | Methods and apparatus for test pattern forming and film property measurement |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2907059B2 (en) * | 1995-04-27 | 1999-06-21 | 日本電気株式会社 | Impurity diffusion profile measurement method |
US6579730B2 (en) | 2001-07-18 | 2003-06-17 | Applied Materials, Inc. | Monitoring process for oxide removal |
WO2005022135A1 (en) * | 2003-08-27 | 2005-03-10 | Prussin Simon A | In situ determination of resistivity, mobility and dopant concentration profiles |
CN114235899B (en) * | 2021-12-16 | 2023-11-03 | 安徽光智科技有限公司 | Method for detecting carrier concentration of ultra-high purity germanium single crystal |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5150042A (en) * | 1991-09-23 | 1992-09-22 | The United States Of America As Represented By The Secretary Of The Air Force | On-wafer Hall-effect measurement system |
US5217907A (en) * | 1992-01-28 | 1993-06-08 | National Semiconductor Corporation | Array spreading resistance probe (ASRP) method for profile extraction from semiconductor chips of cellular construction |
-
1993
- 1993-08-31 JP JP21545493A patent/JPH0766259A/en active Pending
-
1994
- 1994-08-30 GB GB9417460A patent/GB2281402B/en not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5150042A (en) * | 1991-09-23 | 1992-09-22 | The United States Of America As Represented By The Secretary Of The Air Force | On-wafer Hall-effect measurement system |
US5217907A (en) * | 1992-01-28 | 1993-06-08 | National Semiconductor Corporation | Array spreading resistance probe (ASRP) method for profile extraction from semiconductor chips of cellular construction |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10790203B2 (en) | 2016-04-26 | 2020-09-29 | Active Layer Parametrics, Inc. | Methods and systems for material property profiling of thin films |
US11289386B2 (en) | 2016-04-26 | 2022-03-29 | Active Layer Parametrics, Inc. | Methods and apparatus for test pattern forming and film property measurement |
US11699622B2 (en) | 2016-04-26 | 2023-07-11 | Active Layer Parametrics, Inc. | Methods and apparatus for test pattern forming and film property measurement |
Also Published As
Publication number | Publication date |
---|---|
JPH0766259A (en) | 1995-03-10 |
GB9417460D0 (en) | 1994-10-19 |
GB2281402A (en) | 1995-03-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 20000830 |