GB2277637B - Improved method of forming ohmic contacts - Google Patents

Improved method of forming ohmic contacts

Info

Publication number
GB2277637B
GB2277637B GB9308789A GB9308789A GB2277637B GB 2277637 B GB2277637 B GB 2277637B GB 9308789 A GB9308789 A GB 9308789A GB 9308789 A GB9308789 A GB 9308789A GB 2277637 B GB2277637 B GB 2277637B
Authority
GB
United Kingdom
Prior art keywords
improved method
ohmic contacts
forming ohmic
forming
contacts
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9308789A
Other versions
GB9308789D0 (en
GB2277637A (en
Inventor
Biswajit Gosh
Prasanta Kumar Datta
Robert Hill
Rob Miles
Michael John Carter
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Northumbria University
Original Assignee
Northumbria University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Northumbria University filed Critical Northumbria University
Priority to GB9308789A priority Critical patent/GB2277637B/en
Publication of GB9308789D0 publication Critical patent/GB9308789D0/en
Publication of GB2277637A publication Critical patent/GB2277637A/en
Application granted granted Critical
Publication of GB2277637B publication Critical patent/GB2277637B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
    • H01L21/441—Deposition of conductive or insulating materials for electrodes
    • H01L21/445—Deposition of conductive or insulating materials for electrodes from a liquid, e.g. electrolytic deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/465—Chemical or electrical treatment, e.g. electrolytic etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemically Coating (AREA)
  • Electrodes Of Semiconductors (AREA)
GB9308789A 1993-04-28 1993-04-28 Improved method of forming ohmic contacts Expired - Fee Related GB2277637B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB9308789A GB2277637B (en) 1993-04-28 1993-04-28 Improved method of forming ohmic contacts

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB9308789A GB2277637B (en) 1993-04-28 1993-04-28 Improved method of forming ohmic contacts

Publications (3)

Publication Number Publication Date
GB9308789D0 GB9308789D0 (en) 1993-06-09
GB2277637A GB2277637A (en) 1994-11-02
GB2277637B true GB2277637B (en) 1996-08-28

Family

ID=10734627

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9308789A Expired - Fee Related GB2277637B (en) 1993-04-28 1993-04-28 Improved method of forming ohmic contacts

Country Status (1)

Country Link
GB (1) GB2277637B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6524966B1 (en) * 1997-05-28 2003-02-25 Sandia National Laboratories Surface treatment and protection method for cadmium zinc telluride crystals

Also Published As

Publication number Publication date
GB9308789D0 (en) 1993-06-09
GB2277637A (en) 1994-11-02

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19970428