GB2277637A - Method of forming ohmic contacts to II/VI semiconductor material - Google Patents
Method of forming ohmic contacts to II/VI semiconductor material Download PDFInfo
- Publication number
- GB2277637A GB2277637A GB9308789A GB9308789A GB2277637A GB 2277637 A GB2277637 A GB 2277637A GB 9308789 A GB9308789 A GB 9308789A GB 9308789 A GB9308789 A GB 9308789A GB 2277637 A GB2277637 A GB 2277637A
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- GB
- United Kingdom
- Prior art keywords
- metal
- group
- semiconductor material
- compound
- etched surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 29
- 239000000463 material Substances 0.000 title claims abstract description 25
- 239000004065 semiconductor Substances 0.000 title claims abstract description 20
- 150000001875 compounds Chemical class 0.000 claims abstract description 22
- 229910052751 metal Inorganic materials 0.000 claims abstract description 20
- 239000002184 metal Substances 0.000 claims abstract description 19
- 238000000151 deposition Methods 0.000 claims abstract description 16
- 230000008021 deposition Effects 0.000 claims abstract description 12
- 238000007747 plating Methods 0.000 claims abstract description 12
- 238000005530 etching Methods 0.000 claims abstract description 10
- 229910052755 nonmetal Inorganic materials 0.000 claims abstract description 8
- 238000011282 treatment Methods 0.000 claims description 11
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Natural products CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 8
- 239000000243 solution Substances 0.000 claims description 7
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 6
- -1 bismith Chemical compound 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- 229910052698 phosphorus Inorganic materials 0.000 claims description 5
- 239000011574 phosphorus Substances 0.000 claims description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- 239000008139 complexing agent Substances 0.000 claims description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- 239000002253 acid Substances 0.000 claims description 3
- 239000012670 alkaline solution Substances 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229940074404 sodium succinate Drugs 0.000 claims description 3
- ZDQYSKICYIVCPN-UHFFFAOYSA-L sodium succinate (anhydrous) Chemical group [Na+].[Na+].[O-]C(=O)CCC([O-])=O ZDQYSKICYIVCPN-UHFFFAOYSA-L 0.000 claims description 3
- 229910052714 tellurium Inorganic materials 0.000 claims description 3
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical group [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 3
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 2
- 239000005864 Sulphur Substances 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 2
- 229910052787 antimony Inorganic materials 0.000 claims description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 2
- 239000007864 aqueous solution Substances 0.000 claims description 2
- 229910052785 arsenic Inorganic materials 0.000 claims description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052794 bromium Inorganic materials 0.000 claims description 2
- 229910052793 cadmium Inorganic materials 0.000 claims description 2
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 claims description 2
- 229910052753 mercury Inorganic materials 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 150000007524 organic acids Chemical group 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 229910052699 polonium Inorganic materials 0.000 claims description 2
- HZEBHPIOVYHPMT-UHFFFAOYSA-N polonium atom Chemical compound [Po] HZEBHPIOVYHPMT-UHFFFAOYSA-N 0.000 claims description 2
- 239000012266 salt solution Substances 0.000 claims description 2
- 229910052711 selenium Inorganic materials 0.000 claims description 2
- 239000011669 selenium Substances 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- FQENQNTWSFEDLI-UHFFFAOYSA-J sodium diphosphate Chemical compound [Na+].[Na+].[Na+].[Na+].[O-]P([O-])(=O)OP([O-])([O-])=O FQENQNTWSFEDLI-UHFFFAOYSA-J 0.000 claims description 2
- 229940048086 sodium pyrophosphate Drugs 0.000 claims description 2
- 235000019818 tetrasodium diphosphate Nutrition 0.000 claims description 2
- 239000001577 tetrasodium phosphonato phosphate Substances 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 239000011701 zinc Substances 0.000 claims description 2
- 125000000218 acetic acid group Chemical group C(C)(=O)* 0.000 claims 1
- 150000007522 mineralic acids Chemical class 0.000 claims 1
- 239000010410 layer Substances 0.000 description 6
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 150000002815 nickel Chemical class 0.000 description 3
- 150000003839 salts Chemical class 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- KWSLGOVYXMQPPX-UHFFFAOYSA-N 5-[3-(trifluoromethyl)phenyl]-2h-tetrazole Chemical compound FC(F)(F)C1=CC=CC(C2=NNN=N2)=C1 KWSLGOVYXMQPPX-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 206010070834 Sensitisation Diseases 0.000 description 2
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 description 2
- 229910001379 sodium hypophosphite Inorganic materials 0.000 description 2
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- QRJOYPHTNNOAOJ-UHFFFAOYSA-N copper gold Chemical compound [Cu].[Au] QRJOYPHTNNOAOJ-UHFFFAOYSA-N 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000003353 gold alloy Substances 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910000000 metal hydroxide Inorganic materials 0.000 description 1
- 150000004692 metal hydroxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 150000002940 palladium Chemical class 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- KMUONIBRACKNSN-UHFFFAOYSA-N potassium dichromate Chemical compound [K+].[K+].[O-][Cr](=O)(=O)O[Cr]([O-])(=O)=O KMUONIBRACKNSN-UHFFFAOYSA-N 0.000 description 1
- 229910001961 silver nitrate Inorganic materials 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000001117 sulphuric acid Substances 0.000 description 1
- 235000011149 sulphuric acid Nutrition 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
- H01L21/441—Deposition of conductive or insulating materials for electrodes
- H01L21/445—Deposition of conductive or insulating materials for electrodes from a liquid, e.g. electrolytic deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/465—Chemical or electrical treatment, e.g. electrolytic etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemically Coating (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
A method of forming an ohmic contact to a p-type semiconductor material formed of a compound of a Group IIB metal with a non-metallic or semimetallic element from Group VIA entails etching a surface of the material and then depositing upon the etched surface, by electroless deposition, a compound of a plating metal with a non-metal from Group V.
Description
Improved Method of Forming Ohmic Contacts.
The present invention is concerned with the provision of ohmic contacts to p-type semiconductor materials formed of Group IIB-VIA compounds.
Compounds of metal elements from Group IIB of the periodic table with non-metallic or semimetallic elements from Group VIA are well known semiconductor materials, which may be used in single crystalline form or as polycrystalline thin films in a range of different applications.
Such materials are used in the fields of optoelectronic and magneto-optic devices and have considerable potential for use in devices for the conversion of solar energy. A typical such compound is cadmium telluride.
It is well known that it is difficult to form a good ohmic contact to p-type semiconductor compounds of the foregoing type and of course this difficulty inhibits the full use of such compounds in the wide variety of applications for which they are potentially suitable. For this reason, methods have been developed specifically for the purpose of providing reasonable ohmic contacts. Such methods comprise etching the surface of the compound and then depositing a metal, for example copper, gold or a copper-gold alloy, on the etched surface. It is believed that a thin surface layer is thus formed of a compound of the Group VIA element with the deposited metal. Unfortunately it has been found that the latter compound, for example of copper and tellurium, degrades with time and is therefore unsuitable for establishing good ohmic contacts.
It is an object of the present invention to provide an improved method of forming ohmic contacts to semiconductor materials of the foregoing type.
The method according to the present invention for forming an ohmic contact to a ptype semiconductor material formed of a compound of a Croup IIB metal with a non-metallic or semimetallic element from Group VIA comprises etching a surface of said material and then depositing upon the etched surface, by electroless deposition, a compound of a plating metal with a non-metal from Group V.
The method of the present invention is suitable for application to all p-type semiconductor materials formed from such Group
IIB/VIA compounds. Thus the Group IIB metal may be cadmium, zinc or mercury, while the Group VIA element may be tellurium, oxygen, sulphur, selenium or polonium. A preferred compound is cadmium telluride. The material may be in single crystalline form or as a polycrystalline thin film.
The first step in forming a good ohmic contact to the semiconductor material is to etch the surface of the material using a suitable etchant. The purpose of the etching treatment is to prepare the surface for the subsequent deposition treatment and it is believed that the etching removes an oxide layer which otherwise would impede the formation of a good ohmic contact. A range of etchants may be used for this purpose. Such etchants include aqueous solutions containing acids, such as nitric acid, sulphuric acid and hydrogen fluoride, usually in combination with other compounds such as potassium bichromate, silver nitrate and hydrogen peroxide, and a solution of bromine in methanol.
The preferred etchants are organic acids, in particular acetic acid.
Following the etching of the surface of the semiconductor material, an electroless deposition is carried out, by means of which a compound of a plating metal with a Group V non-metal is deposited upon the etched surface. The deposition is conveniently effected by immersing the etched surface in a plating bath containing compounds of the chosen metal and non-metal.
Suitable plating metals include nickel, platinum, palladium, silver, gold, copper and titanium.
The Group V non-metal may be phosphorus, arsenic, bismuth, nitrogen or antimony. Thus, by way of example, a nickel-phosphorus compound may be deposited from a bath containing a nickel salt and a phosphorus compound.
The plating bath by which the electroless deposition is effected may further contain a complexing agent. Thus, in the foregoing example, it may contain a nickel salt, a phosphorus compound such as sodium hypophosphite, which acts as a reducing agent, and a complexing agent, for example sodium succinate or sodium pyrophosphate.
The method according to the invention may be further improved by carrying out additional treatment steps between the etching and deposition treatments, to further prepare the surface to receive the deposited compound. Thus an acid-based etching may be followed by treatment with an alkaline solution, for example of hydrazine or a metal hydroxide, and with treatments to sensitise and/or activate the semiconductor surface. For example, sensitisation may be effected by treatment with a first metal salt solution, for example of a stannous salt, and the treated surface may then be activated by treatment with a solution of a salt of a second metal, for example palladium or platinum.
By means of the process according to the present invention the resistivity of the semiconductor material may be significantly reduced and good ohmic contact established.
The invention will now be further described by means of the following illustrative example of one preferrred form of the improved method according to the present invention.
Example.
The semiconductor material was in the form of a thin film of p-type cadmium telluride supported through one or more intermediate layers upon glass. The semiconductor material was first etched by treatment with acetic acid and the treated surface then further treated with hydrazine solution. The next step comprised sensitisation of the treated surface with a solution of a stannous salt, the surface subsequently being activated with a solution of a palladium salt. By these successive treatments, the surface was prepared to receive the conducting layer by means of which the ohmic contact was to be established.
The conducting layer was formed by immersing the treated semiconductor material in a plating solution containing a nickel salt, sodium hypophosphite and sodium succinate. In this way a layer of nickel-phosphorus compound was deposited upon the surface.
Comparative measurements, whereby the contact resistance of the resulting semiconductor film was compared with that of a comparable ptype cadmium telluride film which had been coated by deposition of copper followed by painting with mercury-doped carbon paste, showed that the contact resistance of the former film was significantly less than that of the latter film.
A further advantage of the method according to the present invention is that, because the deposited layer contains a dopant, for example phosphorus, the latter material is able to diffuse into the semiconductor material during any subsequent annealing or sintering process, thereby reducing the resistivity of that material.
Claims (14)
1. A method of forming an ohmic contact to a ptype semiconductor material formed of a compound of a Group IIB metal with a non-metallic or semimetallic element from Group VIA, which method comprises etching a surface of said material and then depositing upon the etched surface, by electroless deposition, a compound of a plating metal with a non-metal from Group V.
2. A method as claimed in Claim 1, wherein the
Group IIB metal is cadmium, zinc or mercury.
3. A method as claimed in either of the preceding claims, wherein the Group VIA element is tellurium, oxygen, sulphur, selenium or polonium.
4. A method as claimed in Claim 3, wherein the semiconductor material is cadmium telluride.
5. A method as claimed in any of the preceding claims, wherein the etchant is an organic acid, an aqueous solution of an inorganic acid, or a solution of bromine in methanol.
6. A method as claimed in Claim 5, wherein the etchant is acetic acid.
7. A method as claimed in any of the preceding claims, wherein the electroless deposition is effected by immersing the etched surface in a plating bath containing compounds of the plating metal and of the Group V non-metal.
8. A method as claimed in Claim 7, wherein the plating bath contains a complexing agent.
9. A method as claimed in Claim 8, wherein the complexing agent is sodium succinate or sodium pyrophosphate.
10. A method as claimed in any of the preceding claims, wherein the plating metal is nickel, platinum, palladium, silver, gold, copper or titanium.
11. A method as claimed in any of the preceding claims, wherein the Group V non-metal is phosphorus, arsenic, bismith, nitrogen or antimony.
12. A method as claimed in any of the preceding claims, wherein, after said etching using an acid etchant, the etched surface is treated with an alkaline solution before the electroless deposition.
13. A method as claimed in Claim 12, wherein, after said treatment with an alkaline solution and before the electroless deposition, the etched surface is treated with a metal salt solution to sensitise and/or activate the etched surface.
14. A method of forming an ohmic contact to a ptype semiconductor material formed of a compound of a Group IIB metal with a non-metallic or semimetallic element from Group VIA, said method being substantially as hereinbefore described in the Example.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB9308789A GB2277637B (en) | 1993-04-28 | 1993-04-28 | Improved method of forming ohmic contacts |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB9308789A GB2277637B (en) | 1993-04-28 | 1993-04-28 | Improved method of forming ohmic contacts |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| GB9308789D0 GB9308789D0 (en) | 1993-06-09 |
| GB2277637A true GB2277637A (en) | 1994-11-02 |
| GB2277637B GB2277637B (en) | 1996-08-28 |
Family
ID=10734627
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB9308789A Expired - Fee Related GB2277637B (en) | 1993-04-28 | 1993-04-28 | Improved method of forming ohmic contacts |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB2277637B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6524966B1 (en) * | 1997-05-28 | 2003-02-25 | Sandia National Laboratories | Surface treatment and protection method for cadmium zinc telluride crystals |
-
1993
- 1993-04-28 GB GB9308789A patent/GB2277637B/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6524966B1 (en) * | 1997-05-28 | 2003-02-25 | Sandia National Laboratories | Surface treatment and protection method for cadmium zinc telluride crystals |
Also Published As
| Publication number | Publication date |
|---|---|
| GB2277637B (en) | 1996-08-28 |
| GB9308789D0 (en) | 1993-06-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 19970428 |