GB2276288A - Stabilisation circuit for microwave amplifiers and active networks using butterfly stub - Google Patents
Stabilisation circuit for microwave amplifiers and active networks using butterfly stub Download PDFInfo
- Publication number
- GB2276288A GB2276288A GB9305343A GB9305343A GB2276288A GB 2276288 A GB2276288 A GB 2276288A GB 9305343 A GB9305343 A GB 9305343A GB 9305343 A GB9305343 A GB 9305343A GB 2276288 A GB2276288 A GB 2276288A
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- GB
- United Kingdom
- Prior art keywords
- stabilisation
- network
- circuit
- microwave
- stability
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
- H03F3/601—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators using FET's, e.g. GaAs FET's
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
- H03F1/083—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements in transistor amplifiers
- H03F1/086—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements in transistor amplifiers with FET's
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/372—Noise reduction and elimination in amplifier
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
The invention describes a microwave stabilisation network which demonstrates a solution to instability and conditional stability problems associated with high frequency solid state devices for microwave circuits. The circuit can be constructed as a stand alone stabilisation network or can be arranged to form part of a dc biasing network. It comprises a transmission line of around a quarter wavelength leading to a butterfly stub. The arrangement includes a set of stabilisation resistors configured to ensure stability across the entire frequency spectrum. <IMAGE>
Description
STABILISATION CIRCUIT FOR
MICROWAVE AMPLIFIERS AND NETWORKS
CONTENTS
ABBREVIATIONS 1.0 ABSTRACT 2.0 BACKGROUND OF THE INVENTION 3.0 DESCRIPTION OF THE INVENTION
3.1 Theoretical Description
3.2 Qualitative Description of the Circuit Function 4.0 TECHNICAL RESULTS
4.1 Application Notes
4.2 Typical Measured Performance 5.0 CLAIMS
ABBREVIATIONS dc direct current rf : radio frequency
HEMT High Electron Mobility Transistor
HBT : Heterojunction Bipolar Transistor
MESFET Metal Semiconductor Field Effective Transistor
LNA : Low Noise Amplifier
SSPA Solid State Power Amplifier 2.0 BACKGROUND OF THE INVENTION
Solid state microwave amplifiers are widely used in most communication networks.The components used to realise these networks are largely based on two-port solid state microwave components which could have drastic affects on equipment performance if a failure such as instability occurs. It is of extreme importance to avoid any instability behaviour, as the effects of it would result in equipment failure and could result in destruction or degradation of other functional equipment.
The conventional solution to the problem has been to design impedance matching networks which ensure unconditional stability at and around the operation bandwidth and to use nag/4 long bias lines with short circuit reference points, where n is an odd integer number. In addition to these, where instability is restricted to narrow bands, shunt resonance circuits are used. The commonly used features of the nag/4 bias lines include stabilisation resistors and rf decoupling capacitors. The non-ideal characteristics of the circuit elements and narrow band characteristics of keg/4 often leads to in-band performance degradation. These commonly used design techniques will often only yield conditional stability.Where high frequency devices such as HEMTs, HBTs and small gate periphery, high frequency MESFETs are used at lower bands, such as L- and Cbands, the achievement of good stability margins or unconditional stability conditions is much more difficult. The problem is often solved using two separate networks; the rf matching network which defines the in-band characteristics and the stabilisation network which can be designed to effect out-of-band characteristics. The invention presented describes a stabilisation circuit which provides an effective tool for ensuring unconditional stability, shaping the out-of-band characteristics without degrading in-band performance.
3.0 DESCRIPTION OF THE INVENTION
The circuit performs the function of stabilisation by effecting the out-of
band characteristics of a network in a predetermined manner. The
performance can be optimised using CAD techniques. The circuit provides
a design tool which can be built in microwave and higher frequency circuits
to achieve unconditional stability characteristics.
3.1 Oualitative Description of the Circuit Function
The schematic diagram of the circuit is shown in Figure 1. The
construction is based on the open circuit characteristics defined by the
butterfly-stub, element number (4), which connects to the main
transmission line via the resistor labelled number (3) and a bias
transmission line, labelled number (2). The butterfly-stub serves the prime
function of defining a virtual open circuit over 5% bandwidth about a
centre frequency fO. The total electrical length from the T-junction to the
open circuit reference point of the butterfly-stub IT is half a wavelength at f0,i .e. 1800.
IT = lel + 1,2 + 81 = 1800
where: l,j is the effective electrical length of the butterfly-stub
1,2 is the effective electrical length of the transmission line labelled
(2) in figure 1.
81 is the added electrical length of the stabilisation resistor labelled
(3).
An important feature of the network concerns the two stabilisation resistors
(3) and (5), used on either side of the butterfly-stub. As a result of this
arrangement any in-band signal sees more of (3) and virtually none of (5),
and any out-of-band signal over selected frequency bands sees both of the
resistors and is hence significantly attenuated which reduces the magnitudes
of S21 and S12. The elements labelled (2), (3), (4) and (5) can be carefully
chosen to attenuate selected out-of-band frequencies with very little or no
in-band insertion loss increase. Depending on circuit performance
requirements, a small degradation of in-band insertion loss can be traded
off for improved stability performance.The circuit offers a versatile
stabilisation network with two separate stabilisation resistors; one for in
band effects and the other for out-of-band effects. Where the in-band
stability is very good and further improvement is not needed, the first
resistor (element number (3)) can be shorted. These features are of
extreme importance in LNA and SSPA designs. In the case of the former
the input circuit is mismatched to optimise NF performance. This often
results in a need for a small improvement in the K-factor across the
operation band and a substantial improvement in the out-of-band K-factor.
Where high gain, high frequency, low noise devices are used, the
instability problem becomes more difficult to solve and the described
design network could provide the ultimate solution. The preferred dc bias
line in LNA applications would be via a high impedance line, labelled (7).
In the latter case, i.e. in SSPAs, it is more suitable to integrate this circuit
to its output network, and to apply dc bias via the high impedance line,
labelled (8). Where efficiency of the unit is very critical the bias point can
be arranged to connect at the junction between the butterfly-stub, element
(5) and the low value stabilisation resistor, element (3).
3.2 Theoretical Description
The theory of unconditional stability is defined by Rollett Stability Factor, K [1] K = 1 +lDI-2- IS11i2 152212 21S12.S211 The condition for unconditional stability is:
K > 1 S11 < I S22 < 1
where Sij defines scattering parameters of a two port network, i = I,2andj = 1,2 D = Sll.S22-S12.S21 4.0 TECHNICAL RESULTS
To assess the effectiveness of the presented circuit a C-band LNA was
designed and built. The described effects of the stabilisation network were
analysed using CAD techniques and the practical performance was tested.
Computer analysis of the modelled network was observed to be in good
agreement with the measured data.
4.1 Application Notes
The presented invention has a wide range of applications in various
microwave and higher frequency active networks. The prime application
area encompasses different amplifier types ranging from LNAs to SSPAs.
Some of the other applications may extend into transistor based switching
networks. Different configuration of the circuit are shown in Figure 2.
The dc block shown in Figure 2a can be used in fast switching networks to
eliminate or alleviate time constraints introduced by decoupling capacitors.
An application example of the circuit used in a LNA stage is shown in
Figure 3.
4.2 Typical Measured Performance
VSWR and insertion loss characteristics of the stabilisation circuit is shown
in Figure 4. The simulated and measured characteristics of the LNA are
shown in figure 5 which demonstrates the effectiveness of the stabilisation
network in circuit applications.
[1] S.Y. Lioa, "Microwave Circuit Analysis and Amplifier Design", Prentice
Hall, Inc., 1987, pp. 96-101 [2] F. Giannini, R. Sorrention, J. Vrba, "Planar Circuit Analysis of
Microstrip Radial Stub", IEEE Trans. on Microwave Theory and Tech.,
Vol. MTT-32, No. 12 Dec. 1984, pp. 1652 - 1654 [3] F. Giannini, M. Ruggieri, J. Vrba, "Shunt-Connection Microstrip Radial
Stubs", IEEE Trans. on Microwave Theory and Tech., Vol. MTT-34,
No. 3, March 1986, pp. 363 - 366.
Claims (1)
- 5.0 CLAIMS5.1 A Microwave stabilisation network comprising a transmission line of typically a quarter wavelength leading to a butterfly stub with a set of stabilisation resistors used to improve circuit stability or to ensure unconditional stability.5.2 A stabilisation network as in Claim 1 but used in conjunction with high impedance lines and/or lump elements to provide a dc bias network as well as providing improved stability.5.3 A stabilisation network as in Claim 1 or Claim 2 used in non-linear networks to provide improved stability over the operating dynamic range and environmental conditions.5.4 As in Claim 1 or Claim 2 with dc de-coupling and rf coupling to provide stabilisation and/or biasing to dc or pulsed controlled switching networks.5.5 As in Claim 1 or Claim 2 but used as a spurii suppression network.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB9305343A GB2276288A (en) | 1993-03-16 | 1993-03-16 | Stabilisation circuit for microwave amplifiers and active networks using butterfly stub |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB9305343A GB2276288A (en) | 1993-03-16 | 1993-03-16 | Stabilisation circuit for microwave amplifiers and active networks using butterfly stub |
Publications (2)
Publication Number | Publication Date |
---|---|
GB9305343D0 GB9305343D0 (en) | 1993-05-05 |
GB2276288A true GB2276288A (en) | 1994-09-21 |
Family
ID=10732112
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB9305343A Withdrawn GB2276288A (en) | 1993-03-16 | 1993-03-16 | Stabilisation circuit for microwave amplifiers and active networks using butterfly stub |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB2276288A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6893101B2 (en) | 2001-07-27 | 2005-05-17 | Telefonaktiebolaget L.M. Ericsson | Active element bias circuit for RF power transistor input |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5177452A (en) * | 1989-12-25 | 1993-01-05 | Nec Corporation | Stabilized circuit of high output power transistor for microwave and milliwave |
-
1993
- 1993-03-16 GB GB9305343A patent/GB2276288A/en not_active Withdrawn
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5177452A (en) * | 1989-12-25 | 1993-01-05 | Nec Corporation | Stabilized circuit of high output power transistor for microwave and milliwave |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6893101B2 (en) | 2001-07-27 | 2005-05-17 | Telefonaktiebolaget L.M. Ericsson | Active element bias circuit for RF power transistor input |
Also Published As
Publication number | Publication date |
---|---|
GB9305343D0 (en) | 1993-05-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |