GB2262385B - Velocity modulation transistor - Google Patents

Velocity modulation transistor

Info

Publication number
GB2262385B
GB2262385B GB9225785A GB9225785A GB2262385B GB 2262385 B GB2262385 B GB 2262385B GB 9225785 A GB9225785 A GB 9225785A GB 9225785 A GB9225785 A GB 9225785A GB 2262385 B GB2262385 B GB 2262385B
Authority
GB
United Kingdom
Prior art keywords
velocity modulation
modulation transistor
transistor
velocity
modulation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9225785A
Other versions
GB2262385A (en
GB9225785D0 (en
Inventor
Atsushi Kurobe
Michael Pepper
Jeremy Burroughes
Jonathan E F Frost
Paul Michael Owen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Europe Ltd
Original Assignee
Toshiba Cambridge Research Centre Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Cambridge Research Centre Ltd filed Critical Toshiba Cambridge Research Centre Ltd
Publication of GB9225785D0 publication Critical patent/GB9225785D0/en
Publication of GB2262385A publication Critical patent/GB2262385A/en
Application granted granted Critical
Publication of GB2262385B publication Critical patent/GB2262385B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
    • H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/7727—Velocity modulation transistors, i.e. VMT

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
GB9225785A 1991-12-13 1992-12-10 Velocity modulation transistor Expired - Fee Related GB2262385B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB919126480A GB9126480D0 (en) 1991-12-13 1991-12-13 Velocity modulation transistor

Publications (3)

Publication Number Publication Date
GB9225785D0 GB9225785D0 (en) 1993-02-03
GB2262385A GB2262385A (en) 1993-06-16
GB2262385B true GB2262385B (en) 1995-07-19

Family

ID=10706200

Family Applications (2)

Application Number Title Priority Date Filing Date
GB919126480A Pending GB9126480D0 (en) 1991-12-13 1991-12-13 Velocity modulation transistor
GB9225785A Expired - Fee Related GB2262385B (en) 1991-12-13 1992-12-10 Velocity modulation transistor

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GB919126480A Pending GB9126480D0 (en) 1991-12-13 1991-12-13 Velocity modulation transistor

Country Status (2)

Country Link
JP (1) JPH05251477A (en)
GB (2) GB9126480D0 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2316533B (en) * 1996-08-16 1999-05-26 Toshiba Cambridge Res Center Semiconductor device
KR20120004409A (en) 2009-04-06 2012-01-12 스미또모 가가꾸 가부시키가이샤 Semiconductor substrate, method for manufacturing semiconductor substrate, method for evaluating semiconductor substrate, and electronic device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2171250A (en) * 1985-01-30 1986-08-20 Sony Corp Heterojunction field effect transistors
EP0255416A1 (en) * 1986-06-30 1988-02-03 Thomson-Csf Double channel heterojunction semiconductor device, its use in a field effect transistor, and its use in a negative transductance device
EP0323220A2 (en) * 1987-12-25 1989-07-05 Mitsubishi Kasei Corporation Hetero junction field effect transistor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2171250A (en) * 1985-01-30 1986-08-20 Sony Corp Heterojunction field effect transistors
EP0255416A1 (en) * 1986-06-30 1988-02-03 Thomson-Csf Double channel heterojunction semiconductor device, its use in a field effect transistor, and its use in a negative transductance device
EP0323220A2 (en) * 1987-12-25 1989-07-05 Mitsubishi Kasei Corporation Hetero junction field effect transistor device

Also Published As

Publication number Publication date
GB9126480D0 (en) 1992-02-12
GB2262385A (en) 1993-06-16
GB9225785D0 (en) 1993-02-03
JPH05251477A (en) 1993-09-28

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20101210