GB2261677B - Method and cell for etching semiconductors - Google Patents
Method and cell for etching semiconductorsInfo
- Publication number
- GB2261677B GB2261677B GB9124867A GB9124867A GB2261677B GB 2261677 B GB2261677 B GB 2261677B GB 9124867 A GB9124867 A GB 9124867A GB 9124867 A GB9124867 A GB 9124867A GB 2261677 B GB2261677 B GB 2261677B
- Authority
- GB
- United Kingdom
- Prior art keywords
- cell
- etching semiconductors
- semiconductors
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000005530 etching Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F3/00—Electrolytic etching or polishing
- C25F3/02—Etching
- C25F3/12—Etching of semiconducting materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/465—Chemical or electrical treatment, e.g. electrolytic etching
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB9124867A GB2261677B (en) | 1991-11-22 | 1991-11-22 | Method and cell for etching semiconductors |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB9124867A GB2261677B (en) | 1991-11-22 | 1991-11-22 | Method and cell for etching semiconductors |
Publications (3)
Publication Number | Publication Date |
---|---|
GB9124867D0 GB9124867D0 (en) | 1992-01-15 |
GB2261677A GB2261677A (en) | 1993-05-26 |
GB2261677B true GB2261677B (en) | 1996-03-27 |
Family
ID=10705086
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB9124867A Expired - Fee Related GB2261677B (en) | 1991-11-22 | 1991-11-22 | Method and cell for etching semiconductors |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB2261677B (en) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1571492A (en) * | 1977-03-04 | 1980-07-16 | Secr Defence | Fabrication of solid state devices |
US4248683A (en) * | 1980-04-22 | 1981-02-03 | The United States Of America As Represented By The Secretary Of The Navy | Localized anodic thinning |
US4441967A (en) * | 1982-12-23 | 1984-04-10 | The United States Of America As Represented By The Secretary Of The Army | Method of passivating mercury cadmium telluride using modulated DC anodization |
US4462871A (en) * | 1982-04-06 | 1984-07-31 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Epitaxial thinning process |
EP0504956A2 (en) * | 1991-03-15 | 1992-09-23 | General Motors Corporation | Selective electrochemical etching |
-
1991
- 1991-11-22 GB GB9124867A patent/GB2261677B/en not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1571492A (en) * | 1977-03-04 | 1980-07-16 | Secr Defence | Fabrication of solid state devices |
US4248683A (en) * | 1980-04-22 | 1981-02-03 | The United States Of America As Represented By The Secretary Of The Navy | Localized anodic thinning |
US4462871A (en) * | 1982-04-06 | 1984-07-31 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Epitaxial thinning process |
US4441967A (en) * | 1982-12-23 | 1984-04-10 | The United States Of America As Represented By The Secretary Of The Army | Method of passivating mercury cadmium telluride using modulated DC anodization |
EP0504956A2 (en) * | 1991-03-15 | 1992-09-23 | General Motors Corporation | Selective electrochemical etching |
Also Published As
Publication number | Publication date |
---|---|
GB9124867D0 (en) | 1992-01-15 |
GB2261677A (en) | 1993-05-26 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 19991122 |