GB2246662B - A photodetector device - Google Patents

A photodetector device

Info

Publication number
GB2246662B
GB2246662B GB9026969A GB9026969A GB2246662B GB 2246662 B GB2246662 B GB 2246662B GB 9026969 A GB9026969 A GB 9026969A GB 9026969 A GB9026969 A GB 9026969A GB 2246662 B GB2246662 B GB 2246662B
Authority
GB
United Kingdom
Prior art keywords
photodetector device
photodetector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9026969A
Other versions
GB2246662A (en
GB9026969D0 (en
Inventor
Yasuaki Yoshida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of GB9026969D0 publication Critical patent/GB9026969D0/en
Publication of GB2246662A publication Critical patent/GB2246662A/en
Application granted granted Critical
Publication of GB2246662B publication Critical patent/GB2246662B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14634—Assemblies, i.e. Hybrid structures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2632—Circuits therefor for testing diodes
    • G01R31/2635—Testing light-emitting diodes, laser diodes or photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14649—Infrared imagers
    • H01L27/1465—Infrared imagers of the hybrid type
GB9026969A 1990-07-30 1990-12-12 A photodetector device Expired - Fee Related GB2246662B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2201768A JPH0485961A (en) 1990-07-30 1990-07-30 Optical sensor

Publications (3)

Publication Number Publication Date
GB9026969D0 GB9026969D0 (en) 1991-01-30
GB2246662A GB2246662A (en) 1992-02-05
GB2246662B true GB2246662B (en) 1994-08-24

Family

ID=16446622

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9026969A Expired - Fee Related GB2246662B (en) 1990-07-30 1990-12-12 A photodetector device

Country Status (3)

Country Link
JP (1) JPH0485961A (en)
FR (1) FR2665302B1 (en)
GB (1) GB2246662B (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2263980B (en) * 1992-02-07 1996-04-10 Marconi Gec Ltd Apparatus and method for testing bare dies
JPH06232234A (en) * 1993-01-29 1994-08-19 Mitsubishi Electric Corp Optical detection element
US5596222A (en) * 1994-08-12 1997-01-21 The Charles Stark Draper Laboratory, Inc. Wafer of transducer chips
US5756395A (en) * 1995-08-18 1998-05-26 Lsi Logic Corporation Process for forming metal interconnect structures for use with integrated circuit devices to form integrated circuit structures
GB2340997A (en) * 1998-08-26 2000-03-01 Lsi Logic Corp Optoelectronic integrated circuit and method of testing
WO2003017372A1 (en) * 2001-08-14 2003-02-27 Infineon Technologies Ag Photodiode arrangement with two photodiodes
US20030049925A1 (en) 2001-09-10 2003-03-13 Layman Paul Arthur High-density inter-die interconnect structure
JP2007258199A (en) * 2006-03-20 2007-10-04 Nec Electronics Corp Imaging element
WO2008142968A1 (en) * 2007-05-21 2008-11-27 Shimadzu Corporation Imaging element and imaging device provided with the same
KR101004024B1 (en) * 2009-12-29 2010-12-31 한국지질자원연구원 Non contact rock fall detection method using photo sensors
WO2019160517A2 (en) * 2018-02-15 2019-08-22 Aselsan Elektroni̇k Sanayi̇ Ve Ti̇caret Anoni̇m Şi̇rketi̇ A method for improving the flip-chip bonding process
US10727267B2 (en) * 2018-09-12 2020-07-28 Sensors Unlimited, Inc. Interconnect bump structures for photo detectors
JP2020098901A (en) * 2018-12-14 2020-06-25 キヤノン株式会社 Photoelectric conversion device, photoelectric conversion device manufacturing method, semiconductor device manufacturing method

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4709141A (en) * 1986-01-09 1987-11-24 Rockwell International Corporation Non-destructive testing of cooled detector arrays
EP0271522A1 (en) * 1986-06-26 1988-06-22 Santa Barbara Research Center Backside contact blocked impurity band detector
US4943491A (en) * 1989-11-20 1990-07-24 Honeywell Inc. Structure for improving interconnect reliability of focal plane arrays

Also Published As

Publication number Publication date
GB2246662A (en) 1992-02-05
FR2665302A1 (en) 1992-01-31
JPH0485961A (en) 1992-03-18
FR2665302B1 (en) 1994-01-28
GB9026969D0 (en) 1991-01-30

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Legal Events

Date Code Title Description
746 Register noted 'licences of right' (sect. 46/1977)

Effective date: 19951107

PCNP Patent ceased through non-payment of renewal fee

Effective date: 19991212