GB2243032A - Hybrid type device and manufacturing method thereof - Google Patents

Hybrid type device and manufacturing method thereof Download PDF

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Publication number
GB2243032A
GB2243032A GB9103393A GB9103393A GB2243032A GB 2243032 A GB2243032 A GB 2243032A GB 9103393 A GB9103393 A GB 9103393A GB 9103393 A GB9103393 A GB 9103393A GB 2243032 A GB2243032 A GB 2243032A
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United Kingdom
Prior art keywords
hybrid
type device
plane substrate
function elements
thermoplastic resin
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Granted
Application number
GB9103393A
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GB2243032B (en
GB9103393D0 (en
Inventor
Yoshiharu Komine
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Publication of GB9103393D0 publication Critical patent/GB9103393D0/en
Publication of GB2243032A publication Critical patent/GB2243032A/en
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Publication of GB2243032B publication Critical patent/GB2243032B/en
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/5328—Conductive materials containing conductive organic materials or pastes, e.g. conductive adhesives, inks
    • H—ELECTRICITY
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14649—Infrared imagers
    • H01L27/1465—Infrared imagers of the hybrid type
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14665—Imagers using a photoconductor layer
    • H01L27/14669—Infrared imagers
    • H01L27/1467—Infrared imagers of the hybrid type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14875—Infrared CCD or CID imagers
    • H01L27/14881—Infrared CCD or CID imagers of the hybrid type
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/321—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
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    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01046—Palladium [Pd]
    • H—ELECTRICITY
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01049—Indium [In]
    • H—ELECTRICITY
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    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
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    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12043—Photo diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/11—Printed elements for providing electric connections to or between printed circuits
    • H05K1/111—Pads for surface mounting, e.g. lay-out
    • H05K1/112—Pads for surface mounting, e.g. lay-out directly combined with via connections
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/01—Dielectrics
    • H05K2201/0104—Properties and characteristics in general
    • H05K2201/0129—Thermoplastic polymer, e.g. auto-adhesive layer; Shaping of thermoplastic polymer
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09—Shape and layout
    • H05K2201/09209—Shape and layout details of conductors
    • H05K2201/09372—Pads and lands
    • H05K2201/09472—Recessed pad for surface mounting; Recessed electrode of component
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09—Shape and layout
    • H05K2201/09209—Shape and layout details of conductors
    • H05K2201/095—Conductive through-holes or vias
    • H05K2201/09509—Blind vias, i.e. vias having one side closed
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10613—Details of electrical connections of non-printed components, e.g. special leads
    • H05K2201/10621—Components characterised by their electrical contacts
    • H05K2201/10674—Flip chip
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
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    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10613—Details of electrical connections of non-printed components, e.g. special leads
    • H05K2201/10954—Other details of electrical connections
    • H05K2201/10984—Component carrying a connection agent, e.g. solder, adhesive

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  • General Physics & Mathematics (AREA)
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Abstract

A hybrid-type device is constructed using bumps 4A, which electrically connect the electrodes of function elements 2 arranged on a first plane substrate 1 to those of function elements 7 arranged on a second plane substrate 6, the bumps being formed from conductive thermoplastic resin. Since the thermoplastic resin does not have a definite melting point, the bumps do not short-circuit when one substrate is heated and the two substrates are pressed towards one another while the bumps soften. Further, should a void form under a bump during the pressing, the air in the void is readily forced out through the softened bumps by pressure. For these reasons, a highly reliable device is available. <IMAGE>

Description

HYBRID-TYPE DEVICE AND MANUFACTURING METHOD THEREOF BACKGROUND OF THE INVENTION FIELD OF THE INVENTION The present invention relates to a hybrid-type device and its manufacturing method. More particularly, the invention relates to a hybrid-type device in which a first plane substrate and a second plane substrate are joined by a column-like conductor (bump) so that the device is integrated, and to a method of manufacturing such device.
In the device, function elements are formed either one- or two-dimensionally within a plane. The electrode of each function element is arranged, corresponding to each function element, either one- or two-dimensionally on the first plane substrate, and additional function elements and their electrodes are arranged on the second plane substrate so as to oppose the above-mentioned function elements and their electrodes.
DESCRIPTION OF THE RELATED ART FIG. 1 is a cross section showing the major components of a conventional hybrid-type device. As shown in FIG. 1, function elements 2, such as arrays of photodiodes, are arranged on a first plane substrate 1. The electrodes (not shown) of the function elements 2 are electrically connected through underlying metal strips 3 to bumps 4.
The space between the electrodes of the function elements 2 and the underlying metal strips 3 is coated with an insulating film 5. Another function elements 7, such as charge coupled devices (CCDs), are disposed on a second plane substrate 6 so as to oppose the aforesaid function elements 2. The electrode (not shown) of each function element 7 is provided with an underlying metal strip 8. A space between the electrodes of the function elements 7 and the underlying metal 8 is coated with an insulating film 9.
The bump 4 is formed by metal, such as indium.
The conventional hybrid-type device is constructed as described above, bumps 4 are formed of a metal such as indium. There are two methods of integrating or hybridizing the device shown in FIG. 1 to make a hybridtype device. In other words, the following two methods are available to integrate the device.
As shown in FIG. 2, the first method is the one where two plane substrates 1, 6 are joined by applying pressure to the both substrates 1, 6. In this case a void 10, a closed space, between the underlying metal strip 8 and the bump 4 may be left. Under this condition, when a temperature applied to the device changes, the air pressure in the void 10 will change, thereby causing the bump 4 and the underlying metal strip 8 to separate from each other.
Thus the two plane substrates 1, 6 fail to be joined, resulting in serious problems, such as lessening the device's reliability.
The second method is devised to remove the void 10 as explained in the first method. The second plane substrate 6 is heated before it is pressed against the first plane substrate 1. To be more specific, since the melting point of indium is about 154 OC, when the second plane substrate 6 is pressed against the first plane substrate 1 after the second substrate 6 is heated up to 1600 C, the bump 4 is heated, melted and then attached by the thermal conductivity of the second plane substrate 6 from the tip thereof. When the second method is used, because indium has a high thermal conductivity coefficient, the entire bumps 4 are melted unless temperature for the second plane substrate 6 is precisely controlled. As a result, as shown in FIG. 3, the bumps 4 short-circuit due to a molten bump 11. This is a problem arising from the second method.
As has been described, the conventional hybrid-type device has the following two problems: two substrates cannot be joined because the bumps 4 and the underlying metal strips 8 separate from each other; two substrates cannot be joined since the bumps 4 short-circuit each other.
SUMMARY OF THE INVENTION The present invention is achieved to overcome the above-described problems in the conventional device. It is an object of the present invention to provide a highly reliable hybrid-type device and its manufacturing method.
Accordingly, an object of the present invention is to provide a hybrid-type device comprising: a first plane substrate; a plurality of first function elements arranged either one- or two-dimensionally on the first plane substrate; a second plane substrate; a plurality of second function elements arranged either one- or two-dimensionally on the second plane substrate so as to oppose the first function elements; and a conductive thermoplastic resin member for electrically connecting electrodes of the first function elements to electrodes of the second function elements and for integrating the first and second plane substrates.
Another object of the present invention is to provide a method of manufacturing a hybrid-type device comprising the steps of: providing a conductive thermoplastic resin member on a first plane substrate for electrically connecting to electrodes of first function elements, wherein a plurality of the first function elements are disposed on the first plane substrate either one- or twodimensionally; heating a second plane substrate to a predetermined temperature, wherein a plurality of second function elements are disposed on the second plane substrate either one- or two-dimensionally so as to oppose the first function elements; and pressing the first plane substrate against the second plane substrate thereby electrically connecting between the first and the second function elements by the conductive thermoplastic resin and integrating the first and second plane substrates.
BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic cross-sectional view showing the main components of the conventional hybrid-type device before the device is integrated; FIGS. 2 and 3 are schematic cross-sectional views showing the main components of the conventional hybrid-type device after the device is integrated; FIG. 4 is a schematic cross-sectional view illustrating the main components of a hybrid-type device according to an embodiment of the present invention; and FIG. 5 is a schematic cross-sectional view illustrating the main components of the hybrid-type device before the device is integrated according to an embodiment of the present invention.
DESCRIPTION OF THE PREFERRED EMBODIMENTS In FIGS. 4 and 5, numerals 1 to 3 and 5 to 9 denote the same components as in the conventional device. As shown in FIGS. 4 and 5, function elements 2, such as arrays of photodiodes, are arranged on a first plane substrate 1.
Electrodes (not shown) of the function elements 2 are electrically connected through underlying metal strips 3 to column-like bumps 4A. The space between the underlying metal strips 3 is coated with an insulating film 5.
The aforesaid bump 4A is made of conductive thermoplastic resin, which is obtained by uniformly dispersing metal powder over thermoplastic resin. The thermoplastic resin may be selected from the groups consisting of polyethylene resin (softening point: 110 to l200C), polypropylene resin (softening point: 120 to 1300 C), polyethylene terephtalate resin (softening point: 1500 C or less) and polyethylene - vinyl acetate copolymer (commonly known as hot melt resin: softening point: 100 to 1500 C). As regards the metal powder to be dispersed, silver (Ag), gold (Au), silver-palladium alloy (AgPd), silver-platinum alloy (AgPt), copper (Cu), etc. may be used.
Additional function elements 7, such as charge coupled devices (CCDs), are disposed on a second plane substrate 6 so as to oppose the aforesaid function elements 2.
Electrode (not shown) of each function element 7 is provided with an underlying metal strip 8. The space between the underlying metal strips 8 is coated with an insulating film 9.
In order to join the plane substrates 1 and 6 of such a hybrid-type device as constructed above, the plane substrate 6 is heated up to a predetermined temperature before the plane substrate 1 is lowered to be attached by using pressure on the plane substrate 6. At this time, the bump 4A is heated from its front end, which begins to alter the bumps plasticity. When the device comes to the state described in FIG. 1, application of heat and pressure is stopped. Since the thermoplastic resin of the bump 4A does not have a high thermal conductivity coefficient, unlike metal, nor has it a definite melting point, the bumps 4A do not short-circuit each other as shown in FIG. 3 even if they melt suddenly.Furthermore, should a void 10 as shown in FIG. 2 be made, applied pressure forces the air within the void 10 out without any hindrance owing to the softened bumps 4A, whereby no space is left in the void 10.
Although in this embodiment the bumps 4A are disposed on the first plane substrate 1, they may be arranged on the second plane substrate 6. Moreover, with the same effect as described above, a liquid crystal, a liquid crystal panel, etc. may be utilized as the function element 2, in addition to the photodiode utilized in this embodiment.
Thin film transistors (TFTs) and others can also be used as a function element 7, with the same effect as described above, though charge coupled devices (CCDs) are used in this embodiment.
The invention has been described in detail with particular reference to the preferred embodiment thereof, but it will be understood that variations and modifications of the invention can be made within the spirit and scope of the invention.

Claims (12)

WHAT IS CLAIMED IS:
1. A hybrid-type device comprising: a first plane substrate; a plurality of first function elements arranged either one- or two-dimensionally on said first plane substrate; a second plane substrate; a plurality of second function elements arranged either one- or two-dimensionally on said second plane substrate so as to oppose said first function elements; and a conductive thermoplastic resin member for electrically connecting electrodes of said first function elements to electrodes of said second function elements and for integrating said first and second plane substrates.
2. A hybrid-type device according to claim 1 wherein said conductive thermoplastic resin member is a column-like bump.
3. A hybrid-type device according to claim 1 wherein said conductive thermoplastic resin member is obtained by dispersing uniformly metal powder over thermoplastic resin.
4. A hybrid-type device according to claim 3 wherein said thermoplastic resin is a resin selected from the group consisting of polyethylene resin, polypropylene resin, polyethylene terephtalate resin and polyethylene - vinyl acetate copolymer.
5. A hybrid-type device according to claim 3 wherein said metal powder is a metal powder selected from the group consisting of silver, gold, silver-palladium, silverplatinum and copper.
6. A hybrid-type device according to claim 1 wherein said first function element is a photodiode.
7. A hybrid-type device according to claim 1 wherein said first function element is a liquid crystal device.
8. A hybrid-type device according to claim 1 wherein said second function element is a charge coupled device.
9. A hybrid-type device according to claim 1 wherein said second function element is a thin film transistor.
10. A method of manufacturing a hybrid-type device comprising the steps of: providing a conductive thermoplastic resin member on a first plane substrate for electrically connecting to electrodes of first function elements, wherein a plurality of said first function elements are disposed on said first plane substrate either one- or two-dimensionally; heating a second plane substrate to a predetermined temperature, wherein a plurality of second function elements are disposed on said second plane substrate either one- or two-dimensionally so as to oppose said first function elements; and pressing said first plane substrate against said second plane substrate thereby electrically connecting between said first and said second function elements by said conductive thermoplastic resin and integrating said first and second plane substrates.
11. A hybrid-type device substantially as hereinbefore described with reference to Figure 4 of the accompanying drawings.
12. A method of manufacturing a hybrid-type device according to claim 10 substantially as hereinbefore described.
GB9103393A 1990-04-09 1991-02-19 Hybrid-type device and manufacturing method thereof Expired - Fee Related GB2243032B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2092348A JPH03291947A (en) 1990-04-09 1990-04-09 Hybrid device

Publications (3)

Publication Number Publication Date
GB9103393D0 GB9103393D0 (en) 1991-04-03
GB2243032A true GB2243032A (en) 1991-10-16
GB2243032B GB2243032B (en) 1995-01-04

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
GB9103393A Expired - Fee Related GB2243032B (en) 1990-04-09 1991-02-19 Hybrid-type device and manufacturing method thereof

Country Status (3)

Country Link
JP (1) JPH03291947A (en)
FR (1) FR2660798A1 (en)
GB (1) GB2243032B (en)

Cited By (2)

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Publication number Priority date Publication date Assignee Title
DE4424831A1 (en) * 1994-07-14 1996-01-18 Bosch Gmbh Robert Process for producing an electrically conductive connection
EP0758146A2 (en) * 1995-08-07 1997-02-12 Mitsubishi Denki Kabushiki Kaisha Flip chip semiconductor device

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KR960009074A (en) * 1994-08-29 1996-03-22 모리시다 요이치 Semiconductor device and manufacturing method thereof
JP2671859B2 (en) * 1995-04-14 1997-11-05 日本電気株式会社 Infrared detecting element and manufacturing method thereof
JP3910493B2 (en) * 2002-06-14 2007-04-25 新光電気工業株式会社 Semiconductor device and manufacturing method thereof
JP5549190B2 (en) * 2009-02-27 2014-07-16 豊田合成株式会社 Method for manufacturing semiconductor light emitting element mounting body, method for manufacturing light emitting device, and semiconductor light emitting element

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US4157932A (en) * 1976-11-04 1979-06-12 Canon Kabushiki Kaisha Connecting method
GB2170365A (en) * 1985-01-28 1986-07-30 Sharp Kk Heat sensitive type adhesive connector
US4731503A (en) * 1977-07-21 1988-03-15 Sharp Kabushiki Kaisha Connector with a flexible circuit support
US4770641A (en) * 1986-03-31 1988-09-13 Amp Incorporated Conductive gel interconnection apparatus

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US4067104A (en) * 1977-02-24 1978-01-10 Rockwell International Corporation Method of fabricating an array of flexible metallic interconnects for coupling microelectronics components
JPS58179241A (en) * 1982-04-14 1983-10-20 Toray Ind Inc Foam of electroconductive thermoplastic resin
FR2565408B1 (en) * 1984-05-30 1987-04-10 Thomson Csf DEVICE COMPRISING A PELLET OF AN INTEGRATED CIRCUIT WITH A INSULATED SLAB ON THE HOUSING
JPS629642A (en) * 1985-07-05 1987-01-17 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPH01132138A (en) * 1987-08-13 1989-05-24 Shin Etsu Polymer Co Ltd Electrical connection method of ic chip, material for resin bump formation and liquid crystal display
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Publication number Priority date Publication date Assignee Title
US4157932A (en) * 1976-11-04 1979-06-12 Canon Kabushiki Kaisha Connecting method
US4731503A (en) * 1977-07-21 1988-03-15 Sharp Kabushiki Kaisha Connector with a flexible circuit support
GB2170365A (en) * 1985-01-28 1986-07-30 Sharp Kk Heat sensitive type adhesive connector
US4770641A (en) * 1986-03-31 1988-09-13 Amp Incorporated Conductive gel interconnection apparatus

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4424831A1 (en) * 1994-07-14 1996-01-18 Bosch Gmbh Robert Process for producing an electrically conductive connection
DE4424831C2 (en) * 1994-07-14 1999-04-22 Bosch Gmbh Robert Process for producing an electrically conductive connection
EP0758146A2 (en) * 1995-08-07 1997-02-12 Mitsubishi Denki Kabushiki Kaisha Flip chip semiconductor device
EP0758146A3 (en) * 1995-08-07 1999-08-04 Mitsubishi Denki Kabushiki Kaisha Flip chip semiconductor device

Also Published As

Publication number Publication date
JPH03291947A (en) 1991-12-24
FR2660798B1 (en) 1995-03-10
GB2243032B (en) 1995-01-04
GB9103393D0 (en) 1991-04-03
FR2660798A1 (en) 1991-10-11

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