GB2231719B - Iii-v integrated circuits - Google Patents

Iii-v integrated circuits

Info

Publication number
GB2231719B
GB2231719B GB9004908A GB9004908A GB2231719B GB 2231719 B GB2231719 B GB 2231719B GB 9004908 A GB9004908 A GB 9004908A GB 9004908 A GB9004908 A GB 9004908A GB 2231719 B GB2231719 B GB 2231719B
Authority
GB
United Kingdom
Prior art keywords
iii
integrated circuits
circuits
integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9004908A
Other versions
GB2231719A (en
GB9004908D0 (en
Inventor
Brian Thomas Hughes
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
UK Secretary of State for Defence
Original Assignee
UK Secretary of State for Defence
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by UK Secretary of State for Defence filed Critical UK Secretary of State for Defence
Publication of GB9004908D0 publication Critical patent/GB9004908D0/en
Publication of GB2231719A publication Critical patent/GB2231719A/en
Application granted granted Critical
Publication of GB2231719B publication Critical patent/GB2231719B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/7605Making of isolation regions between components between components manufactured in an active substrate comprising AIII BV compounds
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604Chemical etching
    • H01L21/30612Etching of AIIIBV compounds
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/8252Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using III-V technology
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/1443Devices controlled by radiation with at least one potential jump or surface barrier

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Electromagnetism (AREA)
  • Junction Field-Effect Transistors (AREA)
GB9004908A 1989-03-15 1990-02-27 Iii-v integrated circuits Expired - Fee Related GB2231719B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB898905988A GB8905988D0 (en) 1989-03-15 1989-03-15 Iii-v integrated circuits

Publications (3)

Publication Number Publication Date
GB9004908D0 GB9004908D0 (en) 1990-05-02
GB2231719A GB2231719A (en) 1990-11-21
GB2231719B true GB2231719B (en) 1993-03-31

Family

ID=10653399

Family Applications (2)

Application Number Title Priority Date Filing Date
GB898905988A Pending GB8905988D0 (en) 1989-03-15 1989-03-15 Iii-v integrated circuits
GB9004908A Expired - Fee Related GB2231719B (en) 1989-03-15 1990-02-27 Iii-v integrated circuits

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GB898905988A Pending GB8905988D0 (en) 1989-03-15 1989-03-15 Iii-v integrated circuits

Country Status (1)

Country Link
GB (2) GB8905988D0 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5279704A (en) * 1991-04-23 1994-01-18 Honda Giken Kogyo Kabushiki Kaisha Method of fabricating semiconductor device
CN112071869B (en) * 2020-08-28 2022-09-30 深圳市奥伦德元器件有限公司 Photovoltaic driver for solid-state relay and preparation method thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2145558A (en) * 1983-08-23 1985-03-27 Standard Telephones Cables Ltd Field effect transistor
WO1986006546A1 (en) * 1985-04-26 1986-11-06 American Telephone & Telegraph Company Process for making semiconductor devices which involve gaseous etching

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2145558A (en) * 1983-08-23 1985-03-27 Standard Telephones Cables Ltd Field effect transistor
WO1986006546A1 (en) * 1985-04-26 1986-11-06 American Telephone & Telegraph Company Process for making semiconductor devices which involve gaseous etching

Also Published As

Publication number Publication date
GB2231719A (en) 1990-11-21
GB9004908D0 (en) 1990-05-02
GB8905988D0 (en) 1989-04-26

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Legal Events

Date Code Title Description
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)
PCNP Patent ceased through non-payment of renewal fee