GB2228141B - P-n-p diamond transistor - Google Patents

P-n-p diamond transistor

Info

Publication number
GB2228141B
GB2228141B GB8912354A GB8912354A GB2228141B GB 2228141 B GB2228141 B GB 2228141B GB 8912354 A GB8912354 A GB 8912354A GB 8912354 A GB8912354 A GB 8912354A GB 2228141 B GB2228141 B GB 2228141B
Authority
GB
United Kingdom
Prior art keywords
diamond transistor
diamond
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB8912354A
Other versions
GB8912354D0 (en
GB2228141A (en
Inventor
Christopher Mark Welbourn
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Gersan Ets
Original Assignee
Gersan Ets
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gersan Ets filed Critical Gersan Ets
Publication of GB8912354D0 publication Critical patent/GB8912354D0/en
Priority to CA002046284A priority Critical patent/CA2046284C/en
Priority to JP2502686A priority patent/JP2557567B2/en
Priority to US07/721,558 priority patent/US5177585A/en
Priority to DE69014861T priority patent/DE69014861T2/en
Priority to PCT/GB1990/000143 priority patent/WO1990009033A1/en
Priority to EP90902330A priority patent/EP0456682B1/en
Priority to KR1019910700819A priority patent/KR0146039B1/en
Priority to AU49619/90A priority patent/AU630663B2/en
Publication of GB2228141A publication Critical patent/GB2228141A/en
Application granted granted Critical
Publication of GB2228141B publication Critical patent/GB2228141B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1602—Diamond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/735—Lateral transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Bipolar Transistors (AREA)
GB8912354A 1989-02-01 1989-05-30 P-n-p diamond transistor Expired - Fee Related GB2228141B (en)

Priority Applications (8)

Application Number Priority Date Filing Date Title
PCT/GB1990/000143 WO1990009033A1 (en) 1989-02-01 1990-02-01 P-n-p diamond transistor
JP2502686A JP2557567B2 (en) 1989-02-01 1990-02-01 P-NP diamond transistor and method of manufacturing the same
US07/721,558 US5177585A (en) 1989-02-01 1990-02-01 P-n-p diamond transistor
DE69014861T DE69014861T2 (en) 1989-02-01 1990-02-01 P-N-P DIAMOND TRANSISTOR.
CA002046284A CA2046284C (en) 1989-02-01 1990-02-01 P-n-p diamond transistor
EP90902330A EP0456682B1 (en) 1989-02-01 1990-02-01 P-n-p diamond transistor
KR1019910700819A KR0146039B1 (en) 1989-02-01 1990-02-01 P-n-p diamond transistor
AU49619/90A AU630663B2 (en) 1989-02-01 1990-02-01 P-n-p diamond transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB898902135A GB8902135D0 (en) 1989-02-01 1989-02-01 P-n-p diamond transistor

Publications (3)

Publication Number Publication Date
GB8912354D0 GB8912354D0 (en) 1989-07-12
GB2228141A GB2228141A (en) 1990-08-15
GB2228141B true GB2228141B (en) 1992-11-18

Family

ID=10650914

Family Applications (2)

Application Number Title Priority Date Filing Date
GB898902135A Pending GB8902135D0 (en) 1989-02-01 1989-02-01 P-n-p diamond transistor
GB8912354A Expired - Fee Related GB2228141B (en) 1989-02-01 1989-05-30 P-n-p diamond transistor

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GB898902135A Pending GB8902135D0 (en) 1989-02-01 1989-02-01 P-n-p diamond transistor

Country Status (2)

Country Link
KR (1) KR0146039B1 (en)
GB (2) GB8902135D0 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5173761A (en) * 1991-01-28 1992-12-22 Kobe Steel Usa Inc., Electronic Materials Center Semiconducting polycrystalline diamond electronic devices employing an insulating diamond layer
JP3051912B2 (en) * 1996-09-03 2000-06-12 科学技術庁無機材質研究所長 Synthesis method of phosphorus-doped diamond

Also Published As

Publication number Publication date
GB8912354D0 (en) 1989-07-12
KR0146039B1 (en) 1998-11-02
GB2228141A (en) 1990-08-15
GB8902135D0 (en) 1989-03-22
KR920702015A (en) 1992-08-12

Similar Documents

Publication Publication Date Title
EP0457508A3 (en) Diamond semiconductor device
EP0247386A3 (en) Lateral transistor
EP0588260A3 (en) Diamond semiconductor device.
GB2237446B (en) Semi-conductor device
EP0306258A3 (en) Transistor
EP0454736A4 (en) Fibrinolysis
GB8719842D0 (en) Transistor
EP0712164A3 (en) Semiconductor device
GB2228826B (en) Semiconductor device
GB8901342D0 (en) Semiconductor device
EP0405564A3 (en) Field effect transistor
EP0412772A3 (en) Semi-conductor device
GB2228141B (en) P-n-p diamond transistor
EP0415318A3 (en) Semiconductor device
KR0130643B1 (en) Lateral-type semiconductor device
ZA891546B (en) Gas-fluxing stone
GB8914554D0 (en) Semiconductor device
EP0405501A3 (en) Semiconductor device
EP0421404A3 (en) Semiconductor device
EP0392461A3 (en) Semiconductor device prepared from diamond
GB2239735B (en) Velocity-modulation transistor
GB8913070D0 (en) Semiconductor device
EP0389964A3 (en) Bridged-emitter doped-silicide transistor
GB8619426D0 (en) Transistor
GB8923956D0 (en) Sinks

Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20060530