GB2202373B - Field effect transistor structure - Google Patents

Field effect transistor structure

Info

Publication number
GB2202373B
GB2202373B GB8706564A GB8706564A GB2202373B GB 2202373 B GB2202373 B GB 2202373B GB 8706564 A GB8706564 A GB 8706564A GB 8706564 A GB8706564 A GB 8706564A GB 2202373 B GB2202373 B GB 2202373B
Authority
GB
United Kingdom
Prior art keywords
field effect
effect transistor
transistor structure
field
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB8706564A
Other versions
GB8706564D0 (en
GB2202373A (en
Inventor
Wong Sang Lee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
STC PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STC PLC filed Critical STC PLC
Priority to GB8706564A priority Critical patent/GB2202373B/en
Publication of GB8706564D0 publication Critical patent/GB8706564D0/en
Publication of GB2202373A publication Critical patent/GB2202373A/en
Application granted granted Critical
Publication of GB2202373B publication Critical patent/GB2202373B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45376—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using junction FET transistors as the active amplifying circuit
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0605—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits made of compound material, e.g. AIIIBV
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Amplifiers (AREA)
GB8706564A 1987-03-19 1987-03-19 Field effect transistor structure Expired - Fee Related GB2202373B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB8706564A GB2202373B (en) 1987-03-19 1987-03-19 Field effect transistor structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB8706564A GB2202373B (en) 1987-03-19 1987-03-19 Field effect transistor structure

Publications (3)

Publication Number Publication Date
GB8706564D0 GB8706564D0 (en) 1987-04-23
GB2202373A GB2202373A (en) 1988-09-21
GB2202373B true GB2202373B (en) 1990-03-28

Family

ID=10614254

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8706564A Expired - Fee Related GB2202373B (en) 1987-03-19 1987-03-19 Field effect transistor structure

Country Status (1)

Country Link
GB (1) GB2202373B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990087054A (en) * 1996-12-20 1999-12-15 요트.게.아. 롤페즈 Amplifier with Improved Output Voltage Swing

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0146430A2 (en) * 1983-11-08 1985-06-26 Thomson-Csf Field-effect transistor having a regulable threshold voltage, and integrated circuit comprising that transistor
EP0176754A1 (en) * 1984-08-27 1986-04-09 Sumitomo Electric Industries Limited Schottky-gate field effect transistor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0146430A2 (en) * 1983-11-08 1985-06-26 Thomson-Csf Field-effect transistor having a regulable threshold voltage, and integrated circuit comprising that transistor
EP0176754A1 (en) * 1984-08-27 1986-04-09 Sumitomo Electric Industries Limited Schottky-gate field effect transistor

Also Published As

Publication number Publication date
GB8706564D0 (en) 1987-04-23
GB2202373A (en) 1988-09-21

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee