GB2198965B - Lids for improved dendritic web growth. - Google Patents

Lids for improved dendritic web growth.

Info

Publication number
GB2198965B
GB2198965B GB8719475A GB8719475A GB2198965B GB 2198965 B GB2198965 B GB 2198965B GB 8719475 A GB8719475 A GB 8719475A GB 8719475 A GB8719475 A GB 8719475A GB 2198965 B GB2198965 B GB 2198965B
Authority
GB
United Kingdom
Prior art keywords
lids
dendritic web
web growth
improved dendritic
improved
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
GB8719475A
Other languages
English (en)
Other versions
GB8719475D0 (en
GB2198965A (en
Inventor
Charles Stuart Duncan
Edgar Leonard Kochka
Paul Anthony Piotrowski
Raymond George Seidensticker
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Westinghouse Electric Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of GB8719475D0 publication Critical patent/GB8719475D0/en
Publication of GB2198965A publication Critical patent/GB2198965A/en
Application granted granted Critical
Publication of GB2198965B publication Critical patent/GB2198965B/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
GB8719475A 1986-12-18 1987-08-18 Lids for improved dendritic web growth. Expired - Lifetime GB2198965B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US94309286A 1986-12-18 1986-12-18

Publications (3)

Publication Number Publication Date
GB8719475D0 GB8719475D0 (en) 1987-09-23
GB2198965A GB2198965A (en) 1988-06-29
GB2198965B true GB2198965B (en) 1990-10-31

Family

ID=25479092

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8719475A Expired - Lifetime GB2198965B (en) 1986-12-18 1987-08-18 Lids for improved dendritic web growth.

Country Status (7)

Country Link
JP (1) JP2627901B2 (forum.php)
KR (1) KR960000061B1 (forum.php)
AU (1) AU586757B2 (forum.php)
GB (1) GB2198965B (forum.php)
IN (1) IN168114B (forum.php)
IT (1) IT1229975B (forum.php)
MY (1) MY101906A (forum.php)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4751059A (en) * 1986-12-05 1988-06-14 Westinghouse Electric Corp. Apparatus for growing dendritic web crystals of constant width
US4828808A (en) * 1987-09-02 1989-05-09 The United States Of America As Represented By The United States Department Of Energy Apparatus for silicon web growth of higher output and improved growth stability
US6093244A (en) * 1997-04-10 2000-07-25 Ebara Solar, Inc. Silicon ribbon growth dendrite thickness control system
DE69936883T2 (de) * 1999-02-02 2008-02-28 Ebara Corp. Vorrichtung zur reglung der schichtdicke eines dendrits während der züchtung eines siliziumbandes
JP6028308B1 (ja) * 2015-10-29 2016-11-16 並木精密宝石株式会社 Ｅｆｇ法用育成炉の熱反射板構造
JP5923700B1 (ja) * 2015-11-30 2016-05-25 並木精密宝石株式会社 大型ｅｆｇ法用育成炉の蓋体構造

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IN161924B (forum.php) * 1984-10-29 1988-02-27 Westinghouse Electric Corp
US4751059A (en) * 1986-12-05 1988-06-14 Westinghouse Electric Corp. Apparatus for growing dendritic web crystals of constant width

Also Published As

Publication number Publication date
IN168114B (forum.php) 1991-02-09
AU7668987A (en) 1988-06-23
KR880007196A (ko) 1988-08-26
IT1229975B (it) 1991-09-20
AU586757B2 (en) 1989-07-20
GB8719475D0 (en) 1987-09-23
KR960000061B1 (ko) 1996-01-03
JP2627901B2 (ja) 1997-07-09
GB2198965A (en) 1988-06-29
JPS63166788A (ja) 1988-07-09
IT8741659A0 (it) 1987-08-17
MY101906A (en) 1992-02-15

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Legal Events

Date Code Title Description
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20030818