GB2180842B - A novel positive-working photoresist composition - Google Patents

A novel positive-working photoresist composition

Info

Publication number
GB2180842B
GB2180842B GB08619368A GB8619368A GB2180842B GB 2180842 B GB2180842 B GB 2180842B GB 08619368 A GB08619368 A GB 08619368A GB 8619368 A GB8619368 A GB 8619368A GB 2180842 B GB2180842 B GB 2180842B
Authority
GB
United Kingdom
Prior art keywords
photoresist composition
working photoresist
novel positive
novel
positive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB08619368A
Other versions
GB2180842A (en
GB8619368D0 (en
Inventor
Akira Yokota
Hisashi Nakane
Hidekatsu Kohara
Hatsuyuki Tanaka
Masanori Miyabe
Yoshiaki Arai
Shingo Asaumi
Toshimasa Nakayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Ohka Kogyo Co Ltd
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Publication of GB8619368D0 publication Critical patent/GB8619368D0/en
Publication of GB2180842A publication Critical patent/GB2180842A/en
Application granted granted Critical
Publication of GB2180842B publication Critical patent/GB2180842B/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G8/00—Condensation polymers of aldehydes or ketones with phenols only
    • C08G8/04—Condensation polymers of aldehydes or ketones with phenols only of aldehydes
    • C08G8/08—Condensation polymers of aldehydes or ketones with phenols only of aldehydes of formaldehyde, e.g. of formaldehyde formed in situ
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/36—Sulfur-, selenium-, or tellurium-containing compounds
    • C08K5/41—Compounds containing sulfur bound to oxygen
    • C08K5/42—Sulfonic acids; Derivatives thereof

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Materials For Photolithography (AREA)
  • Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
GB08619368A 1985-08-09 1986-08-08 A novel positive-working photoresist composition Expired GB2180842B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60174316A JPH0650396B2 (en) 1985-08-09 1985-08-09 Positive photoresist composition

Publications (3)

Publication Number Publication Date
GB8619368D0 GB8619368D0 (en) 1986-09-17
GB2180842A GB2180842A (en) 1987-04-08
GB2180842B true GB2180842B (en) 1988-07-06

Family

ID=15976518

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08619368A Expired GB2180842B (en) 1985-08-09 1986-08-08 A novel positive-working photoresist composition

Country Status (3)

Country Link
JP (1) JPH0650396B2 (en)
DE (1) DE3626582A1 (en)
GB (1) GB2180842B (en)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0650396B2 (en) * 1985-08-09 1994-06-29 東京応化工業株式会社 Positive photoresist composition
US5281508A (en) * 1985-08-09 1994-01-25 Tokyo Ohka Kogyo Co., Ltd. Positive-working photoresist containing o-naphthoquinone diazide sulfonic acid ester and novolak resin consisting of 35 to 43% m-cresol and 65 to 57% p-cresol with substantial absence of o-cresol
JPH0654391B2 (en) * 1987-03-06 1994-07-20 住友化学工業株式会社 Positive resist composition for electron beam or X-ray
JP2693472B2 (en) * 1987-11-26 1997-12-24 株式会社東芝 Resist
JP2618940B2 (en) * 1987-11-27 1997-06-11 東京応化工業株式会社 Positive photoresist composition
JP2618947B2 (en) * 1988-01-08 1997-06-11 東京応化工業株式会社 Positive photoresist composition
DE3839906A1 (en) * 1987-11-27 1989-06-08 Tokyo Ohka Kogyo Co Ltd POSITIVELY WORKING LIGHT SENSITIVE COMPOSITION, METHOD FOR THEIR PRODUCTION AND THEIR USE
JPH0658530B2 (en) * 1988-04-22 1994-08-03 東京応化工業株式会社 Positive photosensitive composition
JP2505033B2 (en) * 1988-11-28 1996-06-05 東京応化工業株式会社 Electron beam resist composition and method for forming fine pattern using the same
JPH02222955A (en) * 1989-02-23 1990-09-05 Tokyo Ohka Kogyo Co Ltd Positive type photosensitive composition
JPH03253859A (en) * 1990-03-05 1991-11-12 Fuji Photo Film Co Ltd Ionizing radiation sensitive resin composition
JP2919142B2 (en) * 1990-12-27 1999-07-12 株式会社東芝 Photosensitive composition and pattern forming method using the same
JP2935223B2 (en) * 1992-04-14 1999-08-16 東京応化工業株式会社 Method for producing resist pattern forming material and method for forming tantalum pattern
US5332647A (en) * 1992-08-26 1994-07-26 Tokyo Ohka Kogyo Co., Ltd. Positive-working quinone diazide composition containing N,N',N"-substituted isocyanurate compound and associated article
JP3562673B2 (en) 1996-01-22 2004-09-08 富士写真フイルム株式会社 Positive photoresist composition

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2616992A1 (en) * 1976-04-17 1977-11-03 Agfa Gevaert Ag Photopolymer printing plate and photoresist compsn. - contain alkyl-phenol novolak giving elasticity and stability towards alkali
JPS561045A (en) * 1979-06-16 1981-01-08 Konishiroku Photo Ind Co Ltd Photosensitive composition
JPS5817112A (en) * 1981-06-22 1983-02-01 フイリツプ・エイ・ハント・ケミカル・コ−ポレイシヨン Positive novolak photoresist composition and blend
EP0070624B1 (en) * 1981-06-22 1986-11-20 Philip A. Hunt Chemical Corporation Novolak resin and a positive photoresist composition containing the same
CA1255952A (en) * 1983-03-04 1989-06-20 Akihiro Furuta Positive type photoresist composition
JPS6057339A (en) * 1983-09-08 1985-04-03 Sumitomo Chem Co Ltd Positive type photoresist composition
EP0148787A3 (en) * 1984-01-10 1987-05-06 Japan Synthetic Rubber Co., Ltd. Positive type photosensitive resin composition
JPS616647A (en) * 1984-06-20 1986-01-13 Konishiroku Photo Ind Co Ltd Photosensitive composition for postive type photosensitive lighographic printing plafe
US5281508A (en) * 1985-08-09 1994-01-25 Tokyo Ohka Kogyo Co., Ltd. Positive-working photoresist containing o-naphthoquinone diazide sulfonic acid ester and novolak resin consisting of 35 to 43% m-cresol and 65 to 57% p-cresol with substantial absence of o-cresol
JPH0650396B2 (en) * 1985-08-09 1994-06-29 東京応化工業株式会社 Positive photoresist composition

Also Published As

Publication number Publication date
GB2180842A (en) 1987-04-08
DE3626582C2 (en) 1989-03-09
GB8619368D0 (en) 1986-09-17
JPS6235349A (en) 1987-02-16
DE3626582A1 (en) 1987-02-19
JPH0650396B2 (en) 1994-06-29

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20040808