GB2163900B - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
GB2163900B
GB2163900B GB08519121A GB8519121A GB2163900B GB 2163900 B GB2163900 B GB 2163900B GB 08519121 A GB08519121 A GB 08519121A GB 8519121 A GB8519121 A GB 8519121A GB 2163900 B GB2163900 B GB 2163900B
Authority
GB
United Kingdom
Prior art keywords
semiconductor device
crystal structure
layered crystal
substrate
superlatticed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB08519121A
Other languages
English (en)
Other versions
GB2163900A (en
GB8519121D0 (en
Inventor
Toshiro Hayakawa
Takahiro Suyama
Suburo Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Publication of GB8519121D0 publication Critical patent/GB8519121D0/en
Publication of GB2163900A publication Critical patent/GB2163900A/en
Application granted granted Critical
Publication of GB2163900B publication Critical patent/GB2163900B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0261—Non-optical elements, e.g. laser driver components, heaters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2238—Buried stripe structure with a terraced structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2907—Materials being Group IIIA-VA materials
    • H10P14/2911—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2924—Structures
    • H10P14/2925—Surface structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3221—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3244—Layer structure
    • H10P14/3251—Layer structure consisting of three or more layers
    • H10P14/3252—Alternating layers, e.g. superlattice
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3421—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/435—Cross-sectional shapes or dispositions of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/44—Conductive materials thereof
    • H10W20/4451—Semiconductor materials, e.g. polysilicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
    • H01S5/3432—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs the whole junction comprising only (AI)GaAs

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geometry (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Semiconductor Lasers (AREA)
  • Junction Field-Effect Transistors (AREA)
GB08519121A 1984-07-31 1985-07-30 Semiconductor device Expired GB2163900B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16321384A JPS6140082A (ja) 1984-07-31 1984-07-31 半導体装置

Publications (3)

Publication Number Publication Date
GB8519121D0 GB8519121D0 (en) 1985-09-04
GB2163900A GB2163900A (en) 1986-03-05
GB2163900B true GB2163900B (en) 1988-06-08

Family

ID=15769446

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08519121A Expired GB2163900B (en) 1984-07-31 1985-07-30 Semiconductor device

Country Status (4)

Country Link
US (1) US4941024A (enExample)
JP (1) JPS6140082A (enExample)
DE (1) DE3527269A1 (enExample)
GB (1) GB2163900B (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3821775A1 (de) * 1988-06-28 1990-01-11 Siemens Ag Halbleiterschichtstruktur fuer laserdiode mit vergrabener heterostruktur
EP0535293A1 (en) * 1991-01-29 1993-04-07 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. A method of fabricating a compositional semiconductor device
EP0642154B1 (en) * 1993-09-03 1998-03-04 Mitsubishi Chemical Corporation Process for producing group III-V compound semiconductor and group III-V compound semiconductor
JP2000022128A (ja) 1998-07-06 2000-01-21 Murata Mfg Co Ltd 半導体発光素子、および光電子集積回路素子
JP4009106B2 (ja) * 2001-12-27 2007-11-14 浜松ホトニクス株式会社 半導体受光素子、及びその製造方法
JP4109159B2 (ja) * 2003-06-13 2008-07-02 浜松ホトニクス株式会社 半導体受光素子
WO2008063704A2 (en) * 2006-05-03 2008-05-29 Rochester Institute Of Technology Nanostructured quantum dots or dashes in photovoltaic devices and methods thereof
US20080121271A1 (en) * 2006-05-03 2008-05-29 Rochester Institute Of Technology Multi-junction, photovoltaic devices with nanostructured spectral enhancements and methods thereof

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55158691A (en) * 1979-05-30 1980-12-10 Sumitomo Electric Ind Ltd Semiconductor light emitting device manufacture thereof
GB2115608B (en) * 1982-02-24 1985-10-30 Plessey Co Plc Semi-conductor lasers
NL8301215A (nl) * 1983-04-07 1984-11-01 Philips Nv Halfgeleiderinrichting voor het opwekken van electromagnetische straling.
JPS6167286A (ja) * 1984-09-07 1986-04-07 Sharp Corp 半導体レ−ザアレイ素子
US4591889A (en) * 1984-09-14 1986-05-27 At&T Bell Laboratories Superlattice geometry and devices

Also Published As

Publication number Publication date
DE3527269C2 (enExample) 1989-12-14
JPS6140082A (ja) 1986-02-26
GB2163900A (en) 1986-03-05
US4941024A (en) 1990-07-10
GB8519121D0 (en) 1985-09-04
DE3527269A1 (de) 1986-02-06

Similar Documents

Publication Publication Date Title
EP0373893A3 (en) Mos type field effect transistor formed on a semiconductor layer on an insulator substrate
AU591876B2 (en) Multi-layer polypropylene film structure and method of forming the same
EP0251767A3 (en) Insulated gate type semiconductor device and method of producing the same
EP0235819A3 (en) Process for producing single crystal semiconductor layer and semiconductor device produced by said process
GB2220792B (en) Silicon thin film transistor and method for producing the same
WO1987007651A1 (en) Semiconductor manufacturing apparatus
DE68917790D1 (de) Aufzeichnungskopf mit Flüssigkeitsemission, Substrat hierfür sowie Aufzeichnungsgerät mit Flüssigkeitsemission unter Verwendung dieses Kopfes.
FR2599558B1 (fr) Procede de realisation d'un dispositif semi-conducteur, incluant le depot en phase vapeur de couches sur un substrat
GB2163900B (en) Semiconductor device
EP0630044A3 (en) Manufacture of a prescribed pattern over a semiconductor device layer.
EP0311444A3 (en) A semiconductor laser device
SE9000245D0 (sv) Halvledarkomponent och foerfarande foer dess framstaellning
EP0200460A3 (en) A semiconductor laser device
DE69308976D1 (de) Spinpolarisierte Elektronenquelle mit optoelektronischer Halbleiterschicht mit geteiltem Valenzband
CA1268846C (en) SEMICONDUCTOR LASER WITH MESA STRUCTURE
DE3780327D1 (de) Herstellungsverfahren einer halbleiter-kristallschicht.
DE3562102D1 (en) Semiconductor device manufacture using molecular beam epitaxy with source temperature control
AU7078787A (en) Crystal on sub-strate
DE68918746D1 (de) Halbleitersubstrat mit dünner Supraleiterschicht.
DE3888341D1 (de) Halbleitersubstrat mit einem supraleitenden Dünnfilm.
GB2202371B (en) Semiconductor device
JPS5530855A (en) Semiconductor optical device
EP0349001A3 (en) Semiconductor device having a stress relief film protected against cracking
EP0463807A3 (en) Method of making a semiconductor device using epitaxial growth of a semiconductor layer on a semiconductor substrate
DE3780808D1 (de) Halbleiterlaser mit umgekehrtem kanal und ebenem substrat.

Legal Events

Date Code Title Description
PE20 Patent expired after termination of 20 years

Effective date: 20050729