GB2145360B - Reactive ion etching - Google Patents

Reactive ion etching

Info

Publication number
GB2145360B
GB2145360B GB08418364A GB8418364A GB2145360B GB 2145360 B GB2145360 B GB 2145360B GB 08418364 A GB08418364 A GB 08418364A GB 8418364 A GB8418364 A GB 8418364A GB 2145360 B GB2145360 B GB 2145360B
Authority
GB
United Kingdom
Prior art keywords
reactive ion
ion etching
etching
reactive
ion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB08418364A
Other versions
GB2145360A (en
GB8418364D0 (en
Inventor
Nigel Gordon Chew
Anthony George Cullis
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
UK Secretary of State for Defence
Original Assignee
UK Secretary of State for Defence
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by UK Secretary of State for Defence filed Critical UK Secretary of State for Defence
Publication of GB8418364D0 publication Critical patent/GB8418364D0/en
Publication of GB2145360A publication Critical patent/GB2145360A/en
Application granted granted Critical
Publication of GB2145360B publication Critical patent/GB2145360B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/465—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/2633—Bombardment with radiation with high-energy radiation for etching, e.g. sputteretching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/42—Bombardment with radiation
    • H01L21/423—Bombardment with radiation with high-energy radiation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Drying Of Semiconductors (AREA)
GB08418364A 1983-07-21 1984-07-18 Reactive ion etching Expired GB2145360B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB838319716A GB8319716D0 (en) 1983-07-21 1983-07-21 Reactive ion etching

Publications (3)

Publication Number Publication Date
GB8418364D0 GB8418364D0 (en) 1984-08-22
GB2145360A GB2145360A (en) 1985-03-27
GB2145360B true GB2145360B (en) 1987-01-07

Family

ID=10546079

Family Applications (2)

Application Number Title Priority Date Filing Date
GB838319716A Pending GB8319716D0 (en) 1983-07-21 1983-07-21 Reactive ion etching
GB08418364A Expired GB2145360B (en) 1983-07-21 1984-07-18 Reactive ion etching

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GB838319716A Pending GB8319716D0 (en) 1983-07-21 1983-07-21 Reactive ion etching

Country Status (1)

Country Link
GB (2) GB8319716D0 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2202236B (en) * 1987-03-09 1991-04-24 Philips Electronic Associated Manufacture of electronic devices comprising cadmium mercury telluride
US5009743A (en) * 1989-11-06 1991-04-23 Gatan Incorporated Chemically-assisted ion beam milling system for the preparation of transmission electron microscope specimens
JP4099181B2 (en) * 2005-07-11 2008-06-11 Ｔｄｋ株式会社 Ion beam etching method and ion beam etching apparatus

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3860783A (en) * 1970-10-19 1975-01-14 Bell Telephone Labor Inc Ion etching through a pattern mask
GB1448825A (en) * 1972-12-21 1976-09-08 Atomic Energy Authority Uk Inspection of metals for devects
US3943047A (en) * 1974-05-10 1976-03-09 Bell Telephone Laboratories, Incorporated Selective removal of material by sputter etching
US3994793A (en) * 1975-05-22 1976-11-30 International Business Machines Corporation Reactive ion etching of aluminum
US4092442A (en) * 1976-12-30 1978-05-30 International Business Machines Corporation Method of depositing thin films utilizing a polyimide mask
NL8004005A (en) * 1980-07-11 1982-02-01 Philips Nv METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE

Also Published As

Publication number Publication date
GB2145360A (en) 1985-03-27
GB8418364D0 (en) 1984-08-22
GB8319716D0 (en) 1983-08-24

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Legal Events

Date Code Title Description
732 Registration of transactions, instruments or events in the register (sect. 32/1977)
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20000718