GB2145360A - Reactive ion etching - Google Patents
Reactive ion etching Download PDFInfo
- Publication number
- GB2145360A GB2145360A GB08418364A GB8418364A GB2145360A GB 2145360 A GB2145360 A GB 2145360A GB 08418364 A GB08418364 A GB 08418364A GB 8418364 A GB8418364 A GB 8418364A GB 2145360 A GB2145360 A GB 2145360A
- Authority
- GB
- United Kingdom
- Prior art keywords
- ion
- ion beam
- sample
- chamber
- iodine
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000001020 plasma etching Methods 0.000 title description 3
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 28
- 150000002500 ions Chemical class 0.000 claims abstract description 26
- 239000000463 material Substances 0.000 claims abstract description 25
- 238000005530 etching Methods 0.000 claims abstract description 15
- 229910052740 iodine Inorganic materials 0.000 claims abstract description 15
- 239000011630 iodine Substances 0.000 claims abstract description 15
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000004065 semiconductor Substances 0.000 claims abstract description 12
- 239000003708 ampul Substances 0.000 claims abstract description 11
- 239000007787 solid Substances 0.000 claims abstract description 9
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims abstract description 5
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052794 bromium Inorganic materials 0.000 claims abstract description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 4
- 239000007788 liquid Substances 0.000 claims abstract description 4
- 239000000758 substrate Substances 0.000 claims abstract 2
- 238000000034 method Methods 0.000 claims description 11
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical group [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 5
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 claims description 3
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 claims description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910000673 Indium arsenide Inorganic materials 0.000 claims description 3
- 239000005083 Zinc sulfide Substances 0.000 claims description 3
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 claims description 3
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims description 3
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims description 3
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 claims description 2
- MCMSPRNYOJJPIZ-UHFFFAOYSA-N cadmium;mercury;tellurium Chemical compound [Cd]=[Te]=[Hg] MCMSPRNYOJJPIZ-UHFFFAOYSA-N 0.000 claims description 2
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 claims description 2
- 229910002059 quaternary alloy Inorganic materials 0.000 claims description 2
- 229910002058 ternary alloy Inorganic materials 0.000 claims description 2
- 238000001816 cooling Methods 0.000 abstract description 3
- 238000010438 heat treatment Methods 0.000 abstract description 3
- 229910004613 CdTe Inorganic materials 0.000 abstract 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 abstract 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-M iodide Chemical compound [I-] XMBWDFGMSWQBCA-UHFFFAOYSA-M 0.000 description 6
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- 230000007935 neutral effect Effects 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- 238000007323 disproportionation reaction Methods 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- -1 iodine ions Chemical class 0.000 description 2
- 238000000386 microscopy Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910005540 GaP Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000002939 deleterious effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000001493 electron microscopy Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000005057 refrigeration Methods 0.000 description 1
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- RMUKCGUDVKEQPL-UHFFFAOYSA-K triiodoindigane Chemical class I[In](I)I RMUKCGUDVKEQPL-UHFFFAOYSA-K 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/465—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/2633—Bombardment with radiation with high-energy radiation for etching, e.g. sputteretching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/42—Bombardment with radiation
- H01L21/423—Bombardment with radiation with high-energy radiation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- High Energy & Nuclear Physics (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Samples of a semiconductor material are subjected to ion beam etching in a vacuum chamber 13. The beam consists of ions of iodine or bromine. The substrate may be InP, InA, GaAs, ZnS, ZnSe, CdTe, CdxHg1-xTe. An iodine beam is formed in an ion gun 15 from vapour obtained from a solid or liquid source contained in an ampule connected to the vacuum chamber. The ampule may have independent heating and cooling means. Ion current is monitored by an ammeter 10 measuring a rear beam 17 produced by a symmetrical gun. A beam 6 from a further gun may etch the underside of the sample. <IMAGE>
Description
SPECIFICATION
Reactive ion etching
This invention concerns a method and apparatus for the etching of semiconductor material by use of an ion beam and, in particular, it concerns a process which avoids unwanted disproportionation of a compound semiconductor during such etching.
Conventional ion beam etching is described in the Journal of Vacuum Science and Technology, volume 8 (1981), pages 552-570.
One use of ion beam etching is the thinning of a slab of semiconductor to electron transparency for transmission electron microscope observations.
Typically, a piece of material which requires to be studied by microscopy is first reduced to a thickness of about 50 Fm by mechanical polishing with fine silicon carbide and diamond powders. However, this treatment introduces microscopic surface scratches into the sample and cannot be continued down to the final required sample thickness of typically less than 1 Fm for microscopy with electrons of energy 100 keV-1MeV. Instead, an ion beam is often used to finish the thinning process by a sputtering mechanism. For a material such as silicon, the mechanically pre-thinned sample is supported in a vacuum chamber and, typically, 10~100 FA beams of Are ions at 0.5-10 keV are employed.
The ion beams which may also contain neutral atoms, are derived from gaseous Ar which is fed into an ion gun with electrodes maintained at the appropriate potentials.
This same technique can be used to etch semiconductors other than silicon but, if the material is a compound of two or more component elements, the ion beam may remove the different atoms in unequal proportions. This phenomenon can be a serious problem, particularly if the compound material contains indium: for example, as in indium phosphide. Under conventional ion beam etching conditions, indium atoms can remain preferentially on the bombarded surface where they aggregate to form microscopic islands of metallic indium.
Such islands can occur in large numbers when they obscure the surface and cause serious problems in subsequent electron microscopy.
According to this invention, an ion beam which suppresses the deleterious disproportionation is composed of iodine ions.
According to this invention a method of etching samples of semiconductor materials comprises the steps of mounting a sample in a vacuum chamber, and directing an ion beam at the sample, the ion beam being composed of iodine, or bromine.
The semiconductor material may be indium phosphide, indium arsenide, indium antimonide, gallium arsenide, zinc sulphide, zinc selenide, cadmium telluride, CDxHgi#Te, and other Ill-V and lI-VI materials together with ternary and quaternary alloys formed from these materials.
According to this invention apparatus for etching samples of semiconductor materials comprises a vacuum chamber, pumps for maintaining a vacuum within the chamber, a holder inside the chamber for holding the samples, and means for providing an ion beam for directing ions onto the sample, such means comprising an ion beam gun and a source of iodine or bromine material to form ions.
The sample holder may include means for cooling and rotating the sample.
The source of ion material may be a solid or liquid source contained in an ampule connected to the ion gun via a valve.
The ion beam may be generated by ionisation of iodine vapour in an ion gun maintained within a vacuum ambient. The vapour is derived from a source of solid iodine contained in an ampule which may have heating or cooling facilities, to control the ampule temperature within the range -50 to +200or.
A feature of the present invention is that the iodine ion beam (together with any neutrals present) induces a reaction on the surface of the bombarded material with the formation of relatively volatile iodide species, for example, indium iodides. This enhances the removal of otherwise involatile components such as elemental indium. The invention also provides a new solid source of material (elemental iodine) to produce the iodine ion beam. The source may comprise this solid dissolved in a carrier liquid. The iodine vapour pressure is conveniently controlled by varying the source temperature in the range -50 to +200 C by means of heating or refrigeration. The source provides vapour which is compatible with existing ion gun assemblies such as the Ion Tech saddle field ion gun.
Iodine has a higher atomic mass than species such as argon, which is conventionally used to form ion beams for use in etching. Therefore, under equivalent ion gun conditions, the iodine ion beam can produce less surface disorder in the bombarded solid due to the shorter range of iodine within the solid.
The invention will be described by way of example only with reference to the accompanying drawing,
Figure 1, which shows the apparatus for iodine ion beam etching.
As shown, apparatus for ion beam etching comprises a chamber 13 evacuated by a pump 14 to about 10 5bar. Inside the chamber 13 a sample 6 to be etched is mounted on a holder 7 and may be rotated and cooled during etching. An ion gun 15, e.g. one similar to Ion Tech B1 1W ion gun, is mounted to direct an ion beam 5 onto the sample.
The gun 15 is made of stainless steel or other relatively unreactive material. Cathodes 4 made of tantalum are connected to earth whilst anodes 16 are connected to a voltage supply 9. Ion current is monitored by an ammeter 10 measuring a rear beam 17 produced by the symmetrical gun.
A glass ampule 12 is mounted inside a heater/cooler coil 2 and connects via tubing 18 and a valve 3 to the ion gun 15. Both the tubing 18 and valve 3 are made of glass or PTFE to avoid reaction with vapours. Inside the ampule are small crystals of solid elemental iodine. The ampule 12 may be outside the chamber 13 as shown or inside. A second ion gun may be arranged inside the chamber to emit a second beam 8 and etch the underside of the sample 6.
In operation a sample 6, e.g. of InP 3mm diameter 50 Fm thick is placed on the holder 7 and the pump 14 operated to reduce the pressure to about 10-5mbar. The heater coil 2 is adjusted to control the ampule 12 within a range of 20##100C giving a suitable iodine vapour pressure. Iodine vapour is admitted into the gun 15 whilst a voltage around 1 to 10 Kvolts. is applied to the anode 16. A stream of iodine ions and neutrals impinges on the sample 6 and and sputter etches its surface at a typical rate of 0.1-10 Fm per minute. This is continued until the required sample thickness has been obtained. The sample may then be used as a specimen in a transmission electron microscope.
Reactive iodine ion beam etching as described above may be used to suppress surface disproportionation and metallic island formation for a range of Ill-V and Il-VI semiconductors, for example, indium phosphide, indium arsenide, indium antimonide, gallium arsenide, gallium phosphide cadmium telluride, cadmium mercury telluride, zinc sulphide, zinc selenide etc., together with ternary and quarternary alloys formed from these materials.
The iodine ion beam (together with neutrals) can be used for a range of processes related to the example of electron microscope sample thinning described above. Other processes include plasma etching of electronic device structures, surface cleaning prior to epitaxial layer growth by e.g. molecular beam deposition in ultra-high vacuum, sputter profiling for depth analysis of semi-conductors in conjunction with a technique such as Auger electron spectroscopy or secondary ion mass spectrometry, etc. For some processes the voltage used by the ion gun will be around 100 to 500 volts or more.
Claims (10)
1. A method of etching samples of semiconductor materials comprising the steps of mounting a sample in a vacuum chamber, and directing an ion beam at the sample, the ion beam being composed of iodine, or bromine.
2. The method of claim 1 wherein the substrate is indium phosphide, indium arsenide, indium antimonide, gallium arsenide, zinc sulphide, zinc selenide, cadmium telluride, cadmium mercury telluride or other Ill-V and Il-VI materials together with ternary and quaternary alloys formed from these materials.
3. Apparatus for etching samples of semiconductor materials comprising a vacuum chamber, a pump for maintaining a vacuum within the chamber, a holder inside the chamber for holding the samples, and means for providing an ion beam for directing ions onto the sample, such means comprising an ion beam gun and a source of iodine or bromine material to form ions.
4. The apparatus of claim 3 wherein the source of ion material is a solid or liquid source contained in an ampule connected to the ion gun via a valve.
5. The apparatus of claim 4 wherein the ampule is provided with means for controlling the temperature of the ion source material.
6. The apparatus of claim 3 and including a sample holder cooler.
7. The apparatus of claim 3 wherein the sample holder is movable within the chamber.
8. The apparatus of claim 3 and including a variable level voltage supply for the ion beam gun.
9. The apparatus of claim 3 and including a valve for controlling the rate of source material vapour into the chamber.
10. The apparatus of claim 3 constructed arranged and adapted to operate substantially as hereinbefore described with reference to the accompanying drawing.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB838319716A GB8319716D0 (en) | 1983-07-21 | 1983-07-21 | Reactive ion etching |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| GB8418364D0 GB8418364D0 (en) | 1984-08-22 |
| GB2145360A true GB2145360A (en) | 1985-03-27 |
| GB2145360B GB2145360B (en) | 1987-01-07 |
Family
ID=10546079
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB838319716A Pending GB8319716D0 (en) | 1983-07-21 | 1983-07-21 | Reactive ion etching |
| GB08418364A Expired GB2145360B (en) | 1983-07-21 | 1984-07-18 | Reactive ion etching |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB838319716A Pending GB8319716D0 (en) | 1983-07-21 | 1983-07-21 | Reactive ion etching |
Country Status (1)
| Country | Link |
|---|---|
| GB (2) | GB8319716D0 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2202236A (en) * | 1987-03-09 | 1988-09-21 | Philips Electronic Associated | Manufacture of electronic devices comprising cadmium mercury telluride involving vapour phase deposition |
| US5009743A (en) * | 1989-11-06 | 1991-04-23 | Gatan Incorporated | Chemically-assisted ion beam milling system for the preparation of transmission electron microscope specimens |
| CN1896315B (en) * | 2005-07-11 | 2010-05-12 | Tdk株式会社 | Ion beam etching method and ion beam etching apparatus |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1364735A (en) * | 1970-10-19 | 1974-08-29 | Western Electric Co | Method of selectively removing material by ion bombardment |
| GB1448825A (en) * | 1972-12-21 | 1976-09-08 | Atomic Energy Authority Uk | Inspection of metals for devects |
| GB1485928A (en) * | 1975-05-22 | 1977-09-14 | Ibm | Etching aluminium |
| GB1499847A (en) * | 1974-05-10 | 1978-02-01 | Western Electric Co | Selective removal of material by sputter etching |
| GB1585299A (en) * | 1976-12-30 | 1981-02-25 | Ibm | Forming patterned films |
| GB2081159A (en) * | 1980-07-11 | 1982-02-17 | Philips Nv | Method of manufacturing a semiconductor device |
-
1983
- 1983-07-21 GB GB838319716A patent/GB8319716D0/en active Pending
-
1984
- 1984-07-18 GB GB08418364A patent/GB2145360B/en not_active Expired
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1364735A (en) * | 1970-10-19 | 1974-08-29 | Western Electric Co | Method of selectively removing material by ion bombardment |
| GB1448825A (en) * | 1972-12-21 | 1976-09-08 | Atomic Energy Authority Uk | Inspection of metals for devects |
| GB1499847A (en) * | 1974-05-10 | 1978-02-01 | Western Electric Co | Selective removal of material by sputter etching |
| GB1485928A (en) * | 1975-05-22 | 1977-09-14 | Ibm | Etching aluminium |
| GB1585299A (en) * | 1976-12-30 | 1981-02-25 | Ibm | Forming patterned films |
| GB2081159A (en) * | 1980-07-11 | 1982-02-17 | Philips Nv | Method of manufacturing a semiconductor device |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2202236A (en) * | 1987-03-09 | 1988-09-21 | Philips Electronic Associated | Manufacture of electronic devices comprising cadmium mercury telluride involving vapour phase deposition |
| GB2202236B (en) * | 1987-03-09 | 1991-04-24 | Philips Electronic Associated | Manufacture of electronic devices comprising cadmium mercury telluride |
| US5009743A (en) * | 1989-11-06 | 1991-04-23 | Gatan Incorporated | Chemically-assisted ion beam milling system for the preparation of transmission electron microscope specimens |
| CN1896315B (en) * | 2005-07-11 | 2010-05-12 | Tdk株式会社 | Ion beam etching method and ion beam etching apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| GB2145360B (en) | 1987-01-07 |
| GB8319716D0 (en) | 1983-08-24 |
| GB8418364D0 (en) | 1984-08-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5374318A (en) | Process for the deposition of diamond films using low energy, mass-selected ion beam deposition | |
| Chew et al. | The preparation of transmission electron microscope specimens from compound semiconductors by ion milling | |
| US5009743A (en) | Chemically-assisted ion beam milling system for the preparation of transmission electron microscope specimens | |
| US4336277A (en) | Transparent electrical conducting films by activated reactive evaporation | |
| Yagi et al. | Germanium and silicon film growth by low-energy ion beam deposition | |
| US8742346B1 (en) | Sputter removal of material from microscopy samples with RF generated plasma | |
| Chew et al. | Iodine ion milling of indium‐containing compound semiconductors | |
| US5145554A (en) | Method of anisotropic dry etching of thin film semiconductors | |
| US5646474A (en) | Boron nitride cold cathode | |
| US6388366B1 (en) | Carbon nitride cold cathode | |
| Bensaoula et al. | Direct‐current‐magnetron deposition of molybdenum and tungsten with rf‐substrate bias | |
| US5563412A (en) | Method of making specimens for an electron microscope | |
| GB2145360A (en) | Reactive ion etching | |
| US6811611B2 (en) | Esrf source for ion plating epitaxial deposition | |
| Slusser et al. | Sources of surface contamination affecting electrical characteristics of semiconductors | |
| Ploog | Surface studies during molecular beam epitaxy of gallium arsenide | |
| Matsuoka et al. | Ion beam epitaxy of silicon films in an ultrahigh vacuum using a sputtering‐type metal ion source | |
| Aoki et al. | In situ substrate surface cleaning by low‐energy ion bombardment for high quality thin film formation | |
| US4508590A (en) | Method for the deposition of high-quality crystal epitaxial films of iron | |
| Weissmantel et al. | Ion beam techniques for thin and thick film deposition | |
| Zuber et al. | Work function and loss spectra of beryllium layers adsorbed on tungsten single crystals with (110) and (100) orientations | |
| Wehner et al. | Substituting low‐energy (< 30 eV) ion bombardment for elevated temperature in silicon epitaxy | |
| US5264394A (en) | Method for producing high quality oxide films on substrates | |
| Barna et al. | Simple method for the preparation of InP based samples for TEM investigation | |
| JPH09129592A (en) | Method of etching substrate by chemical beam |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 732 | Registration of transactions, instruments or events in the register (sect. 32/1977) | ||
| PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 20000718 |