GB2131228B - Dual-gate field-effect transistor - Google Patents
Dual-gate field-effect transistorInfo
- Publication number
- GB2131228B GB2131228B GB08331225A GB8331225A GB2131228B GB 2131228 B GB2131228 B GB 2131228B GB 08331225 A GB08331225 A GB 08331225A GB 8331225 A GB8331225 A GB 8331225A GB 2131228 B GB2131228 B GB 2131228B
- Authority
- GB
- United Kingdom
- Prior art keywords
- dual
- effect transistor
- gate field
- gate
- field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005669 field effect Effects 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/15—Ceramic or glass substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7831—Field effect transistors with field effect produced by an insulated gate with multiple gate structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
- H01L29/8124—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate with multiple gate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/818—Bonding techniques
- H01L2224/81801—Soldering or alloying
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01023—Vanadium [V]
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- H01L2924/01029—Copper [Cu]
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/1026—Compound semiconductors
- H01L2924/1032—III-V
- H01L2924/10329—Gallium arsenide [GaAs]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12033—Gunn diode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Junction Field-Effect Transistors (AREA)
- Wire Bonding (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US44472582A | 1982-11-26 | 1982-11-26 |
Publications (3)
Publication Number | Publication Date |
---|---|
GB8331225D0 GB8331225D0 (en) | 1983-12-29 |
GB2131228A GB2131228A (en) | 1984-06-13 |
GB2131228B true GB2131228B (en) | 1986-06-04 |
Family
ID=23766084
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB08331225A Expired GB2131228B (en) | 1982-11-26 | 1983-11-23 | Dual-gate field-effect transistor |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPS59108336A (en) |
CA (1) | CA1200326A (en) |
DE (1) | DE3343030A1 (en) |
FR (1) | FR2536910A1 (en) |
GB (1) | GB2131228B (en) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2137807B (en) * | 1983-04-05 | 1987-08-12 | Plessey Co Plc | A semiconductor component and method of manufacture |
JPH0425031A (en) * | 1990-05-16 | 1992-01-28 | Nec Corp | High-output monolithic microwave integrated circuit |
WO1994015361A1 (en) * | 1992-12-22 | 1994-07-07 | Hughes Aircraft Company | Fet chip with heat-extracting bridge |
US5554881A (en) * | 1993-12-17 | 1996-09-10 | Nippondenso Co., Ltd. | Constitution of an electrode arrangement in a semiconductor element |
US7299459B1 (en) | 2000-01-19 | 2007-11-20 | Sabio Labs, Inc. | Parser for signomial and geometric programs |
US6802050B2 (en) * | 2002-04-07 | 2004-10-05 | Barcelona Design, Inc. | Efficient layout strategy for automated design layout tools |
WO2003088102A2 (en) | 2002-04-10 | 2003-10-23 | Barcelona Design, Inc. | Method and apparatus for efficient semiconductor process evaluation |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1543363A (en) * | 1975-02-26 | 1979-04-04 | Nippon Electric Co | Dual-gate schottky barrier gate field effect transistors |
US3993515A (en) * | 1975-03-31 | 1976-11-23 | Rca Corporation | Method of forming raised electrical contacts on a semiconductor device |
US4104673A (en) * | 1977-02-07 | 1978-08-01 | Westinghouse Electric Corp. | Field effect pentode transistor |
US4161740A (en) * | 1977-11-07 | 1979-07-17 | Microwave Semiconductor Corp. | High frequency power transistor having reduced interconnection inductance and thermal resistance |
FR2455785A1 (en) * | 1979-05-02 | 1980-11-28 | Thomson Csf | ELECTRICAL INSULATOR SUPPORT, WITH LOW THERMAL RESISTANCE, AND BASE OR HOUSING FOR POWER COMPONENT, INCLUDING SUCH SUPPORT |
-
1983
- 1983-10-28 CA CA000439975A patent/CA1200326A/en not_active Expired
- 1983-11-23 GB GB08331225A patent/GB2131228B/en not_active Expired
- 1983-11-25 FR FR8318879A patent/FR2536910A1/en not_active Withdrawn
- 1983-11-25 JP JP58223051A patent/JPS59108336A/en active Pending
- 1983-11-28 DE DE19833343030 patent/DE3343030A1/en not_active Ceased
Also Published As
Publication number | Publication date |
---|---|
CA1200326A (en) | 1986-02-04 |
DE3343030A1 (en) | 1984-05-30 |
JPS59108336A (en) | 1984-06-22 |
FR2536910A1 (en) | 1984-06-01 |
GB2131228A (en) | 1984-06-13 |
GB8331225D0 (en) | 1983-12-29 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PCNP | Patent ceased through non-payment of renewal fee |