GB2131228B - Dual-gate field-effect transistor - Google Patents

Dual-gate field-effect transistor

Info

Publication number
GB2131228B
GB2131228B GB08331225A GB8331225A GB2131228B GB 2131228 B GB2131228 B GB 2131228B GB 08331225 A GB08331225 A GB 08331225A GB 8331225 A GB8331225 A GB 8331225A GB 2131228 B GB2131228 B GB 2131228B
Authority
GB
United Kingdom
Prior art keywords
dual
effect transistor
gate field
gate
field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB08331225A
Other versions
GB2131228A (en
GB8331225D0 (en
Inventor
Franco Nicola Sechi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of GB8331225D0 publication Critical patent/GB8331225D0/en
Publication of GB2131228A publication Critical patent/GB2131228A/en
Application granted granted Critical
Publication of GB2131228B publication Critical patent/GB2131228B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/15—Ceramic or glass substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7831—Field effect transistors with field effect produced by an insulated gate with multiple gate structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
    • H01L29/8124—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate with multiple gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/818—Bonding techniques
    • H01L2224/81801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01023—Vanadium [V]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/1026—Compound semiconductors
    • H01L2924/1032—III-V
    • H01L2924/10329—Gallium arsenide [GaAs]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12033—Gunn diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Wire Bonding (AREA)
GB08331225A 1982-11-26 1983-11-23 Dual-gate field-effect transistor Expired GB2131228B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US44472582A 1982-11-26 1982-11-26

Publications (3)

Publication Number Publication Date
GB8331225D0 GB8331225D0 (en) 1983-12-29
GB2131228A GB2131228A (en) 1984-06-13
GB2131228B true GB2131228B (en) 1986-06-04

Family

ID=23766084

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08331225A Expired GB2131228B (en) 1982-11-26 1983-11-23 Dual-gate field-effect transistor

Country Status (5)

Country Link
JP (1) JPS59108336A (en)
CA (1) CA1200326A (en)
DE (1) DE3343030A1 (en)
FR (1) FR2536910A1 (en)
GB (1) GB2131228B (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2137807B (en) * 1983-04-05 1987-08-12 Plessey Co Plc A semiconductor component and method of manufacture
JPH0425031A (en) * 1990-05-16 1992-01-28 Nec Corp High-output monolithic microwave integrated circuit
AU668463B2 (en) * 1992-12-22 1996-05-02 Hughes Aircraft Company Fet chip with heat-extracting bridge
DE4444808B4 (en) * 1993-12-17 2005-12-15 Denso Corp., Kariya Semiconductor device
US7299459B1 (en) 2000-01-19 2007-11-20 Sabio Labs, Inc. Parser for signomial and geometric programs
US6802050B2 (en) * 2002-04-07 2004-10-05 Barcelona Design, Inc. Efficient layout strategy for automated design layout tools
US7093205B2 (en) 2002-04-10 2006-08-15 Barcelona Design, Inc. Method and apparatus for efficient semiconductor process evaluation

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2302592A1 (en) * 1975-02-26 1976-09-24 Nippon Electric Co DOUBLE DOOR SCHOTTKY BARRIER FIELD EFFECT TRANSISTOR
US3993515A (en) * 1975-03-31 1976-11-23 Rca Corporation Method of forming raised electrical contacts on a semiconductor device
US4104673A (en) * 1977-02-07 1978-08-01 Westinghouse Electric Corp. Field effect pentode transistor
US4161740A (en) * 1977-11-07 1979-07-17 Microwave Semiconductor Corp. High frequency power transistor having reduced interconnection inductance and thermal resistance
FR2455785A1 (en) * 1979-05-02 1980-11-28 Thomson Csf ELECTRICAL INSULATOR SUPPORT, WITH LOW THERMAL RESISTANCE, AND BASE OR HOUSING FOR POWER COMPONENT, INCLUDING SUCH SUPPORT

Also Published As

Publication number Publication date
GB2131228A (en) 1984-06-13
GB8331225D0 (en) 1983-12-29
DE3343030A1 (en) 1984-05-30
JPS59108336A (en) 1984-06-22
CA1200326A (en) 1986-02-04
FR2536910A1 (en) 1984-06-01

Similar Documents

Publication Publication Date Title
GB8333134D0 (en) Field-effect transistor circuits
DE3069973D1 (en) Insulated-gate field-effect transistor
DE3275887D1 (en) Insulated-gate field-effect transistors
GB2077493B (en) Mos transistor
DE3276723D1 (en) Offset-gate chemical-sensitive field-effect transistors (og-chemfets)
GB8309750D0 (en) Thin film mos transistor
JPS57147281A (en) Mis field effect transistor
EP0239019A3 (en) Field-effect transistor devices
DE3176252D1 (en) Field effect transistor
EP0091831A3 (en) Mobility-modulation field effect transistor
EP0239368A3 (en) Field-effect transistor
GB2077494B (en) Mos transistor
JPS54131884A (en) Field effect transistor having narrow channel
DE3367702D1 (en) High speed field-effect transistor employing heterojunction
JPS57104268A (en) Field effect transistor
GB2085656B (en) Field effect transistor
JPS56131961A (en) Mos fet device
DE3462381D1 (en) Enhancement-mode field-effect transistor
DE3380243D1 (en) Insulated-gate field-effect transistors
GB2131228B (en) Dual-gate field-effect transistor
JPS56147477A (en) Semiconductor transistor
JPS54121682A (en) Dual fet transistor
EP0091710A3 (en) Transistors
DE3175010D1 (en) Field effect transistor
GB2128026B (en) Transistors

Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee