GB2129833B - Method and apparatus for depositing coatings in a glow discharge - Google Patents
Method and apparatus for depositing coatings in a glow dischargeInfo
- Publication number
- GB2129833B GB2129833B GB08327061A GB8327061A GB2129833B GB 2129833 B GB2129833 B GB 2129833B GB 08327061 A GB08327061 A GB 08327061A GB 8327061 A GB8327061 A GB 8327061A GB 2129833 B GB2129833 B GB 2129833B
- Authority
- GB
- United Kingdom
- Prior art keywords
- glow discharge
- depositing coatings
- coatings
- depositing
- glow
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/12—Optical coatings produced by application to, or surface treatment of, optical elements by surface treatment, e.g. by irradiation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
- C23C16/029—Graded interfaces
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/32—Carbides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/32—Carbides
- C23C16/325—Silicon carbide
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Surface Treatment Of Optical Elements (AREA)
- Carbon And Carbon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB8229124 | 1982-10-12 |
Publications (3)
Publication Number | Publication Date |
---|---|
GB8327061D0 GB8327061D0 (en) | 1983-11-09 |
GB2129833A GB2129833A (en) | 1984-05-23 |
GB2129833B true GB2129833B (en) | 1987-09-16 |
Family
ID=10533549
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB08327061A Expired GB2129833B (en) | 1982-10-12 | 1983-10-10 | Method and apparatus for depositing coatings in a glow discharge |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP0106637B1 (ja) |
JP (1) | JPS59214003A (ja) |
DE (1) | DE3375700D1 (ja) |
GB (1) | GB2129833B (ja) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6784033B1 (en) | 1984-02-15 | 2004-08-31 | Semiconductor Energy Laboratory Co., Ltd. | Method for the manufacture of an insulated gate field effect semiconductor device |
US5780313A (en) | 1985-02-14 | 1998-07-14 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating semiconductor device |
GB2291888B (en) * | 1984-06-08 | 1996-06-26 | Barr & Stroud Ltd | Optical coating |
GB2162207B (en) * | 1984-07-26 | 1989-05-10 | Japan Res Dev Corp | Semiconductor crystal growth apparatus |
GB2175016B (en) * | 1985-05-11 | 1990-01-24 | Barr & Stroud Ltd | Optical coating |
EP0209972A1 (en) * | 1985-06-05 | 1987-01-28 | Plessey Overseas Limited | Methods of depositing germanium hydrogen carbide |
EP0210724B1 (en) * | 1985-06-05 | 1989-08-02 | Plessey Overseas Limited | Methods of depositing germanium carbide |
JPH067202B2 (ja) * | 1985-08-03 | 1994-01-26 | 日本合成ゴム株式会社 | 光学製品の製造方法 |
KR910003169B1 (ko) * | 1985-11-12 | 1991-05-20 | 가부시끼가이샤 한도다이 에네르기 겐뀨소 | 반도체 장치 제조 방법 및 장치 |
GB2185758B (en) * | 1985-12-28 | 1990-09-05 | Canon Kk | Method for forming deposited film |
GB8629496D0 (en) * | 1986-12-10 | 1987-01-21 | British Petroleum Co Plc | Silicon carbide |
GB8713922D0 (en) * | 1987-06-15 | 1994-06-22 | Secr Defence | Infra red transparent windows |
GB8801366D0 (en) * | 1988-01-21 | 1988-02-17 | Secr Defence | Infra red transparent materials |
DE3832692A1 (de) * | 1988-09-27 | 1990-03-29 | Leybold Ag | Dichtungselement mit einem absperrkoerper aus einem metallischen oder nichtmetallischen werkstoff und verfahren zum auftragen von hartstoffschichten auf den absperrkoerper |
IT1227877B (it) * | 1988-11-25 | 1991-05-14 | Eniricerche S P A Agip S P A | Procedimento per la deposizione via plasma di strati multipli dimate riale amorfo a composizione variabile |
US7122844B2 (en) * | 2002-05-13 | 2006-10-17 | Cree, Inc. | Susceptor for MOCVD reactor |
US8366830B2 (en) | 2003-03-04 | 2013-02-05 | Cree, Inc. | Susceptor apparatus for inverted type MOCVD reactor |
CN106104311B (zh) * | 2014-03-13 | 2018-04-10 | 富士胶片株式会社 | 光学组件、红外线照相机及光学组件的制造方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3424661A (en) * | 1966-09-01 | 1969-01-28 | Bell Telephone Labor Inc | Method of conducting chemical reactions in a glow discharge |
US4068037A (en) * | 1976-01-02 | 1978-01-10 | Avco Corporation | Silicon carbide filaments and method |
JPS5353263A (en) * | 1976-10-26 | 1978-05-15 | Toshiba Corp | Manufacture of semiconductor element |
GB2047877A (en) * | 1979-03-26 | 1980-12-03 | Secr Defence | Solar heating panels |
DE3064976D1 (en) * | 1979-11-20 | 1983-10-27 | Nat Res Dev | Infra red reflectors |
US4363828A (en) * | 1979-12-12 | 1982-12-14 | International Business Machines Corp. | Method for depositing silicon films and related materials by a glow discharge in a disiland or higher order silane gas |
GB2069008B (en) * | 1980-01-16 | 1984-09-12 | Secr Defence | Coating in a glow discharge |
US4702960A (en) * | 1980-07-30 | 1987-10-27 | Avco Corporation | Surface treatment for carbon and product |
GB2082562B (en) * | 1980-08-21 | 1983-12-14 | Secr Defence | Coating germanium of silicon with carbon |
GB2083841B (en) * | 1980-08-21 | 1985-03-13 | Secr Defence | Glow discharge coating |
EP0048542B2 (en) * | 1980-08-21 | 1993-03-31 | National Research Development Corporation | Coating infra red transparent semiconductor material |
-
1983
- 1983-10-06 DE DE8383306057T patent/DE3375700D1/de not_active Expired
- 1983-10-06 EP EP83306057A patent/EP0106637B1/en not_active Expired
- 1983-10-10 GB GB08327061A patent/GB2129833B/en not_active Expired
- 1983-10-12 JP JP58189414A patent/JPS59214003A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
GB2129833A (en) | 1984-05-23 |
JPS59214003A (ja) | 1984-12-03 |
EP0106637B1 (en) | 1988-02-17 |
DE3375700D1 (en) | 1988-03-24 |
GB8327061D0 (en) | 1983-11-09 |
JPH0430561B2 (ja) | 1992-05-22 |
EP0106637A1 (en) | 1984-04-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
732 | Registration of transactions, instruments or events in the register (sect. 32/1977) | ||
732 | Registration of transactions, instruments or events in the register (sect. 32/1977) | ||
732E | Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977) | ||
732E | Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977) | ||
PE20 | Patent expired after termination of 20 years |
Effective date: 20031009 |