GB2119817A - Vacuum deposition apparatus - Google Patents
Vacuum deposition apparatus Download PDFInfo
- Publication number
- GB2119817A GB2119817A GB08310932A GB8310932A GB2119817A GB 2119817 A GB2119817 A GB 2119817A GB 08310932 A GB08310932 A GB 08310932A GB 8310932 A GB8310932 A GB 8310932A GB 2119817 A GB2119817 A GB 2119817A
- Authority
- GB
- United Kingdom
- Prior art keywords
- substrate
- sputtering
- cathode
- magnetic field
- coated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/351—Sputtering by application of a magnetic field, e.g. magnetron sputtering using a magnetic field in close vicinity to the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The apparatus including a cathode 4 an anode 8 associated with the substrate 6 to be coated and permanent magnet means 10 whose lines of force are directed substantially parallel to the surface of the substrate 6, at least closely adjacent to that surface, and whose strength is such as to divert high-energy electrons away from the surface in order substantially to prevent them bombarding that surface. <IMAGE>
Description
SPECIFICATION
Vacuum deposition apparatus
This invention relates to vacuum deposition apparatus and in particular, but not exclusively, to sputtering apparatus.
In a sputtering apparatus the piasma usually contains, in those parts of the sputtering chamber which are remote from the electrodes, unwanted ions of the sputtering gas and low-energy electrons.
In the gap between the electrodes, however, the plasma contains high-energy ions which bombard the target, energetic neutral particles of the material to be sputtered which will coat a surface of a substrate, high-energy electrons which hit the substrate, and photons which arise from the recombinations óf ions and electrons.
The bombardment of the substrate, during sputtering, by high-energy electrons can have a deleterious effect on the sputtered film, particularly when the material being sputtered is a dielectric material, e.g. silicon dioxide.
It is an object of this invention to provide an improved vacuum deposition apparatus.
According to this invention a vacuum deposition apparatus includes a cathode, an anode associated with the substrate to be coated, and means providing a magnetic field whose lines of force are directed substantially parallel to the surface of the substrate to be coated and are at least closely adjacent to that surface and whose strength is such as to divert high-energy electrons away from, and substantially prevent them bombarding, the surface.
The vacuum deposition apparatus may be a sputtering apparatus.
One embodiment of a sputtering apparatus in accordance with one embodiment of the invention, given by way of example, is illustrated in the accompanying drawings of which
Figure 1 is a vertical sectional view of the apparatus, and Figure 2 is a section taken along the line 11II of Figure 1.
Referring to the drawings the illustrative apparatus includes a chamber 1 which can be connected to a suitable pump (not shown) for evacuating the chamber.
Near to one end of the chamber there are disposed an earthed metal shield 2, a backing plate 3 and a cathode 4. The cathode 4 is connected to a source of high-power radiofrequency signals (not shown) by way of the backing plate.
Within another part of the chamber there are disposed a worktable 5 which supports a substrate 6 having a surface to be coated. The worktable 5 is within a rectangular recess 7 in an anode structure 8. The anode structure 8 is connected to the earthed base plate of the chamber 1 by means of a connector flange 9. The anode structure of this embodiment of the
invention is hollow and water cooled. To that end, the apparatus includes a water inlet pipe 11 and a water outlet pipe 12.
Also within the rectangular recess there are permanent magnets 10 which provide a uniform magnetic field. The lines of force of the magnetic field extend substantially parallel to the surface of the substrate 6 to be coated, say in the direction B shown in Figure 1, and extend someway beyond the substrate 6 towards but not as far as the region adjacent the cathode 4. As mentioned later, the field strength is of a certain value.
In operation the anode structure 8 is at earth potential and will be kept water cooled. A highpower radio-frequency signal is applied to the cathode 4. The application of that signal ionises a sputtering gas which fills the chamber at low pressure; the ions produced bombard the cathode 4 and cause sputtering.
The earthed metal shield 2 prohibits the sputtering of material from the backing plate 3.
The neutral particles of material to be sputtered will coat the surface of the substrate 6.
Any high-energy electrons which enter the region close to the surface to be coated will come under the influence of the magnetic field of the permanent magnets 10. The magnetic field is of such a strength that the trajectory of the electrons will be changed, causing them to move along the lines of force, which extend substantially parallel to the surface to be coated, in a helical trajectory away from the surface of the substrate to be coated. The electrons will, eventually, bombard the earthed anode structure instead of the substrate.
The strength of the magnetic field depends on the energy of the electrons and can readily be computed from the equation:
mV
By
er where
m is the electronic mass
e is the electronic charge
V is the electronic velocity and
r is the radius of the helical trajectories of
electrons along the magnetic field direction.
The magnetic field produced by the permanent
magnets does not extend to the region adjacent the cathode and has a negligible effect on the
heavier ions which bombard the cathode and which cause sputtering.
In addition to the magnetic field produced in the region of the substrate (in the above
described embodiment, produced by the
permanent magnets 10), another magnetic field,
known in the art of cathode sputtering, may be
generated by other magnetic-fieíd-producing means in the region of the cathode to increase the
rate of sputtering.
Claims
1. A vacuum deposition apparatus including a
**WARNING** end of DESC field may overlap start of CLMS **.
Claims (2)
1. A vacuum deposition apparatus including a cathode, an anode associated with the substrate to be coated, and means providing a magnetic field whose lines of force are directed substantially parallel to the surface of the substrate to be coated, are at least closely adjacent to that surface and are of such strength as substantially to direct high-energy electrons away from the surface.
2. A vacuum deposition apparatus substantially as hereinbefore described and as illustrated in the accompanying drawings.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB08310932A GB2119817A (en) | 1982-05-12 | 1983-04-22 | Vacuum deposition apparatus |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB8213847 | 1982-05-12 | ||
GB08310932A GB2119817A (en) | 1982-05-12 | 1983-04-22 | Vacuum deposition apparatus |
Publications (2)
Publication Number | Publication Date |
---|---|
GB8310932D0 GB8310932D0 (en) | 1983-05-25 |
GB2119817A true GB2119817A (en) | 1983-11-23 |
Family
ID=26282819
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB08310932A Withdrawn GB2119817A (en) | 1982-05-12 | 1983-04-22 | Vacuum deposition apparatus |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB2119817A (en) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1160813A (en) * | 1966-07-14 | 1969-08-06 | Ibm | Ferromagnetic Films |
GB1358411A (en) * | 1972-11-02 | 1974-07-03 | Electrical Res Ass | Sputtering |
GB1462241A (en) * | 1973-01-12 | 1977-01-19 | Coulter Information Systems | Thin film deposition apparatus using segmented target means |
GB1484384A (en) * | 1974-10-23 | 1977-09-01 | Nordiko Ltd | Sputtering method and apparatus |
US4046660A (en) * | 1975-12-29 | 1977-09-06 | Bell Telephone Laboratories, Incorporated | Sputter coating with charged particle flux control |
-
1983
- 1983-04-22 GB GB08310932A patent/GB2119817A/en not_active Withdrawn
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1160813A (en) * | 1966-07-14 | 1969-08-06 | Ibm | Ferromagnetic Films |
GB1358411A (en) * | 1972-11-02 | 1974-07-03 | Electrical Res Ass | Sputtering |
GB1462241A (en) * | 1973-01-12 | 1977-01-19 | Coulter Information Systems | Thin film deposition apparatus using segmented target means |
GB1484384A (en) * | 1974-10-23 | 1977-09-01 | Nordiko Ltd | Sputtering method and apparatus |
US4046660A (en) * | 1975-12-29 | 1977-09-06 | Bell Telephone Laboratories, Incorporated | Sputter coating with charged particle flux control |
Also Published As
Publication number | Publication date |
---|---|
GB8310932D0 (en) | 1983-05-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |