GB2108756B - Forming a pattern of a thin film lustre - Google Patents

Forming a pattern of a thin film lustre

Info

Publication number
GB2108756B
GB2108756B GB08226102A GB8226102A GB2108756B GB 2108756 B GB2108756 B GB 2108756B GB 08226102 A GB08226102 A GB 08226102A GB 8226102 A GB8226102 A GB 8226102A GB 2108756 B GB2108756 B GB 2108756B
Authority
GB
United Kingdom
Prior art keywords
lustre
pattern
forming
thin film
thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB08226102A
Other versions
GB2108756A (en
Inventor
Yutaka Kamata
Tsunehisa Ueno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Publication of GB2108756A publication Critical patent/GB2108756A/en
Application granted granted Critical
Publication of GB2108756B publication Critical patent/GB2108756B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
GB08226102A 1981-09-14 1982-09-14 Forming a pattern of a thin film lustre Expired GB2108756B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14380881A JPS5846635A (en) 1981-09-14 1981-09-14 Formation of semiconductor element pattern

Publications (2)

Publication Number Publication Date
GB2108756A GB2108756A (en) 1983-05-18
GB2108756B true GB2108756B (en) 1985-04-24

Family

ID=15347448

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08226102A Expired GB2108756B (en) 1981-09-14 1982-09-14 Forming a pattern of a thin film lustre

Country Status (3)

Country Link
JP (1) JPS5846635A (en)
DE (1) DE3234066A1 (en)
GB (1) GB2108756B (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS596540A (en) * 1982-07-05 1984-01-13 Toshiba Corp Manufacture of semiconductor device
JPH0736402B2 (en) * 1985-05-20 1995-04-19 ヤマハ株式会社 Metal pattern forming method
JPH01241125A (en) * 1988-03-23 1989-09-26 Sony Corp Manufacture of semiconductor device
EP0379604B1 (en) * 1989-01-23 1995-05-31 Siemens Aktiengesellschaft Process for fabrication of a silicon nitride layer as an anti-reflection layer in photolithography processes during the manufacture of high density semiconductor circuits
DE3901864A1 (en) * 1989-01-23 1990-07-26 Siemens Ag Process for reducing variations in structure size caused by interference during the structuring of a photoresist film by monochromatic exposure
JP2791525B2 (en) * 1992-04-16 1998-08-27 三菱電機株式会社 Method of selecting antireflection film and antireflection film selected by the method
US5378659A (en) * 1993-07-06 1995-01-03 Motorola Inc. Method and structure for forming an integrated circuit pattern on a semiconductor substrate
SG89410A1 (en) * 2000-07-31 2002-06-18 Hitachi Ulsi Sys Co Ltd Manufacturing method of semiconductor integrated circuit device
DE10138909A1 (en) * 2001-08-08 2003-02-27 Infineon Technologies Ag Silicon-containing layer manufacture using photomask, forms silicon-containing layer on substrate by chemical vapour deposition and uses excess silicon to reduce light used for exposing photomask

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3884698A (en) * 1972-08-23 1975-05-20 Hewlett Packard Co Method for achieving uniform exposure in a photosensitive material on a semiconductor wafer
JPS5593225A (en) * 1979-01-10 1980-07-15 Hitachi Ltd Forming method of minute pattern
JPS5680130A (en) * 1979-12-05 1981-07-01 Toshiba Corp Manufacture of semiconductor device

Also Published As

Publication number Publication date
DE3234066A1 (en) 1983-03-31
JPS5846635A (en) 1983-03-18
GB2108756A (en) 1983-05-18

Similar Documents

Publication Publication Date Title
JPS57121064A (en) Formation of surface-even thin film
JPS5456504A (en) Method of forming pattern thin film
GB2027054B (en) Electroplating of selected areas of a surface
DE2965661D1 (en) Method of making thick film fine patterns
GB8630844D0 (en) Forming deposited film
GB2015036A (en) Forming a pattern of material on a substrate
GB8524348D0 (en) Forming coating film
EP0153854A3 (en) Process for forming a pattern film
GB2108756B (en) Forming a pattern of a thin film lustre
GB8518834D0 (en) Forming moncrystalline thin film
JPS57156032A (en) Method of forming thin film
DE3278328D1 (en) Masking portions of a substrate
JPS5591843A (en) Method of forming thin film mutual connecting pattern
GB8723519D0 (en) Forming pattern of two-layer metal film
JPS5729455A (en) Manufacture of decorative film
DE3273273D1 (en) Method of forming pattern
JPS5739598A (en) Thick film fine pattern
EP0042704A3 (en) Photosensitive composition and method of forming a pattern employing the composition
GB2091742B (en) Production of a peptide
JPS553679A (en) Method of forming thick film fine pattern
JPS5737898A (en) Thick film fine pattern
GB2118459B (en) Coating of a surface
JPS57173994A (en) Method of forming pattern
JPS5541729A (en) Method of forming thick film pattern
JPS5694690A (en) Method of manufacturing thick film fine pattern

Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19980914