GB2094060A - Light emitting and receiving device - Google Patents
Light emitting and receiving device Download PDFInfo
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- GB2094060A GB2094060A GB8205246A GB8205246A GB2094060A GB 2094060 A GB2094060 A GB 2094060A GB 8205246 A GB8205246 A GB 8205246A GB 8205246 A GB8205246 A GB 8205246A GB 2094060 A GB2094060 A GB 2094060A
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- light
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- 230000003287 optical effect Effects 0.000 claims abstract description 26
- 239000004065 semiconductor Substances 0.000 claims abstract description 16
- 238000001228 spectrum Methods 0.000 claims description 23
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 15
- 238000010276 construction Methods 0.000 claims description 13
- 238000009826 distribution Methods 0.000 claims description 12
- 230000035945 sensitivity Effects 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 9
- 238000009792 diffusion process Methods 0.000 abstract description 4
- 239000013307 optical fiber Substances 0.000 description 35
- 230000005540 biological transmission Effects 0.000 description 7
- 230000008020 evaporation Effects 0.000 description 6
- 238000001704 evaporation Methods 0.000 description 6
- 125000005842 heteroatom Chemical group 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 230000006854 communication Effects 0.000 description 5
- 238000004891 communication Methods 0.000 description 5
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 239000000835 fiber Substances 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 230000007175 bidirectional communication Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000002457 bidirectional effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4246—Bidirectionally operating package structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/125—Composite devices with photosensitive elements and electroluminescent elements within one single body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/14—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices
- H01L31/147—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
- H01L31/153—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers formed in, or on, a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
- H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
- H01L31/173—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers formed in, or on, a common substrate
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/25—Arrangements specific to fibre transmission
- H04B10/2589—Bidirectional transmission
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Composite Materials (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- Light Receiving Elements (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Abstract
At least one set of light emitting element, converting an electric signal into an optical signal, and light receiving element, converting an optical signal into an electric signal, is integrated into one chip of semiconductor device. The light emission or reception function is performed by a p-type layer 4 sandwiched between n layers 3 and 5. An annular groove 14 separates the central light emitting region from the outer light receiving region. The former includes a p-type diffusion layer 8 so that the region within the groove is a light emitting diode and the region outside the groove a phototransistor. <IMAGE>
Description
SPECIFICATION
Light emitting and receiving device
Background of the invention
This invention relates to a light emitting and receiving device constituted by semiconductors capable of performing both operations for conversion from an electric signal to an optical signal and from an optical signal to an electric signal.
A well-known light emitting diode has been generally used in a wide circle as the light emitting element consisting of semiconductor for the conversion of an electric signal into an optical signal.
While a well-known photodiode or phototransistor has been generally used in a wide circle as the light receiving element consisting of semiconductor for the conversion of an optical signal into an electric signal.
However, both of the light emitting element and the light receiving element have never been integrated into a chip of semiconductor device in the past.
Integration of the light emitting element and the light receiving element into a chip of semiconductor device enables the elimination of conventional problems, for instance, in a circle of their application as described in the following.
In case of constituting a bidirectional communication system with a single optical fiber, each of the transmitting-receiving devices is necessary to provide a light emitting elementforfeeding an optical signal to the optical fiber and a light receiving element for receiving the optical signal transmitted in the optical fiber. Since the light emitting element and the light receiving element are of respectively independent device, conventionally the both elements have been almost impossible to be optically coupled in good efficiency directly to an end face of an optical fiber due to the area of the end face of the optical fiber and dimensions of the both elements.Therefore, practically the end part of an optical fiber is divided through a dividericoupler into two optical fibers at the light emitting side and the light receiving side to couple both the light emitting element to the end face of the optical fiber at the light emitting side and the light receiving element to the end face of the optical fiber at the light receiving side. However, in this constitution, there is provided such a significantly disadvantageous point that a large amount of propagation loss is caused by the divider/coupler interposed in an optical transmission passage. The above loss comprises not only connection loss of the divider/coupler but those essentially inevitable caused by dividing light in the main line optical fiber into two optical fibers.
To eliminate the above described problematical points, the following method has been usually proposed.
The both light emitting diode and photodiode, which are principly constructional elements of similar P-N junction, can perform conversions from electricity to light and from light to electricity. Utilization of the above mentioned enables the constitution of a semidouble optical communication system by coupling a light emitting diode or photodiode to the end face of a single optical fiber and allowing this element of diode to function as the light emitting element at the time of transmission simultaneously as the light receiving element at the time of reception. However, those designed as a light emitting diode and designed as a photodiode, even though they are the elements of the same P-N junction construction, are largely different from each other in their concrete element constitution.In the above reason, it is almost impossible to obtain a single P-N junction element capable of satisfying the both luminous efficiency and light receiving sensitivity required in the above described system. Accordingly, in case of applying a light emitting diode as the element also used for light reception, its light receiving sensitivity is remarkably decreased and must be complemented by electrical amplification in a rear stage, resulting in the system with lower performance of noise resistance.
The above described problematical point in the past can be also provided in an optical fiber reflection photoelectric switch. The optical fiber reflection photoelectric switch is of such constitution that a light emitting element and light receiving element are coupled to the base end side of an optical fiber to irradiate light from the light emitting element to the outside from a point end of the optical fiber, then its reflected light is again guided from the point end of the above described optical fiber and detected by the above described light receiving element.
Brief summary of the invention
It is an object of this invention to provide a microminiaturized light emitting and receiving device in which a a light emitting element and light receiving element are integrated into a chip of semiconductor device and a luminous surface of the light emitting element is very adjacently arranged to a light receiving surface of the light receiving element. In this light emitting and receiving device, the light emitting element and the light receiving element can be optically coupled in very good efficiency to the end face of an optical fiber.
Another object of this invention is to provide a light emitting and receiving device integrated into a chip with a set of light emitting element and light receiving element having enough level of sensitivity for light emitted from the light emitting element and light receiving element having enough level of sensitivity for light emitting from the light emitting element. In the application of this light emitting and receiving device, an optical fiber reflection photoelectric switch can be constituted with only requirement by coupling an optical fiber to said device.
Further object of this invention is to provide a light emitting and receiving element in which the constitutional layer of a light emitting element and light receiving element is partially formed common in a chip of semiconductor device. In this light emitting and receiving element, element construction is simplified capable of performing the integration in high density further eliminating unnecessary work of external wire connection.
Further object of this invention is to provide a light emitting and receiving device with arrangement of both light emitting and receiving elements in such a manner that light from the light emitting element can be efficiently guided to an optical fiber further light from the optical fiber can be received to the light receiving element without causing any amount of loss.
Still further object of this invention is to provide a light reception high sensitive light emitting and receiving device imparting the function of amplifying a photo current to a light receiving element integrated with a light emitting element. In this light emitting and receiving device, an externally attached amplifier for amplifying a light receiving signal is not so required a high level of gain, resulting in the improvement of noise-proof performance.
Still further object of this invention is to provide a light emitting and receiving device in which a plurality of sets of light emitting element and light receiving element are integrated into a chip of semiconductor device further light of different wave length is handled by the light emitting and light receiving element in each set.
Brief description of the drawings
Figures 1 - 5 are views to explain a manufacturing process in the first modification of a device relating to this invention.
Figure 6 is a view showing the device of the first example with circuit symbols.
Figure 7 is a diagram of light emitting and light receiving spectrum characteristics in the device of the first example.
Figure 8 is a view showing the coupling state of an optical fiber to the device of the first example.
Figure 9 is a constitution diagram for an optical communication system applied with the device of the first example.
Figures 10 - 13 are views to explain a manufacturing process in the second example of the device relating to this invention.
Figure 14 is a diagram of light emitting and receiving spectrum characteristics in the device of the second example.
Figure 15 is a view showing the coupling state of the optical fiber to the device of the second example.
Figure 16 is a view showing the device of the second example with circuit symbols.
Figure 17 is a sectional view showing the third example of the device relating to this invention.
Figure 18 is a diagonal view for the device of the third example.
Figure 19 is a view showing the device of the third example with circuit symbols.
Figure 20 is a diagram of light emitting and light receiving spectrum characteristics in the device of the third example.
Detailed description of the invention
Referring now particularly to the first example of a light emitting and receiving device relating to this invention, there is provided the description in accordance with a manufacturing process as shown in Figures 1-5.
Figure 1 shows the construction of a wafer. This wafer is prepared in such a manner that in addition to the growth of a n--type GaAs layer 2 of non-dope onto a n±type CaAs substrate 1 of carrier concentration about 5 x x 1017 3 x 1018 the epitaxial growth of a n-type 0.3GaO.7As layer 3 (Sn or Te dope 0.5 ~ 1 um thick), p-type A#0.05Ga0.95As layer 4 (Ge dope 0.3 ~ 0.5 ,am thick) and n-type A#0.35Ga0.65As layer 5 (Sn or Te dope 3 ~ Sum thick) are successively performed.
For the epitaxial growth a liquid phase epitaxial growth device used with a carbon slide board is applied.
Such a wafer as constituted in the above described manner is of so-called double hetero construction in which a p-type active layer4 performing light emission or reception is interposed to be held by a n-type layer 3 and 5 with a high band gap.
Then as shown in Figure 2, the deposition of a Si3N4fiIm 7 is applied to the other portion of the n-type layer 5 excepting a round portion of diameter (a) in its central part to be used as an emission window 6, and Zn is selectively diffused at 800 C into a quartz angle with ZnAs as the diffusion source, thus a p-type diffusion layer 8 is formed in such a manner as to be intruded into the p-type A#0.0SGa0.9SAs layer 4.
Further, as shown in Figure 3, a bottom surface of the n±type GaAs substrate 1 is sharpened to thinly form the whole body of the wafer to thickness about 100 ~ 200 um. And then the evaporation deposition of a p-type electrode 10 of Au-Zn is applied in a ring-shape to the center portion of the n-type layer 5 with exception of the portion for an emission window 9 in diameter (b). Further to the peripheral portion of the n-type layer 5 a ring-shaped n-type electrode 12 of Au-Zn is evaporation deposited with exception of a ring-shaped incidence window 11 in diameter (c). Still further to the bottom surface of the n±type substrate 1 there is applied the evaporation deposition of an n-type electrode 13 of Au-Ge-Ni. Then heat treatment is applied for about 1 ~ 3 minutes in the hydrogen atmosphere at about 400 C. Finally the above described electrodes 10, 12, 13 can be obtained for use as an electrode of ohmic quality.
Then as shown in Figure 4, to separate a light emitting diode part comprising the emission window 9 (luminous surface) in the central part from a phototransistor part comprising an incidence window 11 (light receiving surface) in the periphery of said light emitting diode part, a round shaped groove 14 is formed in the boundary portion between the above both diode and transistor parts. Said proove 14 reaches a position of the n-type A#0.3Ga0.7As layer 3. This groove 14 is formed by the method of mesa etching with use of etching liquid of sulfuric acid system, for instance, the liquid (3H2SO4; 1 H202; 1 H20).
The appearance of a light emitting and receiving device prepared in such means as described in the above is shown in Figure 5.
In this light emitting and receiving device, there are integrated into a chip of semiconductor device a base open phototransistor of NPN construction, with n-type layers 3, 2, - as the collector, p-type layer 4 as the base and n-type layer 5 as the emitter, and a light emitting diode of PN construction with n-type layers 3, 2, 1 as the cathode and p-type diffusion layer 8 as the anode. The emission window 9 (luminous surface) of the above described light emitting diode is situated at the central part of the incidence window 11 (light receiving surface) in the above described phototransistor in such a manner as to be surrounded by said incidence window 11, and area of the above described light receiving surface is formed fully wider than the light emitting surface.Further an n-type collector layer of the above described phototransistor is formed in common with an n-type cathode layer of the above described light emitting diode. While the p-type anode layer 8 of the above described light emitting diode is provided in the central part of the n-type emitter layer 5 in the above described phototransistor, further this p-type anode layer 8 is separated from the above described n-type emitter layer 5 by the groove 14 formed in the periphery of said layer 8. There is a schematic view of Figure 6 showing this light emitting and receiving device represented by circuit symbols.
Further in case of constituting the above described light emitting and receiving device with the assumption of 50 itm for diameter (b) of the above described light emission window 9, about 40 cm for width of the above described groove 14 and 500 Fm for diameter (c) of the above described incidence window 11,there are obtained the distribution of light emitting spectra from the above described light emitting diode as shown in
Figure 7 (A) and the sensitivity distribution of spectra in the above described photodiode as shown in Figure 7 (B), in which a common range of wave length is contained between the light emitting spectrum distribution and the spectrum sensitivity distribution.
The luminous characteristic, as shown in the Figure 7 (A), is provided with a particular quality having a peak point at a position of wave length about 820 cm, and this luminous spectrum shows its shape with the peak wave length slightly shifted toward the side of longer wave length than the wave length corresponding to band gap energy of the p-type layer 4 of an active layer. This is caused by a primary factor thermally obtained from a temperature rise or the like in active layer.
For the light reception characteristic, as shown in Figure 7 (B), this light reception spectrum can be understood that the detectable wave length region of its element is from a position about 650 nm at the short wave length side to a position about 840 nm at the reception of absorption in the p-type layer 4. This value corresponds to the respective band gap energy 1.88 ev and 1.48 ev of the p-type layer 4 and n-type layer 5.
Now there is shown in Figure 8 the modification of a light emitting and receiving device such formed as in the above applied to an optical communication system. Referring to the Figure, the light emitting and receiving device described in detail by Figures 1 ~ 6 is constituted such that sides of the incidence window 11 and the emission window 9 are closely arranged to the end face of an optical fiber 15 performing the transmission-reception of optical data while the electrode 13 is connected to an externally take-off terminal 17 through a lead wire 16 then the electrode 12 is connected to an externally take-off terminal 19 through a lead wire 18 further the electrodes 12 and 10 are arranged in a common connection by a lead wire 20.In this way, there can be obtained a parallel connection of the light emitting diode and the phototransistor with reverse polarity to each other. Then as shown in Figure 9, to both ends of the fiber 15 light emitting and receiving devices 121 and 122 are arranged respectively while to terminals 123 and 124 at both ends of the light emitting and receiving device 121 a transmission circuit 126 is connected through a transmissionreception selector switch 125. On the other hand, also at the other end side of the fiber 15 terminals 127 and 128 of the light emitting and receiving device 122 are connected similarly to the above to a transmission circuit 130 through a transmission-reception selector switch 129.
For the optical communication system of such constitution as described, in case of feeding optical data from the side of the light emitting and receiving device 121 to the side of the light emitting and receiving device 122, if the transmission-reception selector switch 125 is turned to its transmission side (a) and the transmission-reception selector switch 129 to its reception side (b), an electric current flows not in a phototransistor TR, but in a forward direction in a light emitting diode D1 of the light emitting and receiving device 121, thus an electric signal from the transmission circuit 126 is converted into an optical signal in the light emitting diode D1 and fed to the optical fiber 15.
Further in a side of the light emitting and receiving device 122 at the reception side, the polarity of a bias signal given from the transmission circuit 130 is reversely provided to a light emitting diode D2 and in a forward direction for a phototransistor TR2 not to allow the light emitting diode D2 to emit light, then an optical signal introduced into the optical fiber 15 is converted into an electric signal by the phototransistor
TR2.
While in case of feeding an optical signal from a side of the light emitting and receiving device 122 and receiving the said optical signal at a side of the light emitting and receiving device 121, there are only required selecting operations of the transmission-reception selector switches 125 and 129 turned to their side reversely to the above described manner.
As described in the above, in the light emitting and receiving device relating to this invention consisting of semiconductor device integrated into a chip, the semiconductor is coupled to the end face of an optical fiber, then introduction of an optical signal into the optical fiber and reception of the optical signal from the optical fiber can be performed in very high efficiency. Particularly, the phototransistor, being formed fully wide in its light receiving area further being provided with an amplifying action for a photo current, causes very high sensitivity of receiving light.
Now referring to the second example of the light emitting and receiving device relating to this invention, there is provided the description in accordance with Figures 10 ~ 16.
Figure 10 shows a view of the wafer in which a p-type GaAs layer 23, n-type A#0.3Ga0.7As layer 24 (Sn or
Te dope 3 Ftm thick), A60.O5GaO.95As layer 25 of non-dope and p-type A('0.3Ga0.7As layer 26 (Ge dope 3 um thick) are allowed to succesively perform the epitaxial growth on top of the growth of an n--type GaAs layer 22 of non-dope on an n±type GaAs substrate 21 of carrier concentration about 5 x 1017 ~ 3 x 1018.
For operation of the epitaxial growth, a liquid phase epitaxial growth device is applied in which a normal carbon slide board is used.
This wafer comprises a light emitting diode of double hetero construction, in which the light emitting At'0.05Ga0.95As layer 25 is interposed to be held by the p-type A#0.3Ga0.7As layer 26 and n-type A#0.3Ga0.7As layer 24 with a high band gap, and a base open hetero junction phototransistor having a wide gap emitter with the light receiving n-type A#0.3Ga0.7As layer 24 as the emitter, p-type GaAs layer 23 as the base and n--type GaAs layer 22 as the collector.
Now referring to a view as shown in Figure 11, a H+ ion is implanted by an ion implantation device to the central part of the p-type A#0.3Ga0.7As layer 26 in the above described wafer excepting a round shaped part 33 in diameter (b), and mesa etching operation is performed by using etching liquid of sulfuric acid system (3H2SO4:1 1H202 : 1 H20) to the part excepting a round shaped part in diameter (c). An ion implanted layer 34 reaches a position of the n-type At 0.3GaO.7As layer 24 to form a high resistance layer with good permeability of light. Then the deposition of a Si3N4 film 39 is applied to the whole body.
Then the n'-type GaAs substrate 21 of the above described wafer is polished to thinly form the whole body of the wafer to a thickness of about 100 ~ 200 um, and then as shown in Figure 12 a P-type electrode 43 of
Au-Zn is evaporation deposited to the central part at a side of the p-type A#0.3Ga0.7As layer 26 except a round shaped portion 44 in diameter (d) used as the emission window of light, further an n-type electrode 40 of AU-Ge is evaporation deposited to the peripheral portion of said electrode 43 except a round shaped portion in diameter (e) used as the incidence window of light, and an-type electrode 41 of AU-Ge-Ni is evaporation deposited to the side of the n ±type GaAs substrate 21.All electrodes can be used as an electrode of ohmic quality by applying heat treatment for about 1 ~ 3 minutes in the hydrogen atmosphere at 400#C.
Figure 13 is a diagonal view showing the element in Figure 12. A P-type electrode 43 of AU-Zn is guided to a peripheral portion 54 of the diameter (c) to complete the wafer element by applying the wire bonding.
A full line (B) in Figure 14 shows a sensitivity characteristic of light receiving spectrum in this device. It can be understood that the thin A'0.05Ga0.95As layer 25 absorbs little amount of light and a detectable region of wave length of this element is from about 700 nm at the side of short wave length to about 870 nm at a position of absorption by the p-type GaAs layer 22. These correspond to the respective band gap energy 1.75 eV and 1.4eV.
A dotted line (A) in Figure 14 shows the characteristic of light emitting spectrum in this device. The light emitting spectrum is of such shape with the peak wave length slightly shifting toward the side of longer wave length than the wave length corresponding to band gap energy of the A#0.05Ga0.95As layer 25 of active layer. This is caused by a primary factor thermally produced by a temperature rise or the like in the active layer. As shown in the Figure it is understood that the light emitting spectrum is fully enclosed in a region of detectable wave length of the light receiving spectrum sensitivity characteristic.Accordingly, because the emitted light is all detectable, this device can be used for the before described single fiber bidirectional communication system as the light emission-reception integrally formed element having both functions of emitting and receiving light.
Figure 15 is a view showing a state in which an optical fiber 60 is coupled to the above described light emitting and receiving device. At a position about 60 um from about a luminous surface E of the central portion and a light receiving surface D in the peripheral portion, there is situated, for instance, an end face of the optical fiber 60 with a core 61 in diameter 200 ~ 400 um. An external lead-out wire 65 (corresponding to emitter of phototransistor) from an electrode 40, external lead-out wire 66 (corresponding to collector of phototransistor) from the other electrode 41 further external lead-out wire 64 (corresponding to anode of light emitting diode) from an electrode 43 are drawn out. (Refer to Figure 16).
When negative voltage is applied to the lead-out wire 65 and positive voltage to 66, the light receiving part operates to function as a phototransistor.
Now for propagation of light from the core 61 of the optical fiber, energy of light irradiated to the light receiving surface D is converted into a photocurrent further with current amplification to hFE times by transistor action. For large optical input, a state of electric conduction is likely obtained between collector and emitter, and the conversion can be performed into a digital signal of level "0" and "1" without further providing an external amplifier circuit of high gain.
Now in case of application with negative voltage to the lead-out wire 65 and positive voltage to the wire 64, the light emitting part performs operation of light emitting diode. The flowing route of a Pn junction current is reduced by the ion implanted layer 34 due to its high resistance, consequently the Pn junction current causes spot shaped emission of light with a high level of luminance at a Pn junction surface and is coupled to the core 61 of the optical fiber 60 then propagated in the core at an optical level.
Now referring to Figures 17 ~ 20, there is the description for the third modification of a light emitting and receiving device relating to this invention.
A device in this modication of the third example is of such constitution that two sets of light emitting diodes and phototransistors are integrated into a chip of semiconductor device. The light emitting diode and phototransistor in each set are fundamentally of the same element construction as in the before described second example.Their element is arranged, as shown in Figures 17 and 18, in such a manner that the circular region of a wafer is divided by a groove 100 into two semicircular regions D1, D2, in each of the two semicircular regions D1, D2 a set of light emitting diode end phototransistor is provided, further luminous surfaces 200a, 200b of the two light emitting diodes are situated in the central part of the above described circular region, then light receiving surfaces 300a, 300b of the two phototransistors are located in the periphery of said circular region. Speaking in short, there is provided arrangement of the element divided into the two sets of light emitting diodes and phototransistors by the groove 100 in the second example.And the elements at the both sides of said groove 100 provided with different composition from each other allow the spectrum characteristic of the light emitting diode and phototransistor in each set to cause a difference.
There is shown as follows composition of each layer in the device illustrated in Figures 17, 18.
21 .. n±type GaAs substrate
22a .. n--type GaAs layer
22b .. n-type AP0.2GaO.8As layer (Te dope)
23a .. p-type GaAs layer
23b .. p-type A6'0.2GaO.8As layer (Ge dope)
24a .. n-type Ae0.2Ga0.8As layer (Te dope)
24b .. n-type A60.5GaO.5As layer (Te dope)
25a .. A'0.O5GaO.95As layer (non-dope)
25b .. A#0.25Ga0.75As layer (non-dope)
26a .. p-type A#0.2Ga0.8As layer (Ge dope)
26b .. p-type At0.5GaO.5As layer (Ge dope)
34 .. H+ ion implanted layer
39 ..Si3N4film
And referring to Figure 19 as illustrated by circuit symbols, an electrode 41 formed on the bottom surface of the substrate 21 is used for the common collector electrode of the two phototransistors. An electrode 40a formed in an n-type layer 24a serves as an emitter-cathode common electrode for one set of phototransistor and light emitting diode. An electrode 40b formed in an n-type layer 24b serves as an emitter-cathode common electrode for the other set of phototransistor and light emitting diode. Further electrodes 43a, 43b formed in p-type layers 26a, 26b respectively serve as anode electrodes for the two light emitting diodes respectively.
Referring to Figure 20, there are provided with (A1) for the luminous characteristic of a light emitting diode at the side of the semicircular region D1 (B1) for the light receiving characteristic of a phototransistor at the side of D1 (A2) for the luminous characteristic of a light emitting diode at the side of the semicircular region
D2 and (B2) for the light receiving characteristic of a phototransistor at the side of D2. As shown in said Figure 20, there are almost identical the distribution of luminous spectrum of light emitting diodes and the sensitivity distribution of spectrum of phototransistors in the both sets further with a difference of distribution between spectra in the two sets.Accordingly, in this modification of the third example of a light emitting and receiving device, a wave length multiplex bidirectional optical communication system can be constituted by using a single optical fiber.
In addition to the above described example, although the light emitting part is applied the double hetero junction, there is only required a wider band gap of the layerforthe light emitting part than that for the light receiving part, and application of the homo junction may be substituted. While though the light receiving part is formed to a hetero junction phototransistor of wide gap emitter base open type, a base terminal may be extracted to the outside or with a general phototransistor available without application of hetero junction.
Further in the above example though the flow of an electric current is reduced by the method of ion implantation, the method of current reduction, being provided with various kinds, will not be limited to the ion implantation. Further for the above example though the description was performed by using a GaAa-A'GaAs mixed crystal system, the composition of semiconductors will not be limited to the above and it is obvious that a semiconductor of the other composition of InP, InGaAs, InGaAsP and the like may be used.
Claims (17)
1. A light emitting and receiving device, comprising at least one set of light emitting element, converting an electric signal into an optical signal, and light receiving element, converting an optical signal into an electric signal, integrally provided in a semiconductor device.
2. The light emitting and receiving device of Claim 1, characterizing a common range of wave length contained in luminous spectrum distribution of said light emitting element and spectrum sensitivity distribution of said light receiving element in the above set.
3. The light emitting and receiving device of Claim 1, characterizing commonness partially in a constitution layer of said light emitting element and said light receiving element in the above set.
4. The light emitting and receiving device of Claim 1, characterizing such constitution that a luminous surface of said light emitting element is situated in the central part of a light receiving surface of said light receiving element, forming the above set with said light emitting element, so as to be surrounded by said light receiving surface.
5. The light emitting and receiving device of Claim 1, in which the light receiving surface of said light receiving element is wider than the luminous surface of said light emitting element paired with said light receiving element.
6. The light emitting and receiving device of Claim 1, characterizing the light emitting diode of PN junction construction in said light emitting element.
7. The light emitting and receiving device of Claim 1, characterizing said light receiving element serving as a phototransistor.
8. The light emitting and receiving device of Claim 1, characterizing said light receiving element formed to a phototransistor of NPN construction.
9. The light emitting and receiving device of Claim 1, comprising the character in which said light emitting element is served as a light emitting diode further said light receiving element arranged in a set with said light emitting element is formed to a phototransistor of NPN construction and there are formed in common the N-type collector layer of said phototransistor and the N-type cathode layer of said light emitting diode.
10. The light emitting and receiving device of Claim 9, comprising the character, in which a P-type anode layer of said light emitting diode is provided in the central part of an N-type emitter layer of said phototransistor further said P-type anode layer is separated from said N-type emitter layer by a groove formed in the periphery of said anode layer.
11. The light emitting and receiving device of Claim 1, in which said light emitting element acts as a light emitting diode further said light receiving element arranged in a set with said light emitting element is formed to a phototransistor of NPN construction then the N-type emitter layer of said phototransistor is formed in common to the N-type cathode layer of said light emitting diode.
12. The light emitting and receiving device of Claim 1, comprising the character, in which the P-type anode layer of said light emitting diode is formed on the top portion of the N-type emitter layer of said phototransistor.
13. The light emitting and receiving device of Claim 1, comprising the character, in which a plurality of sets of said light emitting element and said light receiving element are provided with the distribution of luminous spectrum of the light emitting element in each set almost equal to the distribution of spectrum sensitivity of the light receiving element further with a difference between said spectrum distributions in each set.
14. The light emitting and receiving device of Claim 1, comprising the feature, in which a plurality of sets of said light emitting elements and said light receiving elements are provided and the constitutional layer of each light receiving element is partially formed in common.
15. The light emitting and receiving device of Claim 14, in which each of said light receiving elements is formed to a phototransistor of NPN construction further the N-type collector layer of each phototransistor is formed in common.
16. The light emitting and receiving device of Claim 1, having the feature, in which every set of said light emitting element and light receiving element is provided in each of the semicircular halves of a circular region divided into two parts further in the central part of said circular region light emitting surfaces of the two light emitting elements are situated simultaneously in the periphery of said central part light receiving surfaces of the two light receiving elements are positioned.
17. The light emitting and receiving device of Claim 1, comprising the character, in which said light emitting element and said light receiving element are formed on the GaAs substrate.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2509781A JPS57139976A (en) | 1981-02-23 | 1981-02-23 | Light emitting/receiving device |
| JP5006881U JPS57163754U (en) | 1981-04-06 | 1981-04-06 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| GB2094060A true GB2094060A (en) | 1982-09-08 |
| GB2094060B GB2094060B (en) | 1985-04-17 |
Family
ID=26362690
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB8205246A Expired GB2094060B (en) | 1981-02-23 | 1982-02-23 | Light emitting and receiving device |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB2094060B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0116304A2 (en) * | 1983-01-14 | 1984-08-22 | Kabushiki Kaisha Toshiba | Composite optical semiconductor device |
| US4879250A (en) * | 1988-09-29 | 1989-11-07 | The Boeing Company | Method of making a monolithic interleaved LED/PIN photodetector array |
| WO1993018555A1 (en) * | 1992-03-04 | 1993-09-16 | Welch Allyn, Inc. | Integrated solid state light emitting and detecting array and apparatus employing said array |
-
1982
- 1982-02-23 GB GB8205246A patent/GB2094060B/en not_active Expired
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0116304A2 (en) * | 1983-01-14 | 1984-08-22 | Kabushiki Kaisha Toshiba | Composite optical semiconductor device |
| EP0116304A3 (en) * | 1983-01-14 | 1986-10-15 | Kabushiki Kaisha Toshiba | Composite optical semiconductor device |
| US4879250A (en) * | 1988-09-29 | 1989-11-07 | The Boeing Company | Method of making a monolithic interleaved LED/PIN photodetector array |
| WO1993018555A1 (en) * | 1992-03-04 | 1993-09-16 | Welch Allyn, Inc. | Integrated solid state light emitting and detecting array and apparatus employing said array |
| US5319182A (en) * | 1992-03-04 | 1994-06-07 | Welch Allyn, Inc. | Integrated solid state light emitting and detecting array and apparatus employing said array |
| EP0764916A1 (en) * | 1992-03-04 | 1997-03-26 | Welch Allyn, Inc. | Integrated solid state light emitting and detecting array and apparatus employing said array |
Also Published As
| Publication number | Publication date |
|---|---|
| GB2094060B (en) | 1985-04-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PCNP | Patent ceased through non-payment of renewal fee |