GB2081009A - Electron irradiation of power transistors - Google Patents
Electron irradiation of power transistors Download PDFInfo
- Publication number
- GB2081009A GB2081009A GB8109087A GB8109087A GB2081009A GB 2081009 A GB2081009 A GB 2081009A GB 8109087 A GB8109087 A GB 8109087A GB 8109087 A GB8109087 A GB 8109087A GB 2081009 A GB2081009 A GB 2081009A
- Authority
- GB
- United Kingdom
- Prior art keywords
- lifetime
- transistors
- radiation
- electron
- collector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000000034 method Methods 0.000 claims abstract description 24
- 239000004065 semiconductor Substances 0.000 claims abstract description 12
- 238000005259 measurement Methods 0.000 claims abstract description 4
- 238000012360 testing method Methods 0.000 claims abstract description 4
- 230000005855 radiation Effects 0.000 claims description 32
- 238000009792 diffusion process Methods 0.000 claims description 11
- 230000001678 irradiating effect Effects 0.000 claims description 8
- 230000009467 reduction Effects 0.000 abstract description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract description 2
- 239000010931 gold Substances 0.000 abstract description 2
- 229910052737 gold Inorganic materials 0.000 abstract description 2
- 238000005215 recombination Methods 0.000 description 10
- 230000006798 recombination Effects 0.000 description 10
- 238000013461 design Methods 0.000 description 9
- 239000000969 carrier Substances 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000000370 acceptor Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 102220047090 rs6152 Human genes 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000007619 statistical method Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- High Energy & Nuclear Physics (AREA)
- Ceramic Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
- Thyristors (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US17178780A | 1980-07-24 | 1980-07-24 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB2081009A true GB2081009A (en) | 1982-02-10 |
Family
ID=22625139
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB8109087A Withdrawn GB2081009A (en) | 1980-07-24 | 1981-03-24 | Electron irradiation of power transistors |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS5753978A (zh) |
| BR (1) | BR8101653A (zh) |
| CA (1) | CA1165467A (zh) |
| DE (1) | DE3111598A1 (zh) |
| FR (1) | FR2487575A1 (zh) |
| GB (1) | GB2081009A (zh) |
| IN (1) | IN153170B (zh) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4806497A (en) * | 1986-09-17 | 1989-02-21 | Bbc Brown Boveri Ag | Method for producing large-area power semiconductor components |
| US5151766A (en) * | 1989-05-18 | 1992-09-29 | Asea Brown Boveri Ltd. | Semiconductor component |
| WO2005015641A1 (en) * | 2003-08-02 | 2005-02-17 | Zetex Plc | Biopolar transistor with a low saturation voltage |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3933527A (en) * | 1973-03-09 | 1976-01-20 | Westinghouse Electric Corporation | Fine tuning power diodes with irradiation |
| US4075037A (en) * | 1976-05-17 | 1978-02-21 | Westinghouse Electric Corporation | Tailoring of recovery charge in power diodes and thyristors by irradiation |
-
1981
- 1981-03-07 IN IN246/CAL/81A patent/IN153170B/en unknown
- 1981-03-09 CA CA000372536A patent/CA1165467A/en not_active Expired
- 1981-03-20 BR BR8101653A patent/BR8101653A/pt unknown
- 1981-03-24 GB GB8109087A patent/GB2081009A/en not_active Withdrawn
- 1981-03-24 DE DE19813111598 patent/DE3111598A1/de not_active Withdrawn
- 1981-06-23 FR FR8112337A patent/FR2487575A1/fr active Granted
- 1981-07-21 JP JP11306981A patent/JPS5753978A/ja active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4806497A (en) * | 1986-09-17 | 1989-02-21 | Bbc Brown Boveri Ag | Method for producing large-area power semiconductor components |
| US5151766A (en) * | 1989-05-18 | 1992-09-29 | Asea Brown Boveri Ltd. | Semiconductor component |
| WO2005015641A1 (en) * | 2003-08-02 | 2005-02-17 | Zetex Plc | Biopolar transistor with a low saturation voltage |
| US7923751B2 (en) | 2003-08-02 | 2011-04-12 | Zetex Plc | Bipolar transistor with a low saturation voltage |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2487575B1 (zh) | 1984-06-15 |
| DE3111598A1 (de) | 1982-03-11 |
| BR8101653A (pt) | 1982-08-17 |
| CA1165467A (en) | 1984-04-10 |
| FR2487575A1 (fr) | 1982-01-29 |
| JPS5753978A (ja) | 1982-03-31 |
| IN153170B (zh) | 1984-06-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |