CA1165467A - Electron irradiation of high level transistors - Google Patents
Electron irradiation of high level transistorsInfo
- Publication number
- CA1165467A CA1165467A CA000372536A CA372536A CA1165467A CA 1165467 A CA1165467 A CA 1165467A CA 000372536 A CA000372536 A CA 000372536A CA 372536 A CA372536 A CA 372536A CA 1165467 A CA1165467 A CA 1165467A
- Authority
- CA
- Canada
- Prior art keywords
- radiation
- transistor
- predetermined
- lifetime
- time
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000003860 storage Methods 0.000 claims abstract description 44
- 238000000034 method Methods 0.000 claims abstract description 29
- 239000004065 semiconductor Substances 0.000 claims abstract description 18
- 230000001678 irradiating effect Effects 0.000 claims abstract description 11
- 230000005855 radiation Effects 0.000 claims description 34
- 238000009792 diffusion process Methods 0.000 claims description 11
- 230000004907 flux Effects 0.000 claims description 10
- 230000009467 reduction Effects 0.000 claims description 6
- 241001663154 Electron Species 0.000 abstract description 2
- 230000006798 recombination Effects 0.000 description 10
- 238000005215 recombination Methods 0.000 description 10
- 239000000969 carrier Substances 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000000370 acceptor Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 102100022108 Aspartyl/asparaginyl beta-hydroxylase Human genes 0.000 description 1
- 101000901030 Homo sapiens Aspartyl/asparaginyl beta-hydroxylase Proteins 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000007619 statistical method Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- High Energy & Nuclear Physics (AREA)
- Toxicology (AREA)
- Manufacturing & Machinery (AREA)
- Health & Medical Sciences (AREA)
- Ceramic Engineering (AREA)
- Bipolar Transistors (AREA)
- Thyristors (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US17178780A | 1980-07-24 | 1980-07-24 | |
US171,787 | 1980-07-24 |
Publications (1)
Publication Number | Publication Date |
---|---|
CA1165467A true CA1165467A (en) | 1984-04-10 |
Family
ID=22625139
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA000372536A Expired CA1165467A (en) | 1980-07-24 | 1981-03-09 | Electron irradiation of high level transistors |
Country Status (7)
Country | Link |
---|---|
JP (1) | JPS5753978A (zh) |
BR (1) | BR8101653A (zh) |
CA (1) | CA1165467A (zh) |
DE (1) | DE3111598A1 (zh) |
FR (1) | FR2487575A1 (zh) |
GB (1) | GB2081009A (zh) |
IN (1) | IN153170B (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CH670332A5 (zh) * | 1986-09-17 | 1989-05-31 | Bbc Brown Boveri & Cie | |
EP0398120B1 (de) * | 1989-05-18 | 1993-10-13 | Asea Brown Boveri Ag | Halbleiterbauelement |
GB0318146D0 (en) * | 2003-08-02 | 2003-09-03 | Zetex Plc | Bipolar transistor with a low saturation voltage |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3933527A (en) * | 1973-03-09 | 1976-01-20 | Westinghouse Electric Corporation | Fine tuning power diodes with irradiation |
US4075037A (en) * | 1976-05-17 | 1978-02-21 | Westinghouse Electric Corporation | Tailoring of recovery charge in power diodes and thyristors by irradiation |
-
1981
- 1981-03-07 IN IN246/CAL/81A patent/IN153170B/en unknown
- 1981-03-09 CA CA000372536A patent/CA1165467A/en not_active Expired
- 1981-03-20 BR BR8101653A patent/BR8101653A/pt unknown
- 1981-03-24 DE DE19813111598 patent/DE3111598A1/de not_active Withdrawn
- 1981-03-24 GB GB8109087A patent/GB2081009A/en not_active Withdrawn
- 1981-06-23 FR FR8112337A patent/FR2487575A1/fr active Granted
- 1981-07-21 JP JP11306981A patent/JPS5753978A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
GB2081009A (en) | 1982-02-10 |
BR8101653A (pt) | 1982-08-17 |
FR2487575B1 (zh) | 1984-06-15 |
FR2487575A1 (fr) | 1982-01-29 |
JPS5753978A (ja) | 1982-03-31 |
DE3111598A1 (de) | 1982-03-11 |
IN153170B (zh) | 1984-06-09 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MKEX | Expiry |