GB2073519B - Complementary metal oxide semiconductor integrated circuit including a voltage regulator for a section operated at low voltage - Google Patents

Complementary metal oxide semiconductor integrated circuit including a voltage regulator for a section operated at low voltage

Info

Publication number
GB2073519B
GB2073519B GB8011323A GB8011323A GB2073519B GB 2073519 B GB2073519 B GB 2073519B GB 8011323 A GB8011323 A GB 8011323A GB 8011323 A GB8011323 A GB 8011323A GB 2073519 B GB2073519 B GB 2073519B
Authority
GB
United Kingdom
Prior art keywords
integrated circuit
metal oxide
oxide semiconductor
semiconductor integrated
circuit including
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB8011323A
Other versions
GB2073519A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Semiconductor Corp
Original Assignee
National Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Semiconductor Corp filed Critical National Semiconductor Corp
Priority to GB8011323A priority Critical patent/GB2073519B/en
Publication of GB2073519A publication Critical patent/GB2073519A/en
Application granted granted Critical
Publication of GB2073519B publication Critical patent/GB2073519B/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/247—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the supply voltage
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Semiconductor Integrated Circuits (AREA)
GB8011323A 1980-04-03 1980-04-03 Complementary metal oxide semiconductor integrated circuit including a voltage regulator for a section operated at low voltage Expired GB2073519B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB8011323A GB2073519B (en) 1980-04-03 1980-04-03 Complementary metal oxide semiconductor integrated circuit including a voltage regulator for a section operated at low voltage

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB8011323A GB2073519B (en) 1980-04-03 1980-04-03 Complementary metal oxide semiconductor integrated circuit including a voltage regulator for a section operated at low voltage

Publications (2)

Publication Number Publication Date
GB2073519A GB2073519A (en) 1981-10-14
GB2073519B true GB2073519B (en) 1984-04-18

Family

ID=10512600

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8011323A Expired GB2073519B (en) 1980-04-03 1980-04-03 Complementary metal oxide semiconductor integrated circuit including a voltage regulator for a section operated at low voltage

Country Status (1)

Country Link
GB (1) GB2073519B (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2207315B (en) * 1987-06-08 1991-08-07 Philips Electronic Associated High voltage semiconductor with integrated low voltage circuitry
JPH0673092B2 (en) * 1988-04-12 1994-09-14 日本電気株式会社 Constant voltage generator
WO1995019046A1 (en) * 1994-01-10 1995-07-13 Carnegie Mellon University Four rail circuit architecture for ultra-low power and voltage cmos circuit design
US5814845A (en) * 1995-01-10 1998-09-29 Carnegie Mellon University Four rail circuit architecture for ultra-low power and voltage CMOS circuit design
US6366061B1 (en) 1999-01-13 2002-04-02 Carnegie Mellon University Multiple power supply circuit architecture

Also Published As

Publication number Publication date
GB2073519A (en) 1981-10-14

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee