GB2068639B - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
GB2068639B
GB2068639B GB8102425A GB8102425A GB2068639B GB 2068639 B GB2068639 B GB 2068639B GB 8102425 A GB8102425 A GB 8102425A GB 8102425 A GB8102425 A GB 8102425A GB 2068639 B GB2068639 B GB 2068639B
Authority
GB
United Kingdom
Prior art keywords
memory device
semiconductor memory
semiconductor
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB8102425A
Other versions
GB2068639A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Publication of GB2068639A publication Critical patent/GB2068639A/en
Application granted granted Critical
Publication of GB2068639B publication Critical patent/GB2068639B/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/205—Substrate bias-voltage generators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
GB8102425A 1980-02-05 1981-01-27 Semiconductor memory device Expired GB2068639B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1285780A JPS56110252A (en) 1980-02-05 1980-02-05 Semiconductor memory device

Publications (2)

Publication Number Publication Date
GB2068639A GB2068639A (en) 1981-08-12
GB2068639B true GB2068639B (en) 1983-10-26

Family

ID=11817066

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8102425A Expired GB2068639B (en) 1980-02-05 1981-01-27 Semiconductor memory device

Country Status (6)

Country Link
JP (1) JPS56110252A (en)
CA (1) CA1137221A (en)
DE (1) DE3103809C2 (en)
FR (1) FR2475272B1 (en)
GB (1) GB2068639B (en)
NL (1) NL8100532A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60253090A (en) * 1984-05-30 1985-12-13 Hitachi Ltd Semiconductor device
KR890005159B1 (en) * 1987-04-30 1989-12-14 삼성전자 주식회사 The generator of back-bias voltage
US6825878B1 (en) * 1998-12-08 2004-11-30 Micron Technology, Inc. Twin P-well CMOS imager

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE789500A (en) * 1971-09-30 1973-03-29 Siemens Ag SEMICONDUCTOR MEMORY WITH SINGLE TRANSISTOR MEMORIZATION ELEMENTS
DE2450116C2 (en) * 1974-10-22 1976-09-16 Siemens AG, 1000 Berlin und 8000 München One transistor dynamic memory element for non-volatile memory and method for its operation
DE2632199A1 (en) * 1976-07-16 1978-01-19 Siemens Ag Integratable voltage multiplier with cascaded FET stages - each providing supply for next stage and each having two cross-coupled FETs
JPS5644189A (en) * 1979-09-19 1981-04-23 Hitachi Ltd Semiconductor memory

Also Published As

Publication number Publication date
NL8100532A (en) 1981-09-01
DE3103809A1 (en) 1981-12-17
FR2475272B1 (en) 1986-02-28
DE3103809C2 (en) 1988-03-03
CA1137221A (en) 1982-12-07
JPS56110252A (en) 1981-09-01
GB2068639A (en) 1981-08-12
FR2475272A1 (en) 1981-08-07

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee