GB2065404A - Voltage selector circuit - Google Patents

Voltage selector circuit Download PDF

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Publication number
GB2065404A
GB2065404A GB7942591A GB7942591A GB2065404A GB 2065404 A GB2065404 A GB 2065404A GB 7942591 A GB7942591 A GB 7942591A GB 7942591 A GB7942591 A GB 7942591A GB 2065404 A GB2065404 A GB 2065404A
Authority
GB
United Kingdom
Prior art keywords
voltage
selector circuit
mos transistors
substrate
supplied
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB7942591A
Other versions
GB2065404B (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Casio Computer Co Ltd
Original Assignee
Casio Computer Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Casio Computer Co Ltd filed Critical Casio Computer Co Ltd
Priority to GB7942591A priority Critical patent/GB2065404B/en
Publication of GB2065404A publication Critical patent/GB2065404A/en
Application granted granted Critical
Publication of GB2065404B publication Critical patent/GB2065404B/en
Priority to HK21085A priority patent/HK21085A/en
Expired legal-status Critical Current

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Classifications

    • GPHYSICS
    • G04HOROLOGY
    • G04GELECTRONIC TIME-PIECES
    • G04G19/00Electric power supply circuits specially adapted for use in electronic time-pieces
    • GPHYSICS
    • G04HOROLOGY
    • G04GELECTRONIC TIME-PIECES
    • G04G9/00Visual time or date indication means
    • G04G9/0023Visual time or date indication means by light valves in general
    • G04G9/0029Details
    • G04G9/0047Details electrical, e.g. selection or application of the operating voltage
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/693Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/09425Multistate logic
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K2217/00Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0036Means reducing energy consumption

Abstract

In a voltage selector circuit, a plurality of supply voltages (V0, V1, V2) are respectively supplied to a plurality of switching elements formed of MOS transistors (11, 12, 13, 14, 15) which are turned on and off according to the voltage levels of input signals (A0, A1) supplied thereto to provide a selected one of the supply voltages at output terminal (B0). The substrate electrode of transistor 15 is selectively connected to supply voltages V1, V2 via further switching transistors 17, 18 which are also controlled by signal A0, A1 such that the drain/ substrate diode is never forward biassed, thereby reducing power loss in the circuit. <IMAGE>

Description

SPECIFICATION Voltage selector circuit This invention relates to a voltage selector circuit capable of selectively taking out a plurality of voltages at different levels.
Generally, in driving liquid-crystal display devices for electronic desk top calculator, electronic watches or clocks, etc. according to a dynamic-drive display system, it is necessary to use signals consisting of voltages at 3-value or more levels. Also, in an ink-jet-type printing system, for example, it is required that signals from a character signal generator circuit be D/A-converted as voltage signals at a plurality of levels be successively delivered to deflecting electrodes in accordance with printed characters. In order to obtain such voltages at a plurality of levels, there is used a voltage selector circuit generally so constructed as shown in Fig. 1.The circuit of Fig. 1 is a voltage selector circuit for taking out voltage waveform signals (common electrode driving signals) at 3-value levels to be supplied to a liquid-crystal display device when dynamically driving the display device. In Fig. 1, numerals 1 and 2 designte p-type MOS transistors, while numerals 3, 4 and 5 designate n-type transistors. The bases of the MOS transistors 1 and 4 are supplied with an input signal Ao (32 Hz) as shown in Fig. 2(A), the bases of the MOS transistors 2 and 5 are supplied with an input signal A, (64 Hz) as shown in Fig.
2(B), and the signal A, is applied to the gate of the MOS transistor 3 through an inverter 6.
Further, voltages V0 (O V), V, (- 1.5 V) and V2 (- 3 V) are supplied to the sources of the MOS transistors 1, 5 and 4, respectively. The respective drains of the MOS transistors 2, 3 and 5 are connected together to form an output terminal Bo.
With such construction, when the voltage levels of the input signals Ao and A, are both low, the MOS transistors 1, 2 and 3 are turned on, and the MOS transistors 4 and 5 are turned off, so that the voltage V0 appears at the output terminal Bo. When the voltage levels of the input signals Ao and A, are low and high respectively, the MOS transistors 1 and 5 are turned on, and the MOS transistors 2, 3 and 4 are turned off, so that the voltage V, appears at the output terminal Bo. On the other hand, when the voltage levels of the input signals Ao and A, are high and low respectively, the MOS transistors 2, 3 and 4 are turned on, and the MOS transistors 1 and 5 are turned off, so that the voltage V2 is delivered from the output terminal Bo. By such switching operations of those individual transistors, a voltage waveform signal at 3value levels as shown in Fig. 2(C) may be obtained from the output terminal B,.
Hereupon, the MOS transistor 5 constitutes the point of this circuit. Fig. 3 specifically shows the arrangement of the MOS transistor 5, in which n-type semiconductor layers are formed on a p-type semiconductor substrate at both right and left sides thereof, the substrate being supplied with a substrate voltage C. In this MOS transistor 5, when the voltage at the output terminal B0 is the voltage V2 (- 3 V), the drain electrode is supplied with the voltage V2 (- 3 V), and the voltage V, (- 1.5 V) is applied to the substrate electrode which is supplied with the same voltage as the source voltage. As generally known, a diode characteristic as indicated by broken lines of Fig. 3 is seen between the drain and substrate, so that the voltages are applied in the forward direction in the aforesaid state.
Thus, a diode effect arises to produce a current flow, causing power loss. As a result, the life of batteries used as a power source for some electronic devices, such as electronic wrist watches, will be shortened, requiring more frequency replacement of batteries.
This invention is contrived in consideration of the above-mentioned circumstances, and is intended to provide a voltage selector circuit capable of eliminating power loss caused by the potential different between the voltage of output signal and substrate voltage and ensuring prolonged life of batteries.
In order to attain the above object of the invention, there is provided a voltage selector circuit in which a voltage waveform signal corresponding to one selected among voltages from a plurality of power sources is taken out from a common output terminal by selectively turning on and off switching elements formed of MOS transistors, the circuit being characterized in that corresponding one of the supply voltages is supplied to the substrate electrode of a specified one of the switching elements according to the voltage waveform signal.
As a result, according to the invention, there will never be caused any power loss due to diode effect between the drain and substrate electrodes of the MOS transistor whose drain electrode is connected to the common output terminal. Thus, there may be obtained a voltage selector circuit which may highly effectively be applied to miniature electronic devices or systems using batteries as a working power source, for example.
This invention can be more fully understood from the following detailed description when taken in conjunction with the accompanying drawings, in which: Figure 1 is a circuit diagram of a prior art voltage selector circuit; Figures 2(A) to 2(C) show a time chart of input and output signals as shown in Fig. 1; Figure 3 shows the structure of an n-type MOS transistor; Figure 4 is a circuit diagram of a voltage selector circuit according to an embodiment of this invention; and Figures 5(A) to 5(D) show a time chart of input and output signals and a substrate voitage waveform signal as shown in Fig. 4.
Referring now to the drawings of Figs. 4 and 5(A) to 5(B), an embodiment of this invention will be described in detail.
In Fig. 4, numerals 11 and 1 2 designate ptype MOS transistors, while numerals 13, 14 and 1 5 designate n-type MOS transistors. A signal Ao (32 Hz) is applied to the gates of the MOS transistors 11 and 14, and a signa A, (64 Hz) is applied to the gates of the transistors 1 2 and 1 5 and also supplied to the gate of the transistor 1 3 through an inverter 1 6.
Such construction is just the same as the one shown in Fig. 1. The substrate electrode of the transistor 1 5 is connected with the source of an n-type MOS transistor 1 7 and the drain of an n-type MOS transistor 1 8. The gate and drain of the MOS transistor 1 7 are supplied with the A1 and a voltage V1 respectively.
Further, the gate and source of the transistor 1 8 are supplied with the output signal of the inverter 1 6 and a voltage V2 respectively.
In a voltage selector circuit of the abovementioned construction, the voltage wavelength signal delivered from an output terminal B0 is just the same as the one described in connection with Fig. 1. In the transistor 15, when the voltage levels of the input signals Ao and A, are both low, a voltage V0 (O V) appears at the output terminal B,, and the MOS transistors 1 7 and 1 8 are turned off and on respectively, so that the voltage V2 (- 3 V) is applied to the substrate electrode of the transistor 1 5. When the voltage levels of the input signals Ao and A, are low and high respectively, the voltage V, (- 1.5 V) is delivered from the output terminal B,, and the MOS transistors 1 7 and 1 8 are turned on and off respectively, so that the voltage V, (- 1.5 V) is applied to the substrate electrode of the MOS transistor 1 5. On the other hand, when the voltage levels of the input signals Ao and A1 are high and low respectively, the voltage V2 (- 3 V) is delivered from the output termi- nal B,, and the MOS transistors 1 7 and 18 are turned off and on respectively, so that the voltage V2 (- 3 V) is applied to the substrate electrode of the MOS transistor 1 5. By such switching operations of the MOS transistors 1 7 and 18, the substrate electrode of the MOS transistor 1 5 is supplied with a substrate voltage waveform signal as shown in Fig. 5(D). Waveforms of Figs. 5(A) to 5(C) are identical with the ones shown in Figs. 2(A) to 2(C) respectively.
As may be seen from the substrate voltage waveform of Fig. 5(D), the voltage V2 (- 3 V) lower than the voltage V0 (O V) is applied to the substrate electrode when the output signal B0 is at the voltage VO. Further, the voltage V, (- 1.5 V) or V2 (- 3 V) is applied to the substrate electrode when the output signal B0 is at the voltage V1 or V2, respectively. Thus, the substrate voltage of the MOS transistor 1 5 may be so controlled as to be lower than or equal to the voltage of the output signal B,, so that there will never be caused any power loss due to diode effect between the drain and substrate.
Although the 3-value voltage waveform is obtained with use of the circuit according to the above-mentioned embodiment, the inven- tion is not limited to that case, and may be also applied to case where voltage waveforms including 4-value, 5-value or more levels are obtained. Furthermore, instead of controlling the substrate voltage of an n-type MOS transistor, the substrate voltage of a p-type MOS transistor may be controlled.

Claims (2)

1. Voltage selector circuit in which a voltage waveform signal corresponding to one selected among voltages from a plurality of power sources is taken out from a common output terminal by selectively turning on and off switching elements formed of MOS transistors the circuit being characterized in that corresponding one of the supply voltages is supplied to the substrate electrode of a specified one of the switching elements according to the voltage waveform signal.
2. Voltage selector circuit, substantially as hereinbefore described with reference to the accompanying drawings.
GB7942591A 1979-12-11 1979-12-11 Voltage selector circuit Expired GB2065404B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB7942591A GB2065404B (en) 1979-12-11 1979-12-11 Voltage selector circuit
HK21085A HK21085A (en) 1979-12-11 1985-03-21 Voltage selector circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB7942591A GB2065404B (en) 1979-12-11 1979-12-11 Voltage selector circuit

Publications (2)

Publication Number Publication Date
GB2065404A true GB2065404A (en) 1981-06-24
GB2065404B GB2065404B (en) 1984-05-31

Family

ID=10509755

Family Applications (1)

Application Number Title Priority Date Filing Date
GB7942591A Expired GB2065404B (en) 1979-12-11 1979-12-11 Voltage selector circuit

Country Status (2)

Country Link
GB (1) GB2065404B (en)
HK (1) HK21085A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0112895A1 (en) * 1982-07-06 1984-07-11 Motorola Inc A voltage detecting and translating circuit.
EP0435258A2 (en) * 1989-12-29 1991-07-03 Oki Electric Industry Co., Ltd. Multi-level selecting circuit
WO1995007571A1 (en) * 1993-09-08 1995-03-16 Siemens Aktiengesellschaft A.c. controller
FR2735927A1 (en) * 1995-06-21 1996-12-27 Sgs Thomson Microelectronics SWITCH CIRCUIT FOR SELECTIVELY PROVIDING DIFFERENT SIGNAL VOLTAGES
DE19859516C1 (en) * 1998-12-22 2000-03-02 Siemens Ag Integrated circuit with decoder element

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0112895A1 (en) * 1982-07-06 1984-07-11 Motorola Inc A voltage detecting and translating circuit.
EP0112895A4 (en) * 1982-07-06 1984-09-11 Motorola Inc A voltage detecting and translating circuit.
EP0435258A2 (en) * 1989-12-29 1991-07-03 Oki Electric Industry Co., Ltd. Multi-level selecting circuit
EP0435258A3 (en) * 1989-12-29 1991-12-11 Oki Electric Industry Co., Ltd. Multi-level selecting circuit
WO1995007571A1 (en) * 1993-09-08 1995-03-16 Siemens Aktiengesellschaft A.c. controller
AU685756B2 (en) * 1993-09-08 1998-01-29 Siemens Aktiengesellschaft A.C. controller
US5808327A (en) * 1993-09-08 1998-09-15 Siemens Aktiengesellschaft AC controller
FR2735927A1 (en) * 1995-06-21 1996-12-27 Sgs Thomson Microelectronics SWITCH CIRCUIT FOR SELECTIVELY PROVIDING DIFFERENT SIGNAL VOLTAGES
EP0750397A1 (en) * 1995-06-21 1996-12-27 STMicroelectronics S.A. Switching circuit for selectively providing voltages of opposed signs
US5796297A (en) * 1995-06-21 1998-08-18 Sgs-Thomson Microelectronics S.A. Selector switch circuit enabling the selective supply of voltages with different signs
DE19859516C1 (en) * 1998-12-22 2000-03-02 Siemens Ag Integrated circuit with decoder element
US6255855B1 (en) 1998-12-22 2001-07-03 Infineon Technologies Ag Integrated circuit having a decoder

Also Published As

Publication number Publication date
GB2065404B (en) 1984-05-31
HK21085A (en) 1985-03-29

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Date Code Title Description
PE20 Patent expired after termination of 20 years

Effective date: 19991210