GB2058453B - Static bipolar memory - Google Patents

Static bipolar memory

Info

Publication number
GB2058453B
GB2058453B GB8028935A GB8028935A GB2058453B GB 2058453 B GB2058453 B GB 2058453B GB 8028935 A GB8028935 A GB 8028935A GB 8028935 A GB8028935 A GB 8028935A GB 2058453 B GB2058453 B GB 2058453B
Authority
GB
United Kingdom
Prior art keywords
bipolar memory
static bipolar
static
memory
bipolar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB8028935A
Other languages
English (en)
Other versions
GB2058453A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of GB2058453A publication Critical patent/GB2058453A/en
Application granted granted Critical
Publication of GB2058453B publication Critical patent/GB2058453B/en
Expired legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/411Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
    • G11C11/4116Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access via separately connected emittors of said transistors or via multiple emittors, e.g. T2L, ECL
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B10/00Static random access memory [SRAM] devices
    • H10B10/10SRAM devices comprising bipolar components
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613Combinations of vertical BJTs and one or more of diodes, resistors or capacitors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
GB8028935A 1979-09-11 1980-09-08 Static bipolar memory Expired GB2058453B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NLAANVRAGE7906752,A NL186934C (nl) 1979-09-11 1979-09-11 Statische bipolaire geheugencel.

Publications (2)

Publication Number Publication Date
GB2058453A GB2058453A (en) 1981-04-08
GB2058453B true GB2058453B (en) 1983-07-06

Family

ID=19833819

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8028935A Expired GB2058453B (en) 1979-09-11 1980-09-08 Static bipolar memory

Country Status (10)

Country Link
US (1) US4388636A (enExample)
JP (1) JPS5826182B2 (enExample)
AU (1) AU538551B2 (enExample)
CA (1) CA1143477A (enExample)
DE (1) DE3033731C2 (enExample)
FR (1) FR2465294A1 (enExample)
GB (1) GB2058453B (enExample)
IT (1) IT1132700B (enExample)
NL (1) NL186934C (enExample)
SE (1) SE449937B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL186934C (nl) 1979-09-11 1991-04-02 Philips Nv Statische bipolaire geheugencel.
EP0090665B1 (en) * 1982-03-30 1989-05-31 Fujitsu Limited Semiconductor memory device
JPS59141600U (ja) * 1983-03-14 1984-09-21 日立造船富岡機械株式会社 抄紙機の紙の水分調節装置
US4956688A (en) * 1984-10-29 1990-09-11 Hitachi, Ltd. Radiation resistant bipolar memory
JPS6259977U (enExample) * 1985-10-03 1987-04-14
US5177584A (en) * 1988-04-11 1993-01-05 Hitachi, Ltd. Semiconductor integrated circuit device having bipolar memory, and method of manufacturing the same

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4032902A (en) * 1975-10-30 1977-06-28 Fairchild Camera And Instrument Corporation An improved semiconductor memory cell circuit and structure
FR2413782A1 (fr) * 1977-12-30 1979-07-27 Radiotechnique Compelec Element de circuit integre destine aux memoires bipolaires a isolement lateral par oxyde
JPS6057707B2 (ja) * 1978-01-25 1985-12-16 株式会社日立製作所 記憶回路
US4257059A (en) * 1978-12-20 1981-03-17 Fairchild Camera And Instrument Corp. Inverse transistor coupled memory cell
NL186934C (nl) 1979-09-11 1991-04-02 Philips Nv Statische bipolaire geheugencel.

Also Published As

Publication number Publication date
NL186934B (nl) 1990-11-01
NL186934C (nl) 1991-04-02
GB2058453A (en) 1981-04-08
JPS5647991A (en) 1981-04-30
JPS5826182B2 (ja) 1983-06-01
SE449937B (sv) 1987-05-25
CA1143477A (en) 1983-03-22
DE3033731C2 (de) 1985-05-30
FR2465294B1 (enExample) 1985-02-15
SE8006225L (sv) 1981-03-12
US4388636A (en) 1983-06-14
NL7906752A (nl) 1981-03-13
IT8024530A0 (it) 1980-09-08
AU538551B2 (en) 1984-08-16
AU6211880A (en) 1981-03-19
DE3033731A1 (de) 1981-03-26
FR2465294A1 (fr) 1981-03-20
IT1132700B (it) 1986-07-02

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19940908