GB2056172B - Manufacture of thinned substrate imagers - Google Patents

Manufacture of thinned substrate imagers

Info

Publication number
GB2056172B
GB2056172B GB8023991A GB8023991A GB2056172B GB 2056172 B GB2056172 B GB 2056172B GB 8023991 A GB8023991 A GB 8023991A GB 8023991 A GB8023991 A GB 8023991A GB 2056172 B GB2056172 B GB 2056172B
Authority
GB
United Kingdom
Prior art keywords
imagers
manufacture
thinned substrate
thinned
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB8023991A
Other versions
GB2056172A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US06/098,699 external-priority patent/US4266334A/en
Application filed by RCA Corp filed Critical RCA Corp
Priority to GB8023991A priority Critical patent/GB2056172B/en
Publication of GB2056172A publication Critical patent/GB2056172A/en
Application granted granted Critical
Publication of GB2056172B publication Critical patent/GB2056172B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1464—Back illuminated imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14687—Wafer level processing
GB8023991A 1979-07-25 1980-07-22 Manufacture of thinned substrate imagers Expired GB2056172B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB8023991A GB2056172B (en) 1979-07-25 1980-07-22 Manufacture of thinned substrate imagers

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB7925870 1979-07-25
US06/098,699 US4266334A (en) 1979-07-25 1979-11-29 Manufacture of thinned substrate imagers
GB8023991A GB2056172B (en) 1979-07-25 1980-07-22 Manufacture of thinned substrate imagers

Publications (2)

Publication Number Publication Date
GB2056172A GB2056172A (en) 1981-03-11
GB2056172B true GB2056172B (en) 1983-04-27

Family

ID=27260748

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8023991A Expired GB2056172B (en) 1979-07-25 1980-07-22 Manufacture of thinned substrate imagers

Country Status (1)

Country Link
GB (1) GB2056172B (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2170651A (en) * 1985-01-17 1986-08-06 Rca Corp Method and apparatus for aligning a filter onto a color charge-coupled device imager
FR2629946B1 (en) * 1986-07-02 1990-08-17 Labo Electronique Physique RADIATION SENSOR COMPRISING A CHARGE TRANSFER DEVICE AND IMAGE ENHANCING TUBE AND TELEVISION SHOOTING TUBE PROVIDED WITH SUCH A SENSOR
GB2228366B (en) * 1989-02-21 1993-09-29 Canon Kk Photoelectric converter and image reading apparatus mounting the same
US5162251A (en) * 1991-03-18 1992-11-10 Hughes Danbury Optical Systems, Inc. Method for making thinned charge-coupled devices
US6162702A (en) * 1999-06-17 2000-12-19 Intersil Corporation Self-supported ultra thin silicon wafer process

Also Published As

Publication number Publication date
GB2056172A (en) 1981-03-11

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19980722