GB2050740B - Signal-processing transistor circuitry with intrisic temperature insensitiivty - Google Patents

Signal-processing transistor circuitry with intrisic temperature insensitiivty

Info

Publication number
GB2050740B
GB2050740B GB8016742A GB8016742A GB2050740B GB 2050740 B GB2050740 B GB 2050740B GB 8016742 A GB8016742 A GB 8016742A GB 8016742 A GB8016742 A GB 8016742A GB 2050740 B GB2050740 B GB 2050740B
Authority
GB
United Kingdom
Prior art keywords
insensitiivty
intrisic
signal
temperature
transistor circuitry
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB8016742A
Other languages
English (en)
Other versions
GB2050740A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ANALOGUE DEVICES Inc
Original Assignee
ANALOGUE DEVICES Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ANALOGUE DEVICES Inc filed Critical ANALOGUE DEVICES Inc
Publication of GB2050740A publication Critical patent/GB2050740A/en
Application granted granted Critical
Publication of GB2050740B publication Critical patent/GB2050740B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/4508—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using bipolar transistors as the active amplifying circuit
    • H03F3/45085—Long tailed pairs
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06G—ANALOGUE COMPUTERS
    • G06G7/00—Devices in which the computing operation is performed by varying electric or magnetic quantities
    • G06G7/12—Arrangements for performing computing operations, e.g. operational amplifiers specially adapted therefor
    • G06G7/20—Arrangements for performing computing operations, e.g. operational amplifiers specially adapted therefor for evaluating powers, roots, polynomes, mean square values or standard deviation
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/302—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in bipolar transistor amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/42—Modifications of amplifiers to extend the bandwidth
    • H03F1/48—Modifications of amplifiers to extend the bandwidth of aperiodic amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45141—A cross coupled pair of transistors being added in the input circuit of a differential amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45542—Indexing scheme relating to differential amplifiers the IC comprising bias stabilisation means, e.g. DC level stabilisation, and temperature coefficient dependent control, e.g. by DC level shifting
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45562—Indexing scheme relating to differential amplifiers the IC comprising a cross coupling circuit, e.g. comprising two cross-coupled transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45578—Indexing scheme relating to differential amplifiers the IC comprising one or more diodes as level shifters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45612—Indexing scheme relating to differential amplifiers the IC comprising one or more input source followers as input stages in the IC
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45702—Indexing scheme relating to differential amplifiers the LC comprising two resistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Software Systems (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Amplifiers (AREA)
  • Indication And Recording Devices For Special Purposes And Tariff Metering Devices (AREA)
  • Logic Circuits (AREA)
GB8016742A 1979-05-21 1980-05-21 Signal-processing transistor circuitry with intrisic temperature insensitiivty Expired GB2050740B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/040,594 US4268759A (en) 1979-05-21 1979-05-21 Signal-processing circuitry with intrinsic temperature insensitivity

Publications (2)

Publication Number Publication Date
GB2050740A GB2050740A (en) 1981-01-07
GB2050740B true GB2050740B (en) 1983-08-17

Family

ID=21911834

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8016742A Expired GB2050740B (en) 1979-05-21 1980-05-21 Signal-processing transistor circuitry with intrisic temperature insensitiivty

Country Status (7)

Country Link
US (1) US4268759A (enExample)
JP (1) JPS55161405A (enExample)
CA (1) CA1132206A (enExample)
DE (1) DE3019157A1 (enExample)
FR (1) FR2457522A1 (enExample)
GB (1) GB2050740B (enExample)
NL (1) NL8002904A (enExample)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5526030A (en) * 1978-08-14 1980-02-25 Hitachi Ltd Flat armature coil
US4330744A (en) * 1980-12-16 1982-05-18 Bell Telephone Laboratories, Incorporated Precision converter/isolation circuit
US4366444A (en) * 1981-02-02 1982-12-28 Rca Corporation Temperature-independent current trimming arrangement
US4389619A (en) * 1981-02-02 1983-06-21 Rca Corporation Adjustable-gain current amplifier for temperature-independent trimming
US4468629A (en) * 1982-05-27 1984-08-28 Trw Inc. NPN Operational amplifier
IT1210964B (it) * 1982-12-22 1989-09-29 Ates Componenti Elettron Circuito elettronico per la variazione di ampiezza e lo spostamento di livello di un segnale.
FR2563958B1 (fr) * 1984-05-04 1987-06-05 Radiotechnique Compelec Circuit pour engendrer une tension proportionnelle a la difference de deux tensions
DE3417211A1 (de) * 1984-05-10 1985-11-14 Robert Bosch Gmbh, 7000 Stuttgart Temperatursensor
NL8501882A (nl) 1985-07-01 1987-02-02 Philips Nv Signaalspanning-stroom omzetter.
US5091701A (en) * 1990-10-15 1992-02-25 Analog Devices, Inc. High efficiency cross-coupled folded cascode circuit
US5389840A (en) * 1992-11-10 1995-02-14 Elantec, Inc. Complementary analog multiplier circuits with differential ground referenced outputs and switching capability
US5723915A (en) * 1992-12-04 1998-03-03 Texas Instruments Incorporated Solid state power controller
US5359236A (en) * 1993-05-25 1994-10-25 Harris Corporation Integrated circuit thermal sensor
US5399914A (en) * 1993-10-18 1995-03-21 Allegro Microsystems, Inc. High ratio current source
US5650743A (en) * 1995-12-12 1997-07-22 National Semiconductor Corporation Common mode controlled signal multiplier
US5717360A (en) * 1996-04-16 1998-02-10 National Semiconductor Corporation High speed variable gain amplifier
DE19630046C1 (de) * 1996-07-25 1998-03-12 Siemens Ag Eingangsstufe für einen Transimpedanzverstärker
JP2005516441A (ja) * 2002-01-24 2005-06-02 コーニンクレッカ　フィリップス　エレクトロニクス　エヌ　ヴィ 電流信号を電圧信号に変換する電子回路
US6628220B2 (en) * 2002-01-31 2003-09-30 Raytheon Company Circuit for canceling thermal hysteresis in a current switch
US7180359B2 (en) * 2004-12-22 2007-02-20 Analog Devices, Inc. Logarithmic temperature compensation for detectors
US7262661B2 (en) * 2005-06-27 2007-08-28 Linear Technology Corporation Variable gain amplifier with temperature compensation and gain linearity enhancement
US9099956B2 (en) 2011-04-26 2015-08-04 King Abdulaziz City For Science And Technology Injection locking based power amplifier
JP6101581B2 (ja) * 2013-06-28 2017-03-22 株式会社日立製作所 バイアス回路

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1967007C3 (de) * 1968-01-29 1980-01-31 Tektronix, Inc., Beaverton, Oreg. (V.St.A.) Vierquadranten-Multiplikationsschaltung
NL6908784A (enExample) * 1969-06-10 1970-12-14
US3930172A (en) * 1974-11-06 1975-12-30 Nat Semiconductor Corp Input supply independent circuit

Also Published As

Publication number Publication date
US4268759A (en) 1981-05-19
FR2457522B1 (enExample) 1985-03-22
DE3019157A1 (de) 1980-12-04
NL8002904A (nl) 1980-11-25
JPH0113644B2 (enExample) 1989-03-07
CA1132206A (en) 1982-09-21
FR2457522A1 (fr) 1980-12-19
GB2050740A (en) 1981-01-07
JPS55161405A (en) 1980-12-16

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee