GB202113618D0 - Etched-facet photonic devices with improved anti-refelction coating - Google Patents

Etched-facet photonic devices with improved anti-refelction coating

Info

Publication number
GB202113618D0
GB202113618D0 GBGB2113618.9A GB202113618A GB202113618D0 GB 202113618 D0 GB202113618 D0 GB 202113618D0 GB 202113618 A GB202113618 A GB 202113618A GB 202113618 D0 GB202113618 D0 GB 202113618D0
Authority
GB
United Kingdom
Prior art keywords
refelction
etched
coating
improved anti
photonic devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
GBGB2113618.9A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sivers Photonics Ltd
Original Assignee
Sivers Photonics Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sivers Photonics Ltd filed Critical Sivers Photonics Ltd
Priority to GBGB2113618.9A priority Critical patent/GB202113618D0/en
Publication of GB202113618D0 publication Critical patent/GB202113618D0/en
Priority to GBGB2213937.2A priority patent/GB202213937D0/en
Priority to PCT/GB2022/052419 priority patent/WO2023047130A1/en
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0287—Facet reflectivity
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13—Integrated optical circuits characterised by the manufacturing method
    • G02B6/132—Integrated optical circuits characterised by the manufacturing method by deposition of thin films
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13—Integrated optical circuits characterised by the manufacturing method
    • G02B6/136—Integrated optical circuits characterised by the manufacturing method by etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H01S5/0203—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1082—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region with a special facet structure, e.g. structured, non planar, oblique
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/11—Anti-reflection coatings
    • G02B1/113—Anti-reflection coatings using inorganic layer materials only
    • G02B1/115—Multilayers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/176—Specific passivation layers on surfaces other than the emission facet
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1082—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region with a special facet structure, e.g. structured, non planar, oblique
    • H01S5/1085—Oblique facets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2202—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure by making a groove in the upper laser structure
GBGB2113618.9A 2021-09-23 2021-09-23 Etched-facet photonic devices with improved anti-refelction coating Ceased GB202113618D0 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
GBGB2113618.9A GB202113618D0 (en) 2021-09-23 2021-09-23 Etched-facet photonic devices with improved anti-refelction coating
GBGB2213937.2A GB202213937D0 (en) 2021-09-23 2022-09-23 Etched-facet photonic devices with improved anti-reflection coating
PCT/GB2022/052419 WO2023047130A1 (en) 2021-09-23 2022-09-23 Etched-facet photonic devices with improved anti-reflection coating

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB2113618.9A GB202113618D0 (en) 2021-09-23 2021-09-23 Etched-facet photonic devices with improved anti-refelction coating

Publications (1)

Publication Number Publication Date
GB202113618D0 true GB202113618D0 (en) 2021-11-10

Family

ID=78399723

Family Applications (2)

Application Number Title Priority Date Filing Date
GBGB2113618.9A Ceased GB202113618D0 (en) 2021-09-23 2021-09-23 Etched-facet photonic devices with improved anti-refelction coating
GBGB2213937.2A Ceased GB202213937D0 (en) 2021-09-23 2022-09-23 Etched-facet photonic devices with improved anti-reflection coating

Family Applications After (1)

Application Number Title Priority Date Filing Date
GBGB2213937.2A Ceased GB202213937D0 (en) 2021-09-23 2022-09-23 Etched-facet photonic devices with improved anti-reflection coating

Country Status (2)

Country Link
GB (2) GB202113618D0 (en)
WO (1) WO2023047130A1 (en)

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6289030B1 (en) * 1997-01-31 2001-09-11 Hewlett-Packard Company Fabrication of semiconductor devices
US6835581B2 (en) * 2001-08-17 2004-12-28 The United States Of America As Represented By The National Security Method of coating optical device facets with dielectric layer and device made therefrom
GB0127690D0 (en) 2001-11-19 2002-01-09 Denselight Semiconductors Pte Coating of optical device facets at the wafer-level
JP2009246241A (en) * 2008-03-31 2009-10-22 Furukawa Electric Co Ltd:The Semiconductor optical element, and optical module
US8982921B2 (en) * 2013-02-07 2015-03-17 Avago Technologies General Ip (Singapore) Pte. Ltd. Semiconductor lasers and etched-facet integrated devices having H-shaped windows
US10454239B2 (en) * 2015-08-28 2019-10-22 International Business Machines Corporation Wafer scale monolithic integration of lasers, modulators, and other optical components using ALD optical coatings
CN107978645A (en) * 2017-11-24 2018-05-01 浙江晶科能源有限公司 A kind of preparation method of N-type crystal silicon battery

Also Published As

Publication number Publication date
WO2023047130A1 (en) 2023-03-30
GB202213937D0 (en) 2022-11-09

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Legal Events

Date Code Title Description
AT Applications terminated before publication under section 16(1)