GB201307443D0 - Dieelectric Capacator - Google Patents
Dieelectric CapacatorInfo
- Publication number
- GB201307443D0 GB201307443D0 GBGB1307443.0A GB201307443A GB201307443D0 GB 201307443 D0 GB201307443 D0 GB 201307443D0 GB 201307443 A GB201307443 A GB 201307443A GB 201307443 D0 GB201307443 D0 GB 201307443D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- electrode
- dielectric layer
- dielectric
- coated onto
- structured
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000231 atomic layer deposition Methods 0.000 abstract 3
- 239000011248 coating agent Substances 0.000 abstract 3
- 238000000576 coating method Methods 0.000 abstract 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 abstract 2
- 239000003990 capacitor Substances 0.000 abstract 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 abstract 1
- 229910002113 barium titanate Inorganic materials 0.000 abstract 1
- 239000002041 carbon nanotube Substances 0.000 abstract 1
- 229910021393 carbon nanotube Inorganic materials 0.000 abstract 1
- 229910001084 galinstan Inorganic materials 0.000 abstract 1
- 229910000449 hafnium oxide Inorganic materials 0.000 abstract 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 229910052697 platinum Inorganic materials 0.000 abstract 1
- 239000004408 titanium dioxide Substances 0.000 abstract 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/005—Electrodes
- H01G4/008—Selection of materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/10—Metal-oxide dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
- H01G4/1218—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates
- H01G4/1227—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates based on alkaline earth titanates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
- H01L28/91—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions made by depositing layers, e.g. by depositing alternating conductive and insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
- H01L29/0669—Nanowires or nanotubes
- H01L29/0673—Nanowires or nanotubes oriented parallel to a substrate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mathematical Physics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Semiconductor Memories (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
A method of manufacturing a dielectric capacitor comprising providing a first electrode having a structured surface, a dielectric layer coated onto the first electrode, and a second electrode coated onto the dielectric layer; where the structured surface comprises a random array of tubes, wires or rods which extend from the substrate surface, and where the dielectric layer is deposited by atomic layer deposition. Also disclosed is a dielectric capacitor comprising a structured electrode of randomly arranged carbon nanotubes extending from a substrate surface; a dielectric layer coated onto the structured electrode; and a second electrode coated onto the dielectric layer. The structured surface may have a spacing to length ratio with a maximum of 1:30. The dielectric layer may comprise one or more of hafnium oxide, titanium dioxide, barium titanate. The second electrode may be aluminium, titanium nitride, platinum, ruffinium or galinstan. The dielectric coating may be provided as a two layer coating, the first coating provided by plasma-enhanced atomic layer deposition and a second by thermal atomic layer deposition.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GBGB1207766.5A GB201207766D0 (en) | 2012-05-03 | 2012-05-03 | Dielectric capacitor |
Publications (6)
| Publication Number | Publication Date |
|---|---|
| GB201307443D0 true GB201307443D0 (en) | 2013-06-05 |
| GB2501823A GB2501823A (en) | 2013-11-06 |
| GB2501823B GB2501823B (en) | 2016-04-20 |
| GB2501823C GB2501823C (en) | 2016-08-10 |
| GB2501823A8 GB2501823A8 (en) | 2022-08-03 |
| GB2501823B8 GB2501823B8 (en) | 2022-08-03 |
Family
ID=46330749
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GBGB1207766.5A Ceased GB201207766D0 (en) | 2012-05-03 | 2012-05-03 | Dielectric capacitor |
| GB1307443.0A Active GB2501823B8 (en) | 2012-05-03 | 2013-04-25 | Dielectric Capacitor |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GBGB1207766.5A Ceased GB201207766D0 (en) | 2012-05-03 | 2012-05-03 | Dielectric capacitor |
Country Status (2)
| Country | Link |
|---|---|
| GB (2) | GB201207766D0 (en) |
| WO (1) | WO2013164576A1 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9349789B1 (en) | 2014-12-09 | 2016-05-24 | International Business Machines Corporation | Coaxial carbon nanotube capacitor for eDRAM |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6911373B2 (en) * | 2002-09-20 | 2005-06-28 | Intel Corporation | Ultra-high capacitance device based on nanostructures |
| US20050167655A1 (en) * | 2004-01-29 | 2005-08-04 | International Business Machines Corporation | Vertical nanotube semiconductor device structures and methods of forming the same |
| US7057881B2 (en) * | 2004-03-18 | 2006-06-06 | Nanosys, Inc | Nanofiber surface based capacitors |
| US8424177B2 (en) * | 2006-10-04 | 2013-04-23 | Stmicroelectronics (Crolles 2) Sas | MIM capacitor with enhanced capacitance |
| CN101573772B (en) * | 2006-10-04 | 2011-10-05 | Nxp股份有限公司 | Mim capacitor |
| JP2011522394A (en) * | 2007-12-31 | 2011-07-28 | エータモタ・コーポレイション | End contact type vertical carbon nanotube transistor |
| US8603195B2 (en) * | 2009-08-24 | 2013-12-10 | Applied Materials, Inc. | 3D approach on battery and supercapitor fabrication by initiation chemical vapor deposition techniques |
| US8405189B1 (en) * | 2010-02-08 | 2013-03-26 | Lockheed Martin Corporation | Carbon nanotube (CNT) capacitors and devices integrated with CNT capacitors |
| CA2712051A1 (en) * | 2010-08-12 | 2012-02-12 | The Governors Of The University Of Alberta | Method of fabricating a carbon nanotube array |
-
2012
- 2012-05-03 GB GBGB1207766.5A patent/GB201207766D0/en not_active Ceased
-
2013
- 2013-04-25 WO PCT/GB2013/051048 patent/WO2013164576A1/en active Application Filing
- 2013-04-25 GB GB1307443.0A patent/GB2501823B8/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| GB2501823A8 (en) | 2022-08-03 |
| GB2501823A (en) | 2013-11-06 |
| GB2501823C (en) | 2016-08-10 |
| GB2501823B (en) | 2016-04-20 |
| GB2501823B8 (en) | 2022-08-03 |
| WO2013164576A1 (en) | 2013-11-07 |
| GB201207766D0 (en) | 2012-06-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| GB2501871A8 (en) | Hybrid capacitor | |
| EP2802022A3 (en) | Method of making a resistive random access memory device with metal-doped resistive switching layer | |
| WO2017001406A3 (en) | Carbon-nanotube-based composite coating and production method thereof | |
| GB2501872A8 (en) | Coated structured surfaces | |
| JP2016535441A5 (en) | ||
| RU2016151490A (en) | METHOD FOR PRODUCING THE DEVICE ON THE BASIS OF FLEXIBLE CONDUCTING WAYS, THE DEVICE ON THE BASIS OF FLEXIBLE CONDUCTING WAYS AND THE SYSTEM OF NEUROSTIMULATION | |
| RU2010141746A (en) | ELEMENT COATED WITH SOLID MATERIAL | |
| RU2432634C1 (en) | Multilayer nanocomposite for capacitors and method of its manufacturing | |
| WO2013158641A3 (en) | Capacitive touch device brush stylus | |
| CL2014001716A1 (en) | Anode for the generation of oxygen comprising conductive metal substrate and a catalyst layer containing iridium oxide; and its manufacturing process. | |
| CL2014001717A1 (en) | Anode for the generation of oxygen comprising a conductive metal substrate and a catalyst layer containing iridium oxide formed on the substrate, iridium coating which is calcined between 430 to 480 ° c to form the catalyst layer which is calcined subsequently between 520 to 600 ° c; and manufacturing procedure. | |
| RU2014137156A (en) | WEAR-RESISTANT CUTTING TOOL AND METHOD FOR ITS MANUFACTURE | |
| PH12016501801A1 (en) | Substrate having a stack with thermal properties | |
| EP2434531A3 (en) | Metal-insulator-metal capacitor and method for manufacturing thereof | |
| WO2015156894A3 (en) | Carbon nanotube-coated substrates and methods of making the same | |
| GB201307443D0 (en) | Dieelectric Capacator | |
| WO2018060118A3 (en) | Electrode for a lithium-ion battery and device and method for producing said electrode | |
| EA201370102A1 (en) | METHOD OF COATING GLASS | |
| WO2015090991A3 (en) | Method for producing patterned metallic coatings | |
| WO2014195840A3 (en) | Metal wires of a stacked inductor | |
| WO2014165247A3 (en) | Capacitors comprising pores in an aluminium substrate | |
| EP2645403A3 (en) | Method of manufacturing ferroelectric thin film | |
| MY192442A (en) | Method for forming structures upon a substrate | |
| WO2010141668A3 (en) | Methods of forming strontium titanate films | |
| TW201714318A (en) | Solar cell structure and method for manufacturing the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| S117 | Correction of errors in patents and applications (sect. 117/patents act 1977) |
Free format text: REQUEST FILED; REQUEST FOR CORRECTION UNDER SECTION 117 FILED ON 28 JUNE 2016. |
|
| S117 | Correction of errors in patents and applications (sect. 117/patents act 1977) |
Free format text: CORRECTIONS ALLOWED; REQUEST FOR CORRECTION UNDER SECTION 117 FILED ON 28 JUNE 2016, ALLOWED ON 03 AUGUST 2016. |