GB201210375D0 - Threshold voltage programming of an ion sensitive field effect transistor - Google Patents

Threshold voltage programming of an ion sensitive field effect transistor

Info

Publication number
GB201210375D0
GB201210375D0 GB201210375A GB201210375A GB201210375D0 GB 201210375 D0 GB201210375 D0 GB 201210375D0 GB 201210375 A GB201210375 A GB 201210375A GB 201210375 A GB201210375 A GB 201210375A GB 201210375 D0 GB201210375 D0 GB 201210375D0
Authority
GB
United Kingdom
Prior art keywords
effect transistor
field effect
ion sensitive
sensitive field
threshold voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB201210375A
Other versions
GB2502991B (en
GB2502991A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DNAE Group Holdings Ltd
Original Assignee
DNAE Group Holdings Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by DNAE Group Holdings Ltd filed Critical DNAE Group Holdings Ltd
Priority to GB201210375A priority Critical patent/GB2502991B/en
Publication of GB201210375D0 publication Critical patent/GB201210375D0/en
Priority to PCT/GB2013/051499 priority patent/WO2013186537A1/en
Publication of GB2502991A publication Critical patent/GB2502991A/en
Application granted granted Critical
Publication of GB2502991B publication Critical patent/GB2502991B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4145—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS specially adapted for biomolecules, e.g. gate electrode with immobilised receptors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0441—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing multiple floating gate devices, e.g. separate read-and-write FAMOS transistors with connected floating gates
    • G11C16/045—Floating gate memory cells with both P and N channel memory transistors, usually sharing a common floating gate

Abstract

A device and method for threshold voltage programming of an Ion Sensitive Field Effect Transistor (ISFET) is of particular use in matching ISFETs in an array, which may be used in biological reaction monitoring. A circuit comprises an Ion Sensitive Field Effect Transistor (ISFET) having a floating gate and two tunnelling inputs Vt+ and Vt- coupled by capacitors Ct+ and Ct- to the floating gate for bidirectional electron tunneling to program a charge on the floating gate. The field programmable circuit enables calibration of ISFETs in an array to bring electrical parameters to a desirable point.
GB201210375A 2012-06-12 2012-06-12 Threshold voltage programming of an ion sensitive field effect transistor Active GB2502991B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB201210375A GB2502991B (en) 2012-06-12 2012-06-12 Threshold voltage programming of an ion sensitive field effect transistor
PCT/GB2013/051499 WO2013186537A1 (en) 2012-06-12 2013-06-07 Threshold voltage programming of an ion sensitive field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB201210375A GB2502991B (en) 2012-06-12 2012-06-12 Threshold voltage programming of an ion sensitive field effect transistor

Publications (3)

Publication Number Publication Date
GB201210375D0 true GB201210375D0 (en) 2012-07-25
GB2502991A GB2502991A (en) 2013-12-18
GB2502991B GB2502991B (en) 2014-07-16

Family

ID=46605806

Family Applications (1)

Application Number Title Priority Date Filing Date
GB201210375A Active GB2502991B (en) 2012-06-12 2012-06-12 Threshold voltage programming of an ion sensitive field effect transistor

Country Status (2)

Country Link
GB (1) GB2502991B (en)
WO (1) WO2013186537A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10830731B1 (en) 2019-09-17 2020-11-10 Globalfoundries Singapore Pte. Ltd. Sensor devices and methods of forming the same

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8878257B2 (en) * 2010-06-04 2014-11-04 Freescale Semiconductor, Inc. Methods and apparatus for an ISFET
GB201017023D0 (en) * 2010-10-08 2010-11-24 Dna Electronics Ltd ISFET switch

Also Published As

Publication number Publication date
WO2013186537A1 (en) 2013-12-19
GB2502991B (en) 2014-07-16
GB2502991A (en) 2013-12-18

Similar Documents

Publication Publication Date Title
EP2833410A3 (en) Nonvolatile memory transistor, device including the same and method of operating the transistor
MX2017007193A (en) Contaminant detection device and method.
EP3257066A4 (en) Device and method for analysis of biofluids by ion generation using wetted porous material
WO2014014939A3 (en) Semiconductor electronic components with integrated current limiters
WO2015159183A3 (en) Semiconductor device and display device having the same
CA2823180C (en) Systems and methods for high accuracy analyte measurement
EP2768039A3 (en) Graphene device and electronic apparatus
HK1218778A1 (en) Method device for generating a corrected value of an analyte concentration in a sample of a body fluid
JP2015144266A5 (en) Transistor
EP3032250C0 (en) Substance measurement method and measurement device employing electrochemical biosensor
EP3343688A4 (en) Method for manufacturing battery cell including reference electrode for measurement of relative electrode potential and battery cell manufactured thereby
MX2016002317A (en) Ion modification.
MX361966B (en) Ion mobility spectrometry (ims) device with charged material transportation chamber.
MX2015015288A (en) Design and fabrication of implantable fully integrated electrochemical sensors.
JP2015046872A5 (en) Semiconductor device
JP2012089224A5 (en) Semiconductor memory device inspection method
WO2014190069A8 (en) Enhancement-mode transistors with increased threshold voltage
EP3036819A4 (en) Method and apparatus for adjusting voltage threshold for battery by measuring internal resistance of battery, and corresponding method and sensor circuit for measuring internal resistance of battery
EP3058359A4 (en) Molecular receptor-based chemical field-effect transistor (chemfet) devices, systems, and methods for in-situ nitrate monitoring in field soils
EP3391038B8 (en) Method of operating a mixed ionophore ion-selective electrode for the improved detection of urea in blood
EP2824836A3 (en) Cascode switch device
WO2012006546A3 (en) Circuits, devices and sensors for fluid detection
GB2505599A (en) Magnetic tunnel junction transistor devices
PL2767882T3 (en) Method for time segmentation of an instrumented gesture, related device, terminal and program
WO2012138054A3 (en) Humidity sensor, humidity-sensing method, and transistor for the humidity sensor