GB201117608D0 - Amplifier - Google Patents

Amplifier

Info

Publication number
GB201117608D0
GB201117608D0 GBGB1117608.8A GB201117608A GB201117608D0 GB 201117608 D0 GB201117608 D0 GB 201117608D0 GB 201117608 A GB201117608 A GB 201117608A GB 201117608 D0 GB201117608 D0 GB 201117608D0
Authority
GB
United Kingdom
Prior art keywords
amplifier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GBGB1117608.8A
Other versions
GB2487998B (en
GB2487998A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Electronics Corp
Original Assignee
Renesas Mobile Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB1108444.9A external-priority patent/GB2481487B/en
Priority claimed from US13/111,423 external-priority patent/US8378748B2/en
Application filed by Renesas Mobile Corp filed Critical Renesas Mobile Corp
Publication of GB201117608D0 publication Critical patent/GB201117608D0/en
Publication of GB2487998A publication Critical patent/GB2487998A/en
Application granted granted Critical
Publication of GB2487998B publication Critical patent/GB2487998B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0277—Selecting one or more amplifiers from a plurality of amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
    • H03F1/223—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/301—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in MOSFET amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H03F3/45183—Long tailed pairs
    • H03F3/45188—Non-folded cascode stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45479—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection
    • H03F3/45632—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit
    • H03F3/45636—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit by using feedback means
    • H03F3/45641—Measuring at the loading circuit of the differential amplifier
    • H03F3/45645—Controlling the input circuit of the differential amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/72—Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/135—Indexing scheme relating to amplifiers there being a feedback over one or more internal stages in the global amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/144—Indexing scheme relating to amplifiers the feedback circuit of the amplifier stage comprising a passive resistor and passive capacitor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/156—One or more switches are realised in the feedback circuit of the amplifier stage
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/159—Indexing scheme relating to amplifiers the feedback circuit being closed during a switching time
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/165—A filter circuit coupled to the input of an amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/39—Different band amplifiers are coupled in parallel to broadband the whole amplifying circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45306—Indexing scheme relating to differential amplifiers the common gate stage implemented as dif amp eventually for cascode dif amp
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45318—Indexing scheme relating to differential amplifiers the AAC comprising a cross coupling circuit, e.g. two extra transistors cross coupled
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45386—Indexing scheme relating to differential amplifiers the AAC comprising one or more coils in the source circuit
GB1117608.8A 2011-05-19 2011-10-12 Amplifier Expired - Fee Related GB2487998B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB1108444.9A GB2481487B (en) 2011-05-19 2011-05-19 Amplifier
US13/111,423 US8378748B2 (en) 2011-05-19 2011-05-19 Amplifier

Publications (3)

Publication Number Publication Date
GB201117608D0 true GB201117608D0 (en) 2011-11-23
GB2487998A GB2487998A (en) 2012-08-15
GB2487998B GB2487998B (en) 2013-03-20

Family

ID=45091920

Family Applications (2)

Application Number Title Priority Date Filing Date
GB1117608.8A Expired - Fee Related GB2487998B (en) 2011-05-19 2011-10-12 Amplifier
GB201207237A Withdrawn GB2493045A (en) 2011-05-19 2012-04-25 A receiver amplifier configurable for common-gate or inductively-degenerated operation

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB201207237A Withdrawn GB2493045A (en) 2011-05-19 2012-04-25 A receiver amplifier configurable for common-gate or inductively-degenerated operation

Country Status (5)

Country Link
EP (1) EP2710729A1 (en)
CN (1) CN103563250A (en)
GB (2) GB2487998B (en)
TW (1) TW201301749A (en)
WO (1) WO2012156945A1 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105138957B (en) * 2015-07-24 2017-04-19 深圳市汇顶科技股份有限公司 Fingerprint detection circuit and fingerprint identification system
CN106656078B (en) * 2016-09-23 2021-04-06 西安电子科技大学 Operational amplifier with inductance and dual power supply and analog-digital converter
CN106953604B (en) * 2017-02-23 2021-01-08 维沃移动通信有限公司 Low-noise amplifier and mobile terminal
US10038418B1 (en) 2017-04-04 2018-07-31 Psemi Corporation Optimized multi gain LNA enabling low current and high linearity including highly linear active bypass
US11881828B2 (en) 2017-04-04 2024-01-23 Psemi Corporation Tunable effective inductance for multi-gain LNA with inductive source degeneration
CN108336976B (en) * 2018-02-07 2023-08-01 广州慧智微电子股份有限公司 Multi-band low-noise amplifier and amplifying method
CN111969961B (en) * 2020-10-22 2021-03-02 深圳市南方硅谷半导体有限公司 Amplifier with feedback structure
CN112702022B (en) * 2020-12-28 2021-11-23 北京力通通信有限公司 Low-noise large-bandwidth signal processing device

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5973557A (en) * 1996-10-18 1999-10-26 Matsushita Electric Industrial Co., Ltd. High efficiency linear power amplifier of plural frequency bands and high efficiency power amplifier
US6198352B1 (en) * 1997-11-20 2001-03-06 Applied Micro Circuits Corporation Radio frequency low noise amplifier fabricated in complementary metal oxide semiconductor technology
DE10132800C1 (en) * 2001-07-06 2003-01-30 Infineon Technologies Ag Low noise amplifier circuit
US6549077B1 (en) * 2002-02-20 2003-04-15 United Microelectronics Corp. Integrated inductor for RF transistor
KR100704568B1 (en) * 2002-08-05 2007-04-06 인티그런트 테크놀로지즈(주) Variable Gain Low Noise Amplifier
CN1252912C (en) * 2003-10-17 2006-04-19 清华大学 Low-Volage high-linearity radio-frequency amplifier for on-chip impedance match
US7167044B2 (en) * 2004-05-10 2007-01-23 University Of Florida Research Foundation, Inc. Dual-band CMOS front-end with two gain modes
US7382189B2 (en) * 2006-09-25 2008-06-03 Agere Systems Inc. Multi-gain amplifier with input impedance control
TWI327416B (en) * 2006-10-27 2010-07-11 Nat Univ Tsing Hua Cascode low noise amplifier with a source coupled active inductor
JP4689586B2 (en) * 2006-12-06 2011-05-25 太陽誘電株式会社 Low distortion variable frequency amplifier
US7622989B2 (en) * 2007-04-30 2009-11-24 The Regents Of The University Of California Multi-band, inductor re-use low noise amplifier
US7705682B2 (en) * 2007-09-27 2010-04-27 Nanoamp Mobile, Inc. Inductor sharing in radio frequency communications
CN100542012C (en) * 2007-11-07 2009-09-16 北京航空航天大学 A kind of low noise amplifier and implementation method that is used for radio communication and navigation neceiver
US7936217B2 (en) * 2007-11-29 2011-05-03 Qualcomm, Incorporated High-linearity complementary amplifier
CN101431316A (en) * 2008-07-25 2009-05-13 华东师范大学 Double-frequency band inductor multiplexing radio frequency CMOS low-noise amplifier
US8102213B2 (en) * 2009-07-23 2012-01-24 Qualcomm, Incorporated Multi-mode low noise amplifier with transformer source degeneration
CN101820251A (en) * 2010-05-17 2010-09-01 北京大学 Ultra-low power consumption low-noise amplifier structure and preparation method thereof

Also Published As

Publication number Publication date
GB201207237D0 (en) 2012-06-06
EP2710729A1 (en) 2014-03-26
GB2487998B (en) 2013-03-20
WO2012156945A1 (en) 2012-11-22
TW201301749A (en) 2013-01-01
CN103563250A (en) 2014-02-05
GB2493045A (en) 2013-01-23
GB2487998A (en) 2012-08-15

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Legal Events

Date Code Title Description
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)

Free format text: REGISTERED BETWEEN 20140102 AND 20140108

732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)

Free format text: REGISTERED BETWEEN 20140109 AND 20140115

PCNP Patent ceased through non-payment of renewal fee

Effective date: 20161012