GB201111042D0 - Purified silicon - Google Patents

Purified silicon

Info

Publication number
GB201111042D0
GB201111042D0 GBGB1111042.6A GB201111042A GB201111042D0 GB 201111042 D0 GB201111042 D0 GB 201111042D0 GB 201111042 A GB201111042 A GB 201111042A GB 201111042 D0 GB201111042 D0 GB 201111042D0
Authority
GB
United Kingdom
Prior art keywords
silicon
ribbon
microplate
fibre
silicon dioxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
GBGB1111042.6A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Norwegian University of Science and Technology NTNU
Original Assignee
NTNU Technology Transfer AS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NTNU Technology Transfer AS filed Critical NTNU Technology Transfer AS
Priority to GBGB1111042.6A priority Critical patent/GB201111042D0/en
Publication of GB201111042D0 publication Critical patent/GB201111042D0/en
Priority to PCT/GB2012/051522 priority patent/WO2013001308A2/en
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/037—Purification
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

A process for purifying Si comprising (I) obtaining a silicon fibre, ribbon or silicon microplate in which one dimension thereof is less than 75 microns; (II) oxidising said fibre, ribbon or microplate to provide a silicon dioxide skin thereon; (III) annealing said silicon dioxide coated fibre, ribbon or microplate; (IV) etching the silicon dioxide skin; and optionally repeating steps (II) to (IV) above.
GBGB1111042.6A 2011-06-29 2011-06-29 Purified silicon Ceased GB201111042D0 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GBGB1111042.6A GB201111042D0 (en) 2011-06-29 2011-06-29 Purified silicon
PCT/GB2012/051522 WO2013001308A2 (en) 2011-06-29 2012-06-29 Purified silicon

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB1111042.6A GB201111042D0 (en) 2011-06-29 2011-06-29 Purified silicon

Publications (1)

Publication Number Publication Date
GB201111042D0 true GB201111042D0 (en) 2011-08-10

Family

ID=44485354

Family Applications (1)

Application Number Title Priority Date Filing Date
GBGB1111042.6A Ceased GB201111042D0 (en) 2011-06-29 2011-06-29 Purified silicon

Country Status (2)

Country Link
GB (1) GB201111042D0 (en)
WO (1) WO2013001308A2 (en)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4430150A (en) * 1981-08-07 1984-02-07 Texas Instruments Incorporated Production of single crystal semiconductors
US5069740A (en) 1984-09-04 1991-12-03 Texas Instruments Incorporated Production of semiconductor grade silicon spheres from metallurgical grade silicon particles
JP2009292652A (en) * 2006-11-29 2009-12-17 Kyocera Corp Production method of crystalline silicon grain

Also Published As

Publication number Publication date
WO2013001308A3 (en) 2013-06-06
WO2013001308A2 (en) 2013-01-03

Similar Documents

Publication Publication Date Title
SG165262A1 (en) Substrate etching method and system
WO2011076422A8 (en) Lithium disilicate glass ceramics, method for the production thereof and use thereof
WO2012169804A3 (en) Method for manufacturing a graphene-treated fiber
EP2392549A4 (en) Glass substrate for semiconductor device member, and process for producing glass substrate for semiconductor device member
EA201100569A1 (en) METHOD OF OBTAINING SIOHIGH PURITY FROM SILICATE SOLUTIONS
MX2011009369A (en) Substituted 2-mercaptoquinoline-3-carboxamides as kcnq2/3 modulators.
GB2490606A (en) Spalling for a semiconductor substrate
EA201100567A1 (en) METHOD OF OBTAINING SIOHIGH PURITY FROM SILICATE SOLUTIONS
BR112013030830A2 (en) process of preparing the compound of formula (i) and estetrol obtained directly by the process
WO2014049052A3 (en) Optoelectronic component and method for producing an optoelectronic component
WO2009114719A3 (en) Apparatus and method of retaining and releasing molecules from nanostructures by an external stimulus
MX2011008825A (en) Substituted 3-aminoisoxazolopyridines as kcnq2/3 modulators.
WO2011152287A3 (en) Method of producing glass
TN2013000385A1 (en) Processes for the manufacture of macrocyclic depsipeptides and new intermediates
MY172670A (en) Printable diffusion barriers for silicon wafers
BR112015005416A2 (en) organic acid production by low ph fermentation
MX2011009338A (en) Substituted 3-amino-2-mercaptoquinolines as kcnq2/3 modulators.
MY170615A (en) Novel matting agent for uv varnishes
SG10201407741XA (en) Waveguide Structure
IN2014DN09029A (en)
GB201111042D0 (en) Purified silicon
EP2581352A4 (en) Method for producing glass substrate provided with inorganic-microparticle-containing silicon oxide film
WO2010059916A3 (en) Preparation of docetaxel
BR112014031919A2 (en) process for acetic acid production
WO2012054281A3 (en) Nano-structured surface

Legal Events

Date Code Title Description
COOA Change in applicant's name or ownership of the application

Owner name: NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY (NT

Free format text: FORMER OWNER: NTNU TECHNOLOGY TRANSFER AS

AT Applications terminated before publication under section 16(1)