GB1550784A - Field-effedt transistors - Google Patents

Field-effedt transistors

Info

Publication number
GB1550784A
GB1550784A GB40244/77A GB4024477A GB1550784A GB 1550784 A GB1550784 A GB 1550784A GB 40244/77 A GB40244/77 A GB 40244/77A GB 4024477 A GB4024477 A GB 4024477A GB 1550784 A GB1550784 A GB 1550784A
Authority
GB
United Kingdom
Prior art keywords
effedt
transistors
field
effedt transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB40244/77A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE2643987A external-priority patent/DE2643987C2/de
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of GB1550784A publication Critical patent/GB1550784A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H10D30/684—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection
    • H10D30/685—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection from the channel
GB40244/77A 1976-09-29 1977-09-28 Field-effedt transistors Expired GB1550784A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2643987A DE2643987C2 (de) 1974-09-20 1976-09-29 n-Kanal-Speicher-FET

Publications (1)

Publication Number Publication Date
GB1550784A true GB1550784A (en) 1979-08-22

Family

ID=5989229

Family Applications (1)

Application Number Title Priority Date Filing Date
GB40244/77A Expired GB1550784A (en) 1976-09-29 1977-09-28 Field-effedt transistors

Country Status (4)

Country Link
US (1) US4148044A (enExample)
JP (1) JPS5342686A (enExample)
FR (1) FR2366668A2 (enExample)
GB (1) GB1550784A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2300519A (en) * 1995-05-04 1996-11-06 Hyundai Electronics Ind Transistor structure

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2828855C2 (de) * 1978-06-30 1982-11-18 Siemens AG, 1000 Berlin und 8000 München Wortweise elektrisch umprogrammierbarer, nichtflüchtiger Speicher sowie Verfahren zum Löschen bzw. Einschreiben eines bzw. in einen solchen Speicher(s)
CH631287A5 (fr) * 1979-03-14 1982-07-30 Centre Electron Horloger Element de memoire non-volatile, electriquement reprogrammable.
US4590503A (en) * 1983-07-21 1986-05-20 Honeywell Inc. Electrically erasable programmable read only memory
US4785199A (en) * 1983-11-28 1988-11-15 Stanford University Programmable complementary transistors
US7200046B2 (en) * 2005-06-14 2007-04-03 Micron Technology, Inc. Low power NROM memory devices
FR2984600A1 (fr) * 2011-12-20 2013-06-21 St Microelectronics Rousset Transistor à grille flottante ayant un rendement d'injection des électrons chauds amélioré.

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3881180A (en) * 1971-11-30 1975-04-29 Texas Instruments Inc Non-volatile memory cell
US3919711A (en) * 1973-02-26 1975-11-11 Intel Corp Erasable floating gate device
JPS5516375B2 (enExample) * 1973-05-18 1980-05-01
NL7500550A (nl) * 1975-01-17 1976-07-20 Philips Nv Halfgeleider-geheugeninrichting.
JPS51117838A (en) * 1975-04-10 1976-10-16 Shindengen Electric Mfg Co Ltd Semiconductor memory device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2300519A (en) * 1995-05-04 1996-11-06 Hyundai Electronics Ind Transistor structure
GB2300519B (en) * 1995-05-04 1999-11-03 Hyundai Electronics Ind Transistor structure of semiconductor device

Also Published As

Publication number Publication date
FR2366668A2 (fr) 1978-04-28
JPS5342686A (en) 1978-04-18
US4148044A (en) 1979-04-03
FR2366668B2 (enExample) 1982-02-26

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PE20 Patent expired after termination of 20 years

Effective date: 19950908