GB1501962A - Photosensitive device - Google Patents

Photosensitive device

Info

Publication number
GB1501962A
GB1501962A GB18673/75A GB1867375A GB1501962A GB 1501962 A GB1501962 A GB 1501962A GB 18673/75 A GB18673/75 A GB 18673/75A GB 1867375 A GB1867375 A GB 1867375A GB 1501962 A GB1501962 A GB 1501962A
Authority
GB
United Kingdom
Prior art keywords
base
region
collector
emitter
regions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB18673/75A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB1501962A publication Critical patent/GB1501962A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/197—Bipolar transistor image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/103—Integrated devices the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/088—J-Fet, i.e. junction field effect transistor

Landscapes

  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
GB18673/75A 1974-06-24 1975-05-05 Photosensitive device Expired GB1501962A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/482,178 US3958264A (en) 1974-06-24 1974-06-24 Space-charge-limited phototransistor

Publications (1)

Publication Number Publication Date
GB1501962A true GB1501962A (en) 1978-02-22

Family

ID=23915030

Family Applications (1)

Application Number Title Priority Date Filing Date
GB18673/75A Expired GB1501962A (en) 1974-06-24 1975-05-05 Photosensitive device

Country Status (10)

Country Link
US (1) US3958264A (cg-RX-API-DMAC7.html)
JP (1) JPS5227040B2 (cg-RX-API-DMAC7.html)
CA (1) CA1039839A (cg-RX-API-DMAC7.html)
CH (1) CH583971A5 (cg-RX-API-DMAC7.html)
DE (1) DE2521435C2 (cg-RX-API-DMAC7.html)
FR (1) FR2276697A1 (cg-RX-API-DMAC7.html)
GB (1) GB1501962A (cg-RX-API-DMAC7.html)
IT (1) IT1037605B (cg-RX-API-DMAC7.html)
NL (1) NL7507429A (cg-RX-API-DMAC7.html)
SE (1) SE406390B (cg-RX-API-DMAC7.html)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5478092A (en) * 1977-12-05 1979-06-21 Hitachi Ltd Lateral semiconductor device
US4212023A (en) * 1978-11-30 1980-07-08 General Electric Company Bilateral phototransistor
JPS5772345U (cg-RX-API-DMAC7.html) * 1980-10-22 1982-05-04
JPS6174369A (ja) * 1984-09-20 1986-04-16 Sony Corp 半導体装置
US4618380A (en) * 1985-06-18 1986-10-21 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Method of fabricating an imaging X-ray spectrometer
DE102016114676B4 (de) * 2016-08-08 2023-08-03 Infineon Technologies Ag Vorrichtung zur Transformation einer elektrischen Leistung einer elektromagnetischen Welle in ein elektrisches Gleichspannungssignal

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3366802A (en) * 1965-04-06 1968-01-30 Fairchild Camera Instr Co Field effect transistor photosensitive modulator
US3448344A (en) * 1966-03-15 1969-06-03 Westinghouse Electric Corp Mosaic of semiconductor elements interconnected in an xy matrix
US3551761A (en) * 1968-08-13 1970-12-29 Ibm Integrated photodiode array
US3626825A (en) * 1970-05-28 1971-12-14 Texas Instruments Inc Radiation-sensitive camera shutter and aperture control systems
US3706130A (en) * 1970-07-13 1972-12-19 Motorola Inc Voltage distribution for integrated circuits
US3714526A (en) * 1971-02-19 1973-01-30 Nasa Phototransistor
BE792639A (fr) * 1971-12-17 1973-03-30 Ibm Transistor a charge d'espace limitee
JPS5213918B2 (cg-RX-API-DMAC7.html) * 1972-02-02 1977-04-18
JPS5641186B2 (cg-RX-API-DMAC7.html) * 1972-03-03 1981-09-26
US3764410A (en) * 1972-03-13 1973-10-09 Motorola Inc Method of making ultra fine geometry planar semiconductor devices
US3855609A (en) * 1973-12-26 1974-12-17 Ibm Space charge limited transistor having recessed dielectric isolation

Also Published As

Publication number Publication date
SE406390B (sv) 1979-02-05
IT1037605B (it) 1979-11-20
DE2521435A1 (de) 1976-01-15
US3958264A (en) 1976-05-18
SE7506619L (sv) 1975-12-29
FR2276697B1 (cg-RX-API-DMAC7.html) 1977-04-15
CH583971A5 (cg-RX-API-DMAC7.html) 1977-01-14
JPS5227040B2 (cg-RX-API-DMAC7.html) 1977-07-18
AU8100475A (en) 1976-11-11
JPS516688A (cg-RX-API-DMAC7.html) 1976-01-20
FR2276697A1 (fr) 1976-01-23
DE2521435C2 (de) 1982-08-26
NL7507429A (nl) 1975-12-30
CA1039839A (en) 1978-10-03

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee