GB1497697A - Dielectric composition and electric current regulating junctions - Google Patents

Dielectric composition and electric current regulating junctions

Info

Publication number
GB1497697A
GB1497697A GB50407/75A GB5040775A GB1497697A GB 1497697 A GB1497697 A GB 1497697A GB 50407/75 A GB50407/75 A GB 50407/75A GB 5040775 A GB5040775 A GB 5040775A GB 1497697 A GB1497697 A GB 1497697A
Authority
GB
United Kingdom
Prior art keywords
junctions
electric current
dielectric composition
current regulating
dec
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB50407/75A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EIDP Inc
Original Assignee
EI Du Pont de Nemours and Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EI Du Pont de Nemours and Co filed Critical EI Du Pont de Nemours and Co
Publication of GB1497697A publication Critical patent/GB1497697A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C7/00Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C13/00Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009RRAM elements whose operation depends upon chemical change
    • G11C13/0014RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • G11C13/0016RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material comprising polymers
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C17/00Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B63/00Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011Manufacture or treatment of multistable switching devices
    • H10N70/021Formation of the switching material, e.g. layer deposition
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20Multistable switching devices, e.g. memristors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801Constructional details of multistable switching devices
    • H10N70/821Device geometry
    • H10N70/826Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801Constructional details of multistable switching devices
    • H10N70/881Switching materials

Abstract

1497697 Electrical coupling EI DU PONT DE NEMOURS & CO 9 Dec 1975 [12 Dec 1974 (2)] 50407/75 Addition to 1440830 Heading H2E [Also in Divisions C3 and H1] The disclosure is similar to that in the parent Specification, differing in the following respects. (1) The invention relates to compositions wherein the metal particles constitute at least 10% and less than 40% by volume, the balance being binder. (2) A D.C. current pulse of magnitude related to layer thickness and of one microsecond to one millisecond duration may be used to activate the junction. (3) Polyvinyl alcohol and acetate are included as further examples of binder material. (4) The metal particle size range is 0À01 to 250 microns.
GB50407/75A 1974-12-12 1975-12-09 Dielectric composition and electric current regulating junctions Expired GB1497697A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US53229874A 1974-12-12 1974-12-12
US53229774A 1974-12-12 1974-12-12

Publications (1)

Publication Number Publication Date
GB1497697A true GB1497697A (en) 1978-01-12

Family

ID=27063805

Family Applications (1)

Application Number Title Priority Date Filing Date
GB50407/75A Expired GB1497697A (en) 1974-12-12 1975-12-09 Dielectric composition and electric current regulating junctions

Country Status (1)

Country Link
GB (1) GB1497697A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2193721A (en) * 1986-07-26 1988-02-17 Kurasawa Optical Ind Electrically conductive synthetic material

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2193721A (en) * 1986-07-26 1988-02-17 Kurasawa Optical Ind Electrically conductive synthetic material
GB2193721B (en) * 1986-07-26 1990-05-30 Kurasawa Optical Ind Electrically conductive synthetic material

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee