GB1497697A - Dielectric composition and electric current regulating junctions - Google Patents
Dielectric composition and electric current regulating junctionsInfo
- Publication number
- GB1497697A GB1497697A GB50407/75A GB5040775A GB1497697A GB 1497697 A GB1497697 A GB 1497697A GB 50407/75 A GB50407/75 A GB 50407/75A GB 5040775 A GB5040775 A GB 5040775A GB 1497697 A GB1497697 A GB 1497697A
- Authority
- GB
- United Kingdom
- Prior art keywords
- junctions
- electric current
- dielectric composition
- current regulating
- dec
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0009—RRAM elements whose operation depends upon chemical change
- G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
- G11C13/0016—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material comprising polymers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of the switching material, e.g. layer deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
Abstract
1497697 Electrical coupling EI DU PONT DE NEMOURS & CO 9 Dec 1975 [12 Dec 1974 (2)] 50407/75 Addition to 1440830 Heading H2E [Also in Divisions C3 and H1] The disclosure is similar to that in the parent Specification, differing in the following respects. (1) The invention relates to compositions wherein the metal particles constitute at least 10% and less than 40% by volume, the balance being binder. (2) A D.C. current pulse of magnitude related to layer thickness and of one microsecond to one millisecond duration may be used to activate the junction. (3) Polyvinyl alcohol and acetate are included as further examples of binder material. (4) The metal particle size range is 0À01 to 250 microns.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US53229874A | 1974-12-12 | 1974-12-12 | |
US53229774A | 1974-12-12 | 1974-12-12 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1497697A true GB1497697A (en) | 1978-01-12 |
Family
ID=27063805
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB50407/75A Expired GB1497697A (en) | 1974-12-12 | 1975-12-09 | Dielectric composition and electric current regulating junctions |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB1497697A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2193721A (en) * | 1986-07-26 | 1988-02-17 | Kurasawa Optical Ind | Electrically conductive synthetic material |
-
1975
- 1975-12-09 GB GB50407/75A patent/GB1497697A/en not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2193721A (en) * | 1986-07-26 | 1988-02-17 | Kurasawa Optical Ind | Electrically conductive synthetic material |
GB2193721B (en) * | 1986-07-26 | 1990-05-30 | Kurasawa Optical Ind | Electrically conductive synthetic material |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed [section 19, patents act 1949] | ||
PCNP | Patent ceased through non-payment of renewal fee |