GB1487750A - Memory systems - Google Patents

Memory systems

Info

Publication number
GB1487750A
GB1487750A GB42370/74A GB4237074A GB1487750A GB 1487750 A GB1487750 A GB 1487750A GB 42370/74 A GB42370/74 A GB 42370/74A GB 4237074 A GB4237074 A GB 4237074A GB 1487750 A GB1487750 A GB 1487750A
Authority
GB
United Kingdom
Prior art keywords
loops
memory
loop
gates
subgroup
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB42370/74A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sperry Corp
Original Assignee
Sperry Rand Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sperry Rand Corp filed Critical Sperry Rand Corp
Publication of GB1487750A publication Critical patent/GB1487750A/en
Expired legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C19/00Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/18Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
    • G11C19/182Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
    • G11C19/188Organisation of a multiplicity of shift registers, e.g. regeneration, timing or input-output circuits
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C19/00Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/287Organisation of a multiplicity of shift registers

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Dram (AREA)
  • Shift Register Type Memory (AREA)

Abstract

1487750 Refreshing volatile memories SPERRY RAND CORP 30 Sept 1974 [1 Oct 1973] 42370/74 Heading G4C A volatile memory constructed on an LSI chip 10 and arranged to be continuously refreshed, comprises N recirculating shift register memory loops 0 to N - 1, data being clocked through the memory loops by two-phase clock signals # 1 , # 2 applied thereto at a frequency F D from an external data clock signal source 20 via 2N gates 30-31; ...; 34-35, the memory loops being addressed by signals fed to the gates 30-31; ..., 34-35 on N lines 14-18 from an address decoder 12, N refresh clock signals of sequential phases and each of frequency F R = F D /N also being fed to the gates 30-31; ...; 34 -35 from a refresh clock signal source 24 via N lines 25-57, so that in operation each non- addressed memory loop is refreshed at the frequency F R while concurrently a selected memory loop may be addressed. Data appearing at the outputs of memory loops 0 to N - 1 are recirculated to the corresponding inputs via N refresh circuits 15-19 and N lines 36-38. In use, if memory loop 0 is addressed via line 14, gates 30-31 are thereby enabled so that after 1 clock cylce the data in loop 0 is right-shifted 1 bit. In the next clock cycle, gates 32-33 are enabled by a refresh clock signal on line 26, gates 30-31 remaining enabled via line 14, so that after 2 clock cycles the respective right shifts in loops 0, 1 are 2, 1. The sequence continues until after N clock cycles loop 0 has returned to its original state and loops 1 to N - 1 are each right-shifted 1 bit. Data may be read out during the time loop 0 is addressed by a signal on a line 48 enabling a gate 50, a further gate 44 having been enabled by the address signal on line 14, the read-out data being present on a line 52. For writing, data is placed on line 52 and a write enable signal is supplied to a line WE. In a modification, Fig. 3 (not shown) the N memory loops 0 to N - 1 are divided into S subgroups where N=SÎ2<SP>n</SP>, and a separate refresh clock signal of frequency f R =F D /S is supplied in parallel to all the gates, e.g. (130)-(131); ...; (132)-(133) of a corresponding subgroup, e.g. subgroup 0, so that in operation, if loop 0 of subgroup 0 is addressed, it is refreshed at the frequency F D whereas the other loops of subgroup 0 and all the loops of subgroups 1 to N - 1 are refreshed at the frequency f R . In Fig. 5 (not shown) each subgroup, e.g. 0, has only a single pair of gates, e.g. (200)-(201), the clock signals being fed in parallel to the memory loops of each subgroup, and a particular memory loop within a subgroup being selected by a loop address decoder (214).
GB42370/74A 1973-10-01 1974-09-30 Memory systems Expired GB1487750A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US402503A US3859640A (en) 1973-10-01 1973-10-01 Concurrent data address and refresh control for a volatile lsi memory system

Publications (1)

Publication Number Publication Date
GB1487750A true GB1487750A (en) 1977-10-05

Family

ID=23592177

Family Applications (1)

Application Number Title Priority Date Filing Date
GB42370/74A Expired GB1487750A (en) 1973-10-01 1974-09-30 Memory systems

Country Status (6)

Country Link
US (1) US3859640A (en)
JP (1) JPS5738995B2 (en)
DE (1) DE2445878C2 (en)
FR (1) FR2246936B1 (en)
GB (1) GB1487750A (en)
IT (1) IT1030618B (en)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4322819A (en) * 1974-07-22 1982-03-30 Hyatt Gilbert P Memory system having servo compensation
US4523290A (en) * 1974-07-22 1985-06-11 Hyatt Gilbert P Data processor architecture
US4445189A (en) * 1978-03-23 1984-04-24 Hyatt Gilbert P Analog memory for storing digital information
US5339275A (en) * 1970-12-28 1994-08-16 Hyatt Gilbert P Analog memory system
US5615142A (en) * 1970-12-28 1997-03-25 Hyatt; Gilbert P. Analog memory system storing and communicating frequency domain information
US5619445A (en) * 1970-12-28 1997-04-08 Hyatt; Gilbert P. Analog memory system having a frequency domain transform processor
US5566103A (en) * 1970-12-28 1996-10-15 Hyatt; Gilbert P. Optical system having an analog image memory, an analog refresh circuit, and analog converters
US4019174A (en) * 1971-12-08 1977-04-19 Monarch Marking Systems, Inc. Data collecting and transmitting system
DE2348490C3 (en) * 1973-09-26 1979-07-26 Siemens Ag, 1000 Berlin Und 8000 Muenchen Method for operating a charge shift store
US4030080A (en) * 1974-01-07 1977-06-14 Texas Instruments Incorporated Variable module memory
GB1458682A (en) * 1974-07-10 1976-12-15 Gte International Inc Storage of informationp
US4084154A (en) * 1975-05-01 1978-04-11 Burroughs Corporation Charge coupled device memory system with burst mode
US4024512A (en) * 1975-06-16 1977-05-17 Fairchild Camera And Instrument Corporation Line-addressable random-access memory
US4032904A (en) * 1975-07-09 1977-06-28 International Business Machines Corporation Means for refreshing ac stable storage cells
NL7512834A (en) * 1975-11-03 1977-05-05 Philips Nv MEMORY WITH VOLATILE INFORMATION STORAGE AND RANDOM ACCESSIBILITY.
US4112504A (en) * 1976-10-20 1978-09-05 Burroughs Corporation Fast access charge coupled device memory organizations for a semiconductor chip
US4238842A (en) * 1978-12-26 1980-12-09 Ibm Corporation LARAM Memory with reordered selection sequence for refresh
US4313159A (en) * 1979-02-21 1982-01-26 Massachusetts Institute Of Technology Data storage and access apparatus
US5128563A (en) * 1990-11-28 1992-07-07 Micron Technology, Inc. CMOS bootstrapped output driver method and circuit
JP3018498B2 (en) * 1990-11-30 2000-03-13 日本電気株式会社 Semiconductor storage device
US5208779A (en) * 1991-04-15 1993-05-04 Micron Technology, Inc. Circuit for providing synchronous refresh cycles in self-refreshing interruptable DRAMs
US5229969A (en) * 1991-04-15 1993-07-20 Micron Technology, Inc. Method for synchronizing refresh cycles in self-refreshing DRAMs having timing circuit shutdown
US5229970A (en) * 1991-04-15 1993-07-20 Micron Technology, Inc. Circuit for synchronizing refresh cycles in self-refreshing drams having timing circuit shutdown
WO1993021575A1 (en) * 1992-04-13 1993-10-28 Seiko Epson Corporation A high density buffer memory architecture and method
AU4798793A (en) 1992-08-10 1994-03-03 Monolithic System Technology, Inc. Fault-tolerant, high-speed bus system and bus interface for wafer-scale integration
US7434761B2 (en) * 2003-05-19 2008-10-14 Commscope Properties, Llc Cable deployment and storage system and associated methods

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1248681A (en) * 1969-01-08 1971-10-06 Int Computers Ltd Improvements in or relating to digital electrical information processing apparatus
US3691534A (en) * 1970-11-04 1972-09-12 Gen Instrument Corp Read only memory system having increased data rate with alternate data readout

Also Published As

Publication number Publication date
JPS5738995B2 (en) 1982-08-18
JPS50111943A (en) 1975-09-03
DE2445878C2 (en) 1983-01-05
DE2445878A1 (en) 1975-04-10
US3859640A (en) 1975-01-07
IT1030618B (en) 1979-04-10
FR2246936A1 (en) 1975-05-02
FR2246936B1 (en) 1981-05-29

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee