GB1483068A - Circuit comprised of insulated gate field effect transistors - Google Patents

Circuit comprised of insulated gate field effect transistors

Info

Publication number
GB1483068A
GB1483068A GB33525/74A GB3352574A GB1483068A GB 1483068 A GB1483068 A GB 1483068A GB 33525/74 A GB33525/74 A GB 33525/74A GB 3352574 A GB3352574 A GB 3352574A GB 1483068 A GB1483068 A GB 1483068A
Authority
GB
United Kingdom
Prior art keywords
inverter
output
input
clock signals
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB33525/74A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP48085614A external-priority patent/JPS5034434A/ja
Priority claimed from JP48092263A external-priority patent/JPS5041460A/ja
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Publication of GB1483068A publication Critical patent/GB1483068A/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/18—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
    • G11C19/182—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
    • G11C19/184—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21D—NUCLEAR POWER PLANT
    • G21D3/00—Control of nuclear power plant
    • G21D3/04—Safety arrangements
    • G21D3/06—Safety arrangements responsive to faults within the plant
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/096—Synchronous circuits, i.e. using clock signals
    • H03K19/0963—Synchronous circuits, i.e. using clock signals using transistors of complementary type
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K23/00—Pulse counters comprising counting chains; Frequency dividers comprising counting chains
    • H03K23/40—Gating or clocking signals applied to all stages, i.e. synchronous counters
    • H03K23/42—Out-of-phase gating or clocking signals applied to counter stages
    • H03K23/44—Out-of-phase gating or clocking signals applied to counter stages using field-effect transistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E30/00—Energy generation of nuclear origin

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • Mathematical Physics (AREA)
  • Business, Economics & Management (AREA)
  • Emergency Management (AREA)
  • Plasma & Fusion (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Logic Circuits (AREA)
  • Shift Register Type Memory (AREA)
GB33525/74A 1973-07-30 1974-07-30 Circuit comprised of insulated gate field effect transistors Expired GB1483068A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP48085614A JPS5034434A (xx) 1973-07-30 1973-07-30
JP48092263A JPS5041460A (xx) 1973-08-17 1973-08-17

Publications (1)

Publication Number Publication Date
GB1483068A true GB1483068A (en) 1977-08-17

Family

ID=26426624

Family Applications (1)

Application Number Title Priority Date Filing Date
GB33525/74A Expired GB1483068A (en) 1973-07-30 1974-07-30 Circuit comprised of insulated gate field effect transistors

Country Status (4)

Country Link
CA (1) CA1008516A (xx)
CH (1) CH590592A5 (xx)
FR (2) FR2252628B1 (xx)
GB (1) GB1483068A (xx)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2174856A (en) * 1985-05-08 1986-11-12 Racal Microelect System Hysteresis latch arrangement
GB2314473A (en) * 1996-06-17 1997-12-24 Nec Corp High-speed dynamic CMOS latch, flip-flop, and frequency divider circuits
US7750708B2 (en) 2004-12-02 2010-07-06 Austriamicrosystems Ag Circuit arrangement for generating a complex signal and the use of this circuit arrangement in a high-frequency transmitter or receiver

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5925314B2 (ja) * 1976-03-10 1984-06-16 シチズン時計株式会社 シフトレジスタ−
JPS52146162A (en) * 1976-05-29 1977-12-05 Toshiba Corp Programmable counter
JPS62226499A (ja) * 1986-03-27 1987-10-05 Toshiba Corp 遅延回路
ATE109600T1 (de) * 1989-04-11 1994-08-15 Siemens Ag Schaltungsanordnung für einen synchronzähler.
US5514491A (en) * 1993-12-02 1996-05-07 Eveready Battery Company, Inc. Nonaqueous cell having a lithium iodide-ether electrolyte
WO2012050761A2 (en) 2010-09-30 2012-04-19 Dow Corning Corporation Process for preparing an acryloyloxysilane

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2174856A (en) * 1985-05-08 1986-11-12 Racal Microelect System Hysteresis latch arrangement
GB2314473A (en) * 1996-06-17 1997-12-24 Nec Corp High-speed dynamic CMOS latch, flip-flop, and frequency divider circuits
US5900758A (en) * 1996-06-17 1999-05-04 Nec Corporation Dynamic circuit for high-speed operation
GB2314473B (en) * 1996-06-17 2001-01-10 Nec Corp Dynamic circuit for high-speed operation
US7750708B2 (en) 2004-12-02 2010-07-06 Austriamicrosystems Ag Circuit arrangement for generating a complex signal and the use of this circuit arrangement in a high-frequency transmitter or receiver

Also Published As

Publication number Publication date
FR2267666A1 (xx) 1975-11-07
FR2267666B1 (xx) 1978-04-21
FR2252628B1 (xx) 1980-05-09
CH590592A5 (xx) 1977-08-15
CA1008516A (en) 1977-04-12
FR2252628A1 (xx) 1975-06-20

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Legal Events

Date Code Title Description
PS Patent sealed
746 Register noted 'licences of right' (sect. 46/1977)
PE20 Patent expired after termination of 20 years

Effective date: 19940729