GB1474942A - Semiconductor light-emitting diode device and method for producing same - Google Patents
Semiconductor light-emitting diode device and method for producing sameInfo
- Publication number
- GB1474942A GB1474942A GB1936374A GB1936374A GB1474942A GB 1474942 A GB1474942 A GB 1474942A GB 1936374 A GB1936374 A GB 1936374A GB 1936374 A GB1936374 A GB 1936374A GB 1474942 A GB1474942 A GB 1474942A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- layers
- compensated
- type
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 4
- 229910052725 zinc Inorganic materials 0.000 abstract 4
- 238000001816 cooling Methods 0.000 abstract 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 abstract 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 2
- 229910052782 aluminium Inorganic materials 0.000 abstract 2
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- 239000000956 alloy Substances 0.000 abstract 1
- 229910052785 arsenic Inorganic materials 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 238000005401 electroluminescence Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 238000004943 liquid phase epitaxy Methods 0.000 abstract 1
- 239000000155 melt Substances 0.000 abstract 1
- 229910052759 nickel Inorganic materials 0.000 abstract 1
- 229910052709 silver Inorganic materials 0.000 abstract 1
- 229910052718 tin Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02395—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02576—N-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02579—P-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02581—Transition metal or rare earth elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02625—Liquid deposition using melted materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Led Devices (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SU1922832A SU511794A1 (ru) | 1973-05-28 | 1973-05-28 | Способ получени полупроводниковой светоизлучающей структуры |
| SU7301924913A SU470244A1 (ru) | 1973-05-31 | 1973-05-31 | Полупроводникова светоизлучающа структура |
| SU1930156 | 1973-06-12 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1474942A true GB1474942A (en) | 1977-05-25 |
Family
ID=27356255
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1936374A Expired GB1474942A (en) | 1973-05-28 | 1974-05-02 | Semiconductor light-emitting diode device and method for producing same |
Country Status (8)
| Country | Link |
|---|---|
| CA (1) | CA1017436A (enrdf_load_stackoverflow) |
| CH (1) | CH571770A5 (enrdf_load_stackoverflow) |
| CS (1) | CS172632B1 (enrdf_load_stackoverflow) |
| DD (1) | DD110582A1 (enrdf_load_stackoverflow) |
| DE (1) | DE2420741C2 (enrdf_load_stackoverflow) |
| FR (1) | FR2232169B1 (enrdf_load_stackoverflow) |
| GB (1) | GB1474942A (enrdf_load_stackoverflow) |
| IT (1) | IT1043910B (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2475803A1 (fr) * | 1980-02-07 | 1981-08-14 | Zaidan Hojin Handotai Kenkyu | Diode emetrice de lumiere a hetero-jonction |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1585732A (enrdf_load_stackoverflow) * | 1967-10-02 | 1970-01-30 | ||
| US3537029A (en) * | 1968-06-10 | 1970-10-27 | Rca Corp | Semiconductor laser producing light at two wavelengths simultaneously |
-
1974
- 1974-04-24 DD DD178100A patent/DD110582A1/xx unknown
- 1974-04-25 CH CH568174A patent/CH571770A5/xx not_active IP Right Cessation
- 1974-04-29 DE DE2420741A patent/DE2420741C2/de not_active Expired
- 1974-04-29 FR FR7414864A patent/FR2232169B1/fr not_active Expired
- 1974-05-02 GB GB1936374A patent/GB1474942A/en not_active Expired
- 1974-05-09 CA CA199,585A patent/CA1017436A/en not_active Expired
- 1974-05-10 IT IT41393/74A patent/IT1043910B/it active
- 1974-05-17 CS CS3531A patent/CS172632B1/cs unknown
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2475803A1 (fr) * | 1980-02-07 | 1981-08-14 | Zaidan Hojin Handotai Kenkyu | Diode emetrice de lumiere a hetero-jonction |
| DE3104082A1 (de) * | 1980-02-07 | 1982-01-07 | Stanley Electric Co. Ldt., Tokyo | "lichtemittierende hetero-junction-diode" |
| US4414558A (en) | 1980-02-07 | 1983-11-08 | Zaidan Hojin Handotai Kenkyu Shinkokai | Hetero-junction light-emitting diode |
Also Published As
| Publication number | Publication date |
|---|---|
| CS172632B1 (enrdf_load_stackoverflow) | 1977-01-28 |
| DE2420741C2 (de) | 1982-10-28 |
| CH571770A5 (enrdf_load_stackoverflow) | 1976-01-15 |
| DE2420741A1 (de) | 1975-01-02 |
| FR2232169A1 (enrdf_load_stackoverflow) | 1974-12-27 |
| DD110582A1 (enrdf_load_stackoverflow) | 1974-12-20 |
| IT1043910B (it) | 1980-02-29 |
| CA1017436A (en) | 1977-09-13 |
| FR2232169B1 (enrdf_load_stackoverflow) | 1977-03-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |