FR2232169A1 - - Google Patents

Info

Publication number
FR2232169A1
FR2232169A1 FR7414864A FR7414864A FR2232169A1 FR 2232169 A1 FR2232169 A1 FR 2232169A1 FR 7414864 A FR7414864 A FR 7414864A FR 7414864 A FR7414864 A FR 7414864A FR 2232169 A1 FR2232169 A1 FR 2232169A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7414864A
Other languages
French (fr)
Other versions
FR2232169B1 (enrdf_load_stackoverflow
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHARMAKADZE REVAZ
Original Assignee
CHARMAKADZE REVAZ
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from SU1922832A external-priority patent/SU511794A1/ru
Priority claimed from SU7301924913A external-priority patent/SU470244A1/ru
Application filed by CHARMAKADZE REVAZ filed Critical CHARMAKADZE REVAZ
Publication of FR2232169A1 publication Critical patent/FR2232169A1/fr
Application granted granted Critical
Publication of FR2232169B1 publication Critical patent/FR2232169B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02581—Transition metal or rare earth elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02625—Liquid deposition using melted materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Led Devices (AREA)
FR7414864A 1973-05-28 1974-04-29 Expired FR2232169B1 (enrdf_load_stackoverflow)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
SU1922832A SU511794A1 (ru) 1973-05-28 1973-05-28 Способ получени полупроводниковой светоизлучающей структуры
SU7301924913A SU470244A1 (ru) 1973-05-31 1973-05-31 Полупроводникова светоизлучающа структура
SU1930156 1973-06-12

Publications (2)

Publication Number Publication Date
FR2232169A1 true FR2232169A1 (enrdf_load_stackoverflow) 1974-12-27
FR2232169B1 FR2232169B1 (enrdf_load_stackoverflow) 1977-03-04

Family

ID=27356255

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7414864A Expired FR2232169B1 (enrdf_load_stackoverflow) 1973-05-28 1974-04-29

Country Status (8)

Country Link
CA (1) CA1017436A (enrdf_load_stackoverflow)
CH (1) CH571770A5 (enrdf_load_stackoverflow)
CS (1) CS172632B1 (enrdf_load_stackoverflow)
DD (1) DD110582A1 (enrdf_load_stackoverflow)
DE (1) DE2420741C2 (enrdf_load_stackoverflow)
FR (1) FR2232169B1 (enrdf_load_stackoverflow)
GB (1) GB1474942A (enrdf_load_stackoverflow)
IT (1) IT1043910B (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2475803A1 (fr) * 1980-02-07 1981-08-14 Zaidan Hojin Handotai Kenkyu Diode emetrice de lumiere a hetero-jonction

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3537029A (en) * 1968-06-10 1970-10-27 Rca Corp Semiconductor laser producing light at two wavelengths simultaneously

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1585732A (enrdf_load_stackoverflow) * 1967-10-02 1970-01-30

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3537029A (en) * 1968-06-10 1970-10-27 Rca Corp Semiconductor laser producing light at two wavelengths simultaneously

Non-Patent Citations (6)

* Cited by examiner, † Cited by third party
Title
EM554.(ITTING DIODE". J.M. BOBURKA ET AL. PAGE) *
NE(GATIVE RESISTANCE LIGHT) *
TR(ESHOLD A) *
UE16, NO. 2 JUILLET 1973: GAA1AS(AMERICAINE: "IBM TECHNICAL DISCLOSURE BULLETIN", VOL.) *
UE6 NO. 6, JUIN 1970 : "LOW(AMERICAINE: "TEEE JOURNAL OF QUANTUM ELECTRONICS", VOL. QE-) *
X 1-XAS VISIBLE AND TR-LIGHT EMITTING DIODE LASERS". H. KRESSEL ET AL. PAGES 278-284.(GA) *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2475803A1 (fr) * 1980-02-07 1981-08-14 Zaidan Hojin Handotai Kenkyu Diode emetrice de lumiere a hetero-jonction

Also Published As

Publication number Publication date
CS172632B1 (enrdf_load_stackoverflow) 1977-01-28
CA1017436A (en) 1977-09-13
IT1043910B (it) 1980-02-29
FR2232169B1 (enrdf_load_stackoverflow) 1977-03-04
GB1474942A (en) 1977-05-25
CH571770A5 (enrdf_load_stackoverflow) 1976-01-15
DE2420741C2 (de) 1982-10-28
DE2420741A1 (de) 1975-01-02
DD110582A1 (enrdf_load_stackoverflow) 1974-12-20

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Legal Events

Date Code Title Description
ST Notification of lapse