GB1470212A - Manufacture of transistor structures - Google Patents

Manufacture of transistor structures

Info

Publication number
GB1470212A
GB1470212A GB3641476A GB3641476A GB1470212A GB 1470212 A GB1470212 A GB 1470212A GB 3641476 A GB3641476 A GB 3641476A GB 3641476 A GB3641476 A GB 3641476A GB 1470212 A GB1470212 A GB 1470212A
Authority
GB
United Kingdom
Prior art keywords
type
epitaxial layer
exposed
base
area
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3641476A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fairchild Semiconductor Corp
Original Assignee
Fairchild Camera and Instrument Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fairchild Camera and Instrument Corp filed Critical Fairchild Camera and Instrument Corp
Publication of GB1470212A publication Critical patent/GB1470212A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/60—Lateral BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/63—Combinations of vertical and lateral BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/012—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/012—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS]
    • H10W10/0121—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS] in regions recessed from the surface, e.g. in trenches or grooves
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/13—Isolation regions comprising dielectric materials formed using local oxidation of silicon [LOCOS], e.g. sealed interface localised oxidation [SILO] or side-wall mask isolation [SWAMI]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/096—Lateral transistor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/117—Oxidation, selective

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Element Separation (AREA)
GB3641476A 1973-05-07 1974-04-01 Manufacture of transistor structures Expired GB1470212A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US357968A US3873989A (en) 1973-05-07 1973-05-07 Double-diffused, lateral transistor structure

Publications (1)

Publication Number Publication Date
GB1470212A true GB1470212A (en) 1977-04-14

Family

ID=23407766

Family Applications (2)

Application Number Title Priority Date Filing Date
GB1432674A Expired GB1470211A (en) 1973-05-07 1974-04-01 Semiconductor devices
GB3641476A Expired GB1470212A (en) 1973-05-07 1974-04-01 Manufacture of transistor structures

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GB1432674A Expired GB1470211A (en) 1973-05-07 1974-04-01 Semiconductor devices

Country Status (8)

Country Link
US (1) US3873989A (enExample)
JP (1) JPS5516457B2 (enExample)
CA (1) CA994923A (enExample)
DE (1) DE2420239A1 (enExample)
FR (1) FR2229140B1 (enExample)
GB (2) GB1470211A (enExample)
HK (2) HK47280A (enExample)
NL (1) NL7406111A (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL180466C (nl) * 1974-03-15 1987-02-16 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting met een halfgeleiderlichaam voorzien van een in het halfgeleiderlichaam verzonken patroon van isolerend materiaal.
US3993513A (en) * 1974-10-29 1976-11-23 Fairchild Camera And Instrument Corporation Combined method for fabricating oxide-isolated vertical bipolar transistors and complementary oxide-isolated lateral bipolar transistors and the resulting structures
US3962717A (en) * 1974-10-29 1976-06-08 Fairchild Camera And Instrument Corporation Oxide isolated integrated injection logic with selective guard ring
US3982266A (en) * 1974-12-09 1976-09-21 Texas Instruments Incorporated Integrated injection logic having high inverse current gain
US4058419A (en) * 1974-12-27 1977-11-15 Tokyo Shibaura Electric, Co., Ltd. Method of manufacturing integrated injection logic semiconductor devices utilizing self-aligned double-diffusion techniques
NL7507733A (nl) * 1975-06-30 1977-01-03 Philips Nv Halfgeleiderinrichting.
JPS5216187A (en) * 1975-07-30 1977-02-07 Hitachi Ltd Semiconductor integrated circuit device and its producing method
JPS5367383A (en) * 1976-08-08 1978-06-15 Fairchild Camera Instr Co Method of producing small ic implantation logic semiconductor
US4180827A (en) * 1977-08-31 1979-12-25 International Business Machines Corporation NPN/PNP Fabrication process with improved alignment
US4283236A (en) * 1979-09-19 1981-08-11 Harris Corporation Method of fabricating lateral PNP transistors utilizing selective diffusion and counter doping
JPS56115565A (en) * 1980-02-19 1981-09-10 Fujitsu Ltd Semiconductor device
JPS56131954A (en) * 1980-03-19 1981-10-15 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device
US4804634A (en) * 1981-04-24 1989-02-14 National Semiconductor Corporation Integrated circuit lateral transistor structure
US4435225A (en) 1981-05-11 1984-03-06 Fairchild Camera & Instrument Corporation Method of forming self-aligned lateral bipolar transistor
GB2143082B (en) * 1983-07-06 1987-06-17 Standard Telephones Cables Ltd Bipolar lateral transistor
US4510676A (en) * 1983-12-06 1985-04-16 International Business Machines, Corporation Method of fabricating a lateral PNP transistor
DE3618166A1 (de) * 1986-05-30 1987-12-03 Telefunken Electronic Gmbh Lateraltransistor
US6828650B2 (en) * 2002-05-31 2004-12-07 Motorola, Inc. Bipolar junction transistor structure with improved current gain characteristics
USD866249S1 (en) 2016-03-22 2019-11-12 Zume, Inc. Food container cover
USD992963S1 (en) 2019-08-15 2023-07-25 Zume, Inc. Lid for a food container
WO2022072555A1 (en) 2020-09-29 2022-04-07 Zume, Inc. Porous molds for molded fiber part manufacturing and method for additive manufacturing of same

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3713008A (en) * 1962-11-26 1973-01-23 Siemens Ag Semiconductor devices having at least four regions of alternately different conductance type
US3473979A (en) * 1963-01-29 1969-10-21 Motorola Inc Semiconductor device
US3328214A (en) * 1963-04-22 1967-06-27 Siliconix Inc Process for manufacturing horizontal transistor structure
US3411051A (en) * 1964-12-29 1968-11-12 Texas Instruments Inc Transistor with an isolated region having a p-n junction extending from the isolation wall to a surface
US3575646A (en) * 1966-09-23 1971-04-20 Westinghouse Electric Corp Integrated circuit structures including controlled rectifiers
US3703420A (en) * 1970-03-03 1972-11-21 Ibm Lateral transistor structure and process for forming the same
US3648125A (en) * 1971-02-02 1972-03-07 Fairchild Camera Instr Co Method of fabricating integrated circuits with oxidized isolation and the resulting structure

Also Published As

Publication number Publication date
HK47280A (en) 1980-09-05
US3873989A (en) 1975-03-25
FR2229140B1 (enExample) 1978-08-11
DE2420239A1 (de) 1974-11-28
CA994923A (en) 1976-08-10
FR2229140A1 (enExample) 1974-12-06
AU6805874A (en) 1975-10-23
HK47180A (en) 1980-09-05
GB1470211A (en) 1977-04-14
JPS5017584A (enExample) 1975-02-24
JPS5516457B2 (enExample) 1980-05-02
NL7406111A (enExample) 1974-11-11

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee