GB1463886A - Processes for fabricating monolithic optoelectronic semicon ductor devices - Google Patents
Processes for fabricating monolithic optoelectronic semicon ductor devicesInfo
- Publication number
- GB1463886A GB1463886A GB2279874A GB2279874A GB1463886A GB 1463886 A GB1463886 A GB 1463886A GB 2279874 A GB2279874 A GB 2279874A GB 2279874 A GB2279874 A GB 2279874A GB 1463886 A GB1463886 A GB 1463886A
- Authority
- GB
- United Kingdom
- Prior art keywords
- emitter
- region
- detector
- wafer
- implanted
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005693 optoelectronics Effects 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title abstract 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 abstract 3
- 239000002019 doping agent Substances 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 229910052725 zinc Inorganic materials 0.000 abstract 3
- 239000011701 zinc Substances 0.000 abstract 3
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 abstract 2
- 239000005864 Sulphur Substances 0.000 abstract 2
- 238000000137 annealing Methods 0.000 abstract 2
- 230000000873 masking effect Effects 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- 239000000956 alloy Substances 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052793 cadmium Inorganic materials 0.000 abstract 1
- 230000000295 complement effect Effects 0.000 abstract 1
- 230000008878 coupling Effects 0.000 abstract 1
- 238000010168 coupling process Methods 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
- 238000005401 electroluminescence Methods 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- FZQYVWUONRVDQB-UHFFFAOYSA-N gold titanium tungsten Chemical compound [Ti][W][Au] FZQYVWUONRVDQB-UHFFFAOYSA-N 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000012986 modification Methods 0.000 abstract 1
- 230000004048 modification Effects 0.000 abstract 1
- 230000005855 radiation Effects 0.000 abstract 1
- 229910052718 tin Inorganic materials 0.000 abstract 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract 1
- 229910052721 tungsten Inorganic materials 0.000 abstract 1
- 239000010937 tungsten Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
- H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
- H10F55/25—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices
- H10F55/255—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices formed in, or on, a common substrate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Light Receiving Elements (AREA)
- Optical Integrated Circuits (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US37522773A | 1973-06-29 | 1973-06-29 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1463886A true GB1463886A (en) | 1977-02-09 |
Family
ID=23480038
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB2279874A Expired GB1463886A (en) | 1973-06-29 | 1974-05-22 | Processes for fabricating monolithic optoelectronic semicon ductor devices |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPS5233474B2 (enrdf_load_stackoverflow) |
DE (1) | DE2425328C3 (enrdf_load_stackoverflow) |
FR (1) | FR2235489B1 (enrdf_load_stackoverflow) |
GB (1) | GB1463886A (enrdf_load_stackoverflow) |
NL (1) | NL7408810A (enrdf_load_stackoverflow) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014185951A1 (en) * | 2013-05-14 | 2014-11-20 | Silicon Lightwave Services | Ultra-responsive phase shifters for depletion mode silicon modulators |
CN115298802A (zh) * | 2020-03-24 | 2022-11-04 | 住友重机械工业株式会社 | 进程监视器及进程监视方法 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5249786A (en) * | 1975-10-17 | 1977-04-21 | Matsushita Electric Ind Co Ltd | Semiconductor light coupling device |
DE19635215A1 (de) * | 1996-08-30 | 1998-03-12 | Forschungszentrum Juelich Gmbh | Optokoppler und Verfahren zu seiner Herstellung |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3705309A (en) * | 1971-02-05 | 1972-12-05 | Westinghouse Electric Corp | Thin film optoelectronic semiconductor device using light coupling |
-
1974
- 1974-05-22 GB GB2279874A patent/GB1463886A/en not_active Expired
- 1974-05-24 DE DE2425328A patent/DE2425328C3/de not_active Expired
- 1974-06-07 FR FR7419761A patent/FR2235489B1/fr not_active Expired
- 1974-06-28 NL NL7408810A patent/NL7408810A/xx not_active Application Discontinuation
- 1974-06-28 JP JP7344974A patent/JPS5233474B2/ja not_active Expired
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014185951A1 (en) * | 2013-05-14 | 2014-11-20 | Silicon Lightwave Services | Ultra-responsive phase shifters for depletion mode silicon modulators |
US9158138B2 (en) | 2013-05-14 | 2015-10-13 | Coriant Advanced Technology, LLC | Ultra-responsive phase shifters for depletion mode silicon modulators |
US9638942B2 (en) | 2013-05-14 | 2017-05-02 | Elenion Technologies, Llc | Ultra-responsive phase shifters for depletion mode silicon modulators |
US9910302B2 (en) | 2013-05-14 | 2018-03-06 | Elenion Technologies, Llc | Ultra-responsive phase shifters for depletion mode silcon modulators |
CN115298802A (zh) * | 2020-03-24 | 2022-11-04 | 住友重机械工业株式会社 | 进程监视器及进程监视方法 |
Also Published As
Publication number | Publication date |
---|---|
NL7408810A (enrdf_load_stackoverflow) | 1974-12-31 |
JPS5039086A (enrdf_load_stackoverflow) | 1975-04-10 |
DE2425328C3 (de) | 1979-11-29 |
DE2425328B2 (de) | 1979-04-12 |
DE2425328A1 (de) | 1975-01-16 |
JPS5233474B2 (enrdf_load_stackoverflow) | 1977-08-29 |
FR2235489A1 (enrdf_load_stackoverflow) | 1975-01-24 |
FR2235489B1 (enrdf_load_stackoverflow) | 1978-02-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB972512A (en) | Methods of making semiconductor devices | |
GB1291450A (en) | Method of making barrier layer devices and devices so made | |
GB867413A (en) | Semiconductor devices | |
GB1426956A (en) | Electroluminescent device | |
US4326211A (en) | N+PP-PP-P+ Avalanche photodiode | |
GB1398006A (en) | Semiconductor electroluminescent devices and to methods of making them | |
SE316221B (enrdf_load_stackoverflow) | ||
US4231050A (en) | Reduction of surface recombination current in GaAs devices | |
GB995773A (en) | Semi-conductor devices | |
KR890009007A (ko) | 집적 적외선 검출기의 제조방법 | |
GB1463886A (en) | Processes for fabricating monolithic optoelectronic semicon ductor devices | |
GB1234294A (enrdf_load_stackoverflow) | ||
GB949646A (en) | Improvements in or relating to semiconductor devices | |
GB1145121A (en) | Improvements in and relating to transistors | |
US4297783A (en) | Method of fabricating GaAs devices utilizing a semi-insulating layer of AlGaAs in combination with an overlying masking layer | |
ES373627A1 (es) | Un dispositivo semiconductor. | |
GB1215539A (en) | Hybrid junction semiconductor device and method of making the same | |
US4045252A (en) | Method of manufacturing a semiconductor structure for microwave operation, including a very thin insulating or weakly doped layer | |
GB1357650A (en) | Methods of manufacturing semiconductor devices | |
GB1057817A (en) | Semiconductor diodes and methods of making them | |
GB1228819A (enrdf_load_stackoverflow) | ||
US2813817A (en) | Semiconductor devices and their manufacture | |
JPS6451658A (en) | Semiconductor device | |
GB1153893A (en) | High Frequency Transistor | |
GB1529853A (en) | Transferred electron devices |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed [section 19, patents act 1949] | ||
PCNP | Patent ceased through non-payment of renewal fee |