GB1461655A - Integrated circuit - Google Patents

Integrated circuit

Info

Publication number
GB1461655A
GB1461655A GB2334674A GB2334674A GB1461655A GB 1461655 A GB1461655 A GB 1461655A GB 2334674 A GB2334674 A GB 2334674A GB 2334674 A GB2334674 A GB 2334674A GB 1461655 A GB1461655 A GB 1461655A
Authority
GB
United Kingdom
Prior art keywords
island
integrated circuit
epitaxial layer
resistor
epitaxial
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2334674A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Original Assignee
Philips Electronic and Associated Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronic and Associated Industries Ltd filed Critical Philips Electronic and Associated Industries Ltd
Publication of GB1461655A publication Critical patent/GB1461655A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
    • H01L27/0647—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
    • H01L27/0652—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0658—Vertical bipolar transistor in combination with resistors or capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/8605—Resistors with PN junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

1461655 Integrated circuit resistors PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd 24 May 1974 [30 May 1973] 23346/74 Heading H1K An integrated circuit resistor formed by a part 4b of an island defined in an epitaxial layer 2 by the substrate 3 and isolation walls 6, both of which are of opposite conductivity type to the epitaxial layer 2, is at least partly bounded at the surface by a boundary zone 10 of the same conductivity type as, and continuous with, the isolation walls 6 but extending in depth only part of the way through the epitaxial layer 2. It is stated that this facilitates more accurate control of the resistance value of the epitaxial island part 4b. The boundary zone 10 is preferably, as shown, divided into two portions 10a, 10b, one on each side of an elongate part 4b of the epitaxial island. The zone 10 may be diffused or implanted. Other circuit elements such as transistors, capacitors or diodes may share the same island as the resistor, the base region, in the case of a transistor, being formed simultaneously with the boundary zone 10. In one embodiment a transistor is located half-way along an elongate resistor region, its collector effectively forming a centre tap of a voltage divider.
GB2334674A 1973-05-30 1974-05-24 Integrated circuit Expired GB1461655A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7307527A NL7307527A (en) 1973-05-30 1973-05-30

Publications (1)

Publication Number Publication Date
GB1461655A true GB1461655A (en) 1977-01-19

Family

ID=19818973

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2334674A Expired GB1461655A (en) 1973-05-30 1974-05-24 Integrated circuit

Country Status (6)

Country Link
JP (2) JPS5023184A (en)
CA (1) CA1003575A (en)
DE (1) DE2425652A1 (en)
FR (1) FR2232091B1 (en)
GB (1) GB1461655A (en)
NL (1) NL7307527A (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4057894A (en) * 1976-02-09 1977-11-15 Rca Corporation Controllably valued resistor
DE2853116A1 (en) * 1978-12-08 1980-06-26 Bosch Gmbh Robert Monolithic resistor for protection in semiconductor device - has resistance formed by epitaxial layer enclosed in insulating diffusion ring
FR2449333A1 (en) * 1979-02-14 1980-09-12 Radiotechnique Compelec IMPROVEMENT ON DARLINGTON SEMICONDUCTOR DEVICES
JPH0412074Y2 (en) * 1986-12-24 1992-03-25

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1050805A (en) * 1964-06-23 1900-01-01

Also Published As

Publication number Publication date
FR2232091A1 (en) 1974-12-27
DE2425652A1 (en) 1974-12-19
CA1003575A (en) 1977-01-11
JPS5633156Y2 (en) 1981-08-06
JPS53119868U (en) 1978-09-22
JPS5023184A (en) 1975-03-12
FR2232091B1 (en) 1977-10-07
NL7307527A (en) 1974-12-03

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee