GB1460090A - Semiconductor photoelectric generator - Google Patents

Semiconductor photoelectric generator

Info

Publication number
GB1460090A
GB1460090A GB4932574A GB4932574A GB1460090A GB 1460090 A GB1460090 A GB 1460090A GB 4932574 A GB4932574 A GB 4932574A GB 4932574 A GB4932574 A GB 4932574A GB 1460090 A GB1460090 A GB 1460090A
Authority
GB
United Kingdom
Prior art keywords
photo
cells
junctions
rectifying
isotype
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4932574A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Bordina N M
Original Assignee
Bordina N M
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bordina N M filed Critical Bordina N M
Priority to GB4932574A priority Critical patent/GB1460090A/en
Publication of GB1460090A publication Critical patent/GB1460090A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/047—PV cell arrays including PV cells having multiple vertical junctions or multiple V-groove junctions formed in a semiconductor substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Sustainable Development (AREA)
  • Photovoltaic Devices (AREA)

Abstract

1460090 Photo-cells N M BORDINA V V ZADDE A K ZAITSEVA A P LANDSMAN D S STREBKOV V I STRELTSOVA and V A UNISHKOV 14 Nov 1974 49325/74 Heading H1K A semi-conductor photo-electric generator comprises interconnected photo-cells 1, Fig. 1, with rectifying barriers 6 and isotype (PP + or NN +) junctions 2 adjacent alight-receiving surface 3, wherein the rectifying barrier 6 is located at a distance within the diffusion length of minority carriers from the surface 3. Leads 4, 8 are formed on opposite faces of the photo-cells 1, the lead 8 being solid or having a mesh structure to allow light absorption from both sides. The rectifying barrier 6 may be a PN junction or a Schottky barrier. Various embodiments are described in which the photo-cells have a prismatic shape and the rectifying and/or isotype junctions 6, 2 are formed adjacent a plurality of surfaces of the prism. In one embodiment, Fig. 9, the shape is a parallelepiped and the lead 8 forms a reflecting surface to increase the light gathering power of the photo-cell. A method of forming the generator comprises soldering together a stack of silicon plates with the junctions 6, 2 formed therein, cutting the stack into matrices, forming additional PN and isotype junctions as required, soldering the matrices into stacks, cutting the stacks into monolithic cellular structures, etching the corners of the photo-cells to separate the various junctions, filling the etched corners with insulation, and metallizing the structure.
GB4932574A 1974-11-14 1974-11-14 Semiconductor photoelectric generator Expired GB1460090A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB4932574A GB1460090A (en) 1974-11-14 1974-11-14 Semiconductor photoelectric generator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB4932574A GB1460090A (en) 1974-11-14 1974-11-14 Semiconductor photoelectric generator

Publications (1)

Publication Number Publication Date
GB1460090A true GB1460090A (en) 1976-12-31

Family

ID=10451968

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4932574A Expired GB1460090A (en) 1974-11-14 1974-11-14 Semiconductor photoelectric generator

Country Status (1)

Country Link
GB (1) GB1460090A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5286925A (en) * 1991-04-18 1994-02-15 Solvay (Societe Annonyme) Electrical conductor, process for manufacturing an electrical conductor and electrode for an electrolysis cell

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5286925A (en) * 1991-04-18 1994-02-15 Solvay (Societe Annonyme) Electrical conductor, process for manufacturing an electrical conductor and electrode for an electrolysis cell

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee