GB1457275A - Growth of crystalline material - Google Patents
Growth of crystalline materialInfo
- Publication number
- GB1457275A GB1457275A GB3505873A GB3505873A GB1457275A GB 1457275 A GB1457275 A GB 1457275A GB 3505873 A GB3505873 A GB 3505873A GB 3505873 A GB3505873 A GB 3505873A GB 1457275 A GB1457275 A GB 1457275A
- Authority
- GB
- United Kingdom
- Prior art keywords
- crystal
- inertia
- armature
- moment
- rod
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
- C30B15/24—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using mechanical means, e.g. shaping guides
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
1457275 Measuring moment of inertia of rotors DEFENCE SECRETARY OF STATE FOR 22 July 1974 [23 July 1973] 35058/73 Heading G1N [Also in Divisions B1 and G3] A system for controlling the cross-sectional area of a crystal when being grown from a melt comprises a crystal puller fitted with means for measuring the effective inertial mass of the crystal when being pulled. As shown, in Fig. 1 a crucible 5 is heated by an induction heater grid 11 to produce a melt 7. A pull rod 1 suspended from and rotated by a torque motor 3 carries a crystal seed 9a in which the crystal is grown from the melt, the rod 1 and torque motor 3 being raised by motor 13. A current source 19 provides simultaneously D.C. and A.C. components of power to motor 3. The D.C. component is used to rotate the armature 6 and the crystal at a steady rate, whilst the A.C. component is used to provide superimposed on the steady rotation an oscillatory motion of the armature 6. It is stated that in these circumstances the moment of inertia of the armature is represented by the capacitance of the armature winding and this is measured in a bridge 21 (Fig. 2). The fixed moment of inertia of the armature 6, rod 1 and seed 9a is subtracted at 31 to produce an output signal representative only of the moment of inertia of the crystal 9. A signal representative of the position of the rod 1 at any given time is produced by indicator 25 and fed along with the signal from the inertia gauge 21 to a comparator 23 which produces an output control signal to modulate the power supplied to the heater coil 11.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB3505873A GB1457275A (en) | 1973-07-23 | 1973-07-23 | Growth of crystalline material |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB3505873A GB1457275A (en) | 1973-07-23 | 1973-07-23 | Growth of crystalline material |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1457275A true GB1457275A (en) | 1976-12-01 |
Family
ID=10373291
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB3505873A Expired GB1457275A (en) | 1973-07-23 | 1973-07-23 | Growth of crystalline material |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB1457275A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3640868A1 (en) * | 1986-11-29 | 1988-06-09 | Leybold Ag | Apparatus for determining the diameter of a crystal on pulling from a melt |
EP0293757A2 (en) * | 1987-05-30 | 1988-12-07 | Forschungszentrum Jülich Gmbh | Process and apparatus to determine a parameter for the transition region between crystal and melt |
DE19806949A1 (en) * | 1998-02-19 | 1999-08-26 | Leybold Systems Gmbh | Crystal growth process control e.g. in the growth of germanium or silicon single crystals by the Czochralski method |
US6341173B2 (en) | 1997-09-03 | 2002-01-22 | Leybold Systems Gmbh | Device and method for the determination of diameters of crystals |
-
1973
- 1973-07-23 GB GB3505873A patent/GB1457275A/en not_active Expired
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3640868A1 (en) * | 1986-11-29 | 1988-06-09 | Leybold Ag | Apparatus for determining the diameter of a crystal on pulling from a melt |
EP0293757A2 (en) * | 1987-05-30 | 1988-12-07 | Forschungszentrum Jülich Gmbh | Process and apparatus to determine a parameter for the transition region between crystal and melt |
EP0293757A3 (en) * | 1987-05-30 | 1990-07-11 | Kernforschungsanlage Juelich | Process and apparatus to determine a parameter for the transition region between crystal and melt |
US6341173B2 (en) | 1997-09-03 | 2002-01-22 | Leybold Systems Gmbh | Device and method for the determination of diameters of crystals |
DE19806949A1 (en) * | 1998-02-19 | 1999-08-26 | Leybold Systems Gmbh | Crystal growth process control e.g. in the growth of germanium or silicon single crystals by the Czochralski method |
US6126745A (en) * | 1998-02-19 | 2000-10-03 | Leybold Systems Gmbh | Device for controlling crystal growth processes |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed | ||
732 | Registration of transactions, instruments or events in the register (sect. 32/1977) | ||
732 | Registration of transactions, instruments or events in the register (sect. 32/1977) | ||
PE20 | Patent expired after termination of 20 years |
Effective date: 19940721 |