GB1443970A - Charge transfer device matched filter - Google Patents

Charge transfer device matched filter

Info

Publication number
GB1443970A
GB1443970A GB5289675A GB5289675A GB1443970A GB 1443970 A GB1443970 A GB 1443970A GB 5289675 A GB5289675 A GB 5289675A GB 5289675 A GB5289675 A GB 5289675A GB 1443970 A GB1443970 A GB 1443970A
Authority
GB
United Kingdom
Prior art keywords
clock
semi
charge
conductor switch
connect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5289675A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US320382A external-priority patent/US3877056A/en
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of GB1443970A publication Critical patent/GB1443970A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H15/00—Transversal filters
    • H03H15/02—Transversal filters using analogue shift registers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/18—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
    • G11C19/182—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
    • G11C19/184—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET
    • G11C19/186—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET using only one transistor per capacitor, e.g. bucket brigade shift register
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • G11C19/285—Peripheral circuits, e.g. for writing into the first stage; for reading-out of the last stage
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/287—Organisation of a multiplicity of shift registers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/04—Shift registers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H01L27/1057—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components comprising charge coupled devices [CCD] or charge injection devices [CID]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42396—Gate electrodes for field effect devices for charge coupled devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76816—Output structures
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H15/00—Transversal filters
    • H03H2015/026—Matched filters in charge domain

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Filters That Use Time-Delay Elements (AREA)
  • Networks Using Active Elements (AREA)

Abstract

1443970 Active filters TEXAS INSTRUMENTS Inc 16 Oct 1973 [2 Jan 1973] 52896/75 Divided out of 1443969 Heading H3U In a charge transfer device matched filter having multiphase clock electrodes, and in which coefficient weighting is effected by dividing the electrodes of one phase into first and second area portions which are connected to two respective clock lines # 3B , # 3B <SP>1</SP>, the output is detected by separately summing the clock currents required to charge the two portions, and then combining these summed values in differential amplifier. Each summing circuit comprises: a storage capacitor C# the value of which is substantially greater than the total capacitance of the electrode portions of respective clockline; a first semi-conductor switch T 1 or T 5 operable by a pulse applied during a first clock period # 1 to connect the storage capacitor to a reference potential V GG ; a second semi-conductor switch T 3 or T 7 responsive to variations in charge level of the respective capacitor to generate an output 68 or 66; a third semi-conductor switch T 2 or T 6 operated by a pulse during a second clock period # 3A to connect the capacitor to its respective clock line # 3B or # 3B <SP>1</SP>; and a fourth semi-conductor switch T 4 or T 8 operated by a pulse during the first clock period # 1 to connect the respective clock line # 3B or # 3B <SP>1</SP> to earth to discharge the electrode portions so that during the second clock period the storage capacitor discharges by an amount proportional to the charge on the storage capacitors, resulting in a corresponding change in signal output. The differential amplifier has its inputs connected to the two outputs 66, 68.
GB5289675A 1973-01-02 1973-10-16 Charge transfer device matched filter Expired GB1443970A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US320382A US3877056A (en) 1973-01-02 1973-01-02 Charge transfer device signal processing system
GB4813773A GB1443969A (en) 1973-01-02 1973-10-16 Charge transfer device signal processing system
US05/534,262 US3953745A (en) 1973-01-02 1974-12-19 Charge transfer device signal processing system

Publications (1)

Publication Number Publication Date
GB1443970A true GB1443970A (en) 1976-07-28

Family

ID=27260032

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5289675A Expired GB1443970A (en) 1973-01-02 1973-10-16 Charge transfer device matched filter

Country Status (1)

Country Link
GB (1) GB1443970A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2414835A1 (en) * 1977-06-30 1979-08-10 Texas Instruments Inc FILTERS WITH CHARGE TRANSFER DEVICES AND MODEMS IN WHICH SUCH FILTERS ARE INCORPORATED

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2414835A1 (en) * 1977-06-30 1979-08-10 Texas Instruments Inc FILTERS WITH CHARGE TRANSFER DEVICES AND MODEMS IN WHICH SUCH FILTERS ARE INCORPORATED

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee