GB1432989A - Field effect transistors - Google Patents
Field effect transistorsInfo
- Publication number
- GB1432989A GB1432989A GB4043973A GB4043973A GB1432989A GB 1432989 A GB1432989 A GB 1432989A GB 4043973 A GB4043973 A GB 4043973A GB 4043973 A GB4043973 A GB 4043973A GB 1432989 A GB1432989 A GB 1432989A
- Authority
- GB
- United Kingdom
- Prior art keywords
- resistive layer
- drain
- igfet
- aug
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005669 field effect Effects 0.000 title 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/435—Resistive materials for field effect devices, e.g. resistive gate for MOSFET or MESFET
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8595072A JPS4941081A (US20090163788A1-20090625-C00002.png) | 1972-08-28 | 1972-08-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1432989A true GB1432989A (en) | 1976-04-22 |
Family
ID=13873026
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB4043973A Expired GB1432989A (en) | 1972-08-28 | 1973-08-28 | Field effect transistors |
Country Status (5)
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IL50821A (en) * | 1975-12-03 | 1978-10-31 | Hughes Aircraft Co | Resistive gate mos switch |
| DE10350702B4 (de) * | 2003-10-30 | 2007-08-09 | Infineon Technologies Ag | Halbleiterbauelement mit einer kapazitiven, gegenüber Fehlern einer Dielektrikusschicht robusten Struktur |
-
1972
- 1972-08-28 JP JP8595072A patent/JPS4941081A/ja active Pending
-
1973
- 1973-08-27 DE DE19732343206 patent/DE2343206A1/de active Granted
- 1973-08-28 NL NL7311854A patent/NL7311854A/xx not_active Application Discontinuation
- 1973-08-28 AT AT746773A patent/AT349530B/de not_active IP Right Cessation
- 1973-08-28 GB GB4043973A patent/GB1432989A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| AT349530B (de) | 1979-04-10 |
| DE2343206A1 (de) | 1974-03-14 |
| JPS4941081A (US20090163788A1-20090625-C00002.png) | 1974-04-17 |
| DE2343206C2 (US20090163788A1-20090625-C00002.png) | 1987-05-21 |
| ATA746773A (de) | 1978-09-15 |
| NL7311854A (US20090163788A1-20090625-C00002.png) | 1974-03-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PE20 | Patent expired after termination of 20 years |
Effective date: 19930827 |