GB1408837A - Memory - Google Patents
MemoryInfo
- Publication number
- GB1408837A GB1408837A GB2371873A GB2371873A GB1408837A GB 1408837 A GB1408837 A GB 1408837A GB 2371873 A GB2371873 A GB 2371873A GB 2371873 A GB2371873 A GB 2371873A GB 1408837 A GB1408837 A GB 1408837A
- Authority
- GB
- United Kingdom
- Prior art keywords
- pbr
- compound
- formula
- memory
- treating successively
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 150000001875 compounds Chemical class 0.000 abstract 2
- 150000004714 phosphonium salts Chemical class 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0009—RRAM elements whose operation depends upon chemical change
- G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
- G11C13/048—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam using other optical storage elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nitrogen And Oxygen Or Sulfur-Condensed Heterocyclic Ring Systems (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US25863972A | 1972-06-01 | 1972-06-01 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1408837A true GB1408837A (en) | 1975-10-08 |
Family
ID=22981472
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB2371873A Expired GB1408837A (en) | 1972-06-01 | 1973-05-18 | Memory |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS4951835A (enExample) |
| CA (1) | CA1019445A (enExample) |
| DE (1) | DE2314193A1 (enExample) |
| FR (1) | FR2186701B1 (enExample) |
| GB (1) | GB1408837A (enExample) |
| IT (1) | IT987135B (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4663270A (en) * | 1984-04-25 | 1987-05-05 | The Johns Hopkins University | Multistate optical switching and memory using an amphoteric organic charge transfer material |
| TW531846B (en) * | 2000-08-09 | 2003-05-11 | Infineon Technologies Ag | Memory element and method for fabricating a memory element |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3495034A (en) * | 1967-03-30 | 1970-02-10 | Ncr Co | Photochromic display system using laser |
-
1973
- 1973-03-22 DE DE19732314193 patent/DE2314193A1/de active Pending
- 1973-04-19 FR FR7315249A patent/FR2186701B1/fr not_active Expired
- 1973-04-26 JP JP4685173A patent/JPS4951835A/ja active Pending
- 1973-05-04 IT IT2371773A patent/IT987135B/it active
- 1973-05-04 CA CA170,773A patent/CA1019445A/en not_active Expired
- 1973-05-18 GB GB2371873A patent/GB1408837A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR2186701A1 (enExample) | 1974-01-11 |
| IT987135B (it) | 1975-02-20 |
| JPS4951835A (enExample) | 1974-05-20 |
| FR2186701B1 (enExample) | 1976-05-28 |
| DE2314193A1 (de) | 1973-12-20 |
| CA1019445A (en) | 1977-10-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PCNP | Patent ceased through non-payment of renewal fee |